(111) Silicon Wafers

PAM XIAMEN offers (111) Silicon Wafers.
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Diam
(mm)
Material
Dopant
Orient. Thck
(μm)
Surf. Resistivity
Ωcm
Comment
6″ n-type Si:P [111] ±0.5° 300 ±15 P/P FZ >6,000 SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
7″ n-type Si:P [111] ±0.5° 300 ±15 P/P FZ >6,000 SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
8″ Intrinsic Si:- [111] ±0.5° 750 E/E FZ >10,000 SEMI notch, TEST (defects, cannot be polished out), Empak cst
9″ p-type Si:B [111–4.0°] ±0.5° 625 P/E 4–15 {7.1–8.8} SEMI Prime, 1 JEIDA Flat(47.5mm), Empak cst
10″ n-type Si:P [111] ±0.5° 675 P/E 1–100 SEMI Prime, NO Flats, Empak cst
11″ Intrinsic Si:- [111] ±0.5° 675 C/C FZ >10,000 SEMI notch, Empak cst
12″ n-type Si:P [111] ±0.1° 200 ±15 BROKEN FZ >3,000 Broken L/L wafers, in 2 pieces
13″ n-type Si:P [111] 300 ±15 P/E FZ 1,000–3,000 SEMI Prime, in hard cassettes of 8 wafers
14″ n-type Si:Sb [111–3.0°] ±0.5° 625 P/E 0.015–0.020 {0.0152–0.0185} SEMI Prime, 2Flats, Empak cst
15″ p-type Si:B [111] ±0.5° 400 ±15 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Lifetime>1,000μs
16″ p-type Si:B [111] ±0.5° 397 P/E FZ 10,000–15,000 SEMI Prime, Backside ACID Etched, Empak cst
17″ n-type Si:P [111] ±0.25° 675 P/E FZ 10,000–20,000 SEMI TEST (Light scratches), 1Flat, Lifetime>1,000μs, Empak cst,
18″ n-type Si:P [111] ±0.5° 500 P/E FZ 10,000–15,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
19″ n-type Si:P [111] ±0.5° 675 P/E FZ >7,000 SEMI, 1Flat, in Empak, Lifetime>1,600μs
20″ n-type Si:P [111] ±0.5° 675 P/E FZ >7,000 SEMI TEST (Scratches, in Unsealed Empak cassette), 1Flat, Lifetime>1,600μs
21″ n-type Si:P [111] ±0.5° 675 P/E FZ >7,000 SEMI, 1Flat, Lifetime>1,600μs, in Empak cassettes of 6 and 8 wafers
22″ n-type Si:P [111] ±0.5° 630 P/G FZ >7,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Back–side Fine Ground
23″ n-type Si:P [111] ±0.25° 675 P/E FZ 7,000–10,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Light scratches
24″ n-type Si:P [111] ±0.5° 150 ±10 BROKEN FZ 5,000–10,000 Broken P/E wafers, in Empak
25″ n-type Si:P [111] ±0.25° 675 P/E FZ 5,000–7,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs
26″ n-type Si:P [111] ±0.25° 675 P/E FZ 5,000–7,000 SEMI TEST (light scratches), 1Flat, Lifetime>1,000μs, in Empak
27″ n-type Si:P [111] ±0.5° 525 P/E FZ >5,000 SEMI Prime, 1Flat, Lifetime>1,000μs, Empak cst
28″ n-type Si:P [111–1° towards[110]] ±0.5° 525 P/E FZ >5,000 SEMI TEST (scratches on back–side), 1Flat, Empak cst
29″ n-type Si:P [111] ±0.25° 525 P/E FZ 3,000–5,000 SEMI TEST (light scratches), 1Flat, Empak cst
30″ n-type Si:P [111] ±0.25° 525 P/E FZ 3,000–5,000 SEMI Prime, 1Flat, in Empak cassettes of 3, 3 & 4 wafers
31″ n-type Si:P [111] ±0.5° 525 P/P FZ >3,000 SEMI Prime, 2Flats, Lifetime>1,000μs, Empak cst
32″ n-type Si:P [111] ±0.5° 525 P/P FZ >3,000 SEMI Prime, 2Flats, Lifetime>1,000μs, in Empak cassettes of 5, & 10 wafers
33″ n-type Si:P [111] ±0.5° 525 P/P FZ >3,000 SEMI Prime, 1Flat (32.5mm)
34″ n-type Si:P [111] ±0.5° 285 ±10 P/P FZ 2,500–2,700 SEMI Prime, 2Flats, Empak cst
35″ n-type Si:P [111] ±0.5° 290 ±10 P/P FZ 2,500–3,500 SEMI TEST (Surface defects), 2Flats, Empak cst
36″ n-type Si:P [111] ±1° 380 P/E FZ 2,000–3,000 SEMI Prime, 1Flat, TTV<5μm, Lifetime>1,000μs, in Epak cassettes of 6 wafers
37″ n-type Si:P [111] ±0.5° 525 P/E FZ 1,500–3,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,100μs
38″ n-type Si:P [111] ±0.5° 525 P/E FZ 430–550 SEMI Prime, 1Flat, Empak cst, TTV<7μm
39″ n-type Si:P [111] ±0.5° 525 P/E FZ 430–550 SEMI Prime, 1Flat, Empak cst, TTV<7μm
40″ n-type Si:P [111] ±0.5° 500 ±13 E/E FZ 6.03–7.37 SEMI, 2Flats
41″ Intrinsic Si:- [111] ±0.5° 500 P/P FZ >25,000 SEMI Prime, 1Flat, Empak cst
42″ Intrinsic Si:- [111] ±0.5° 300 P/E FZ 20,000–40,000 SEMI, 1Flat, TTV<5μm, Empak cst
43″ Intrinsic Si:- [111] ±0.5° 500 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst, Extra 3 free non–prime wafers included with 4 prime wafers
44″ Intrinsic Si:- [111] ±0.5° 450 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst
45″ Intrinsic Si:- [111] ±0.5° 500 P/P FZ >10,000 SEMI Prime, 1Flat, Empak cst
46″ p-type Si:B [111] 350 P/E 2–3 Prime, NO Flats, Empak cst
47″ p-type Si:B [111] ±0.5° 1000 P/E 1–10 SEMI Prime, 1Flat, in hard cassettes of 7 & 8 wafers
48″ p-type Si:B [111] 1000 P/P 1–10 SEMI Prime, 1Flat, Empak cst, Cassettes of 10 and 10 wafers
49″ p-type Si:B [111] 1000 P/P 1–10 SEMI Prime, 1Flat, Empak cst
50″ p-type Si:B [111] ±0.5° 525 P/P 0.2–1.0 SEMI Prime, 1Flat, in Empak cassettes of 6, 7 & 7 wafers
51″ p-type Si:B [111–4°] ±0.5° 525 P/E 0.01–0.02 SEMI Prime, 1Flat, Empak cst
52″ p-type Si:B [111–4°] ±0.5° 525 ±15 P/EOx 0.005–0.015 {0.0086–0.0135} SEMI Prime, 1Flat, Empak cst, TTV<5μm, 5,000A LTO on back–side
53″ p-type Si:B [111–3°] ±0.5° 525 P/E 0.002–0.016 SEMI Prime, 1Flat, in Empak cassettes of 4, 5 & 5 wafers
54″ p-type Si:B [111–3°] 525 P/E 0.002–0.004 SEMI Prime, 1Flat, Empak cst
55″ ShowShoppingCartTally(); p-type Si:B [111] ±0.5° 1000 P/E <0.01 SEMI Prime, 1Flat, Empak cst

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.  PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.  PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for1

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