(111) Silicon Wafers

(111) Silicon Wafers

PAM XIAMEN offers (111) Silicon Wafers.
If you don’t see what you need then please email us your specs.

Diam
(mm)		 Material
Dopant		 Orient. Thck
(μm)		 Surf. Resistivity
Ωcm		 Comment
6″ n-type Si:P [111] ±0.5° 300 ±15 P/P FZ >6,000 SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
7″ n-type Si:P [111] ±0.5° 300 ±15 P/P FZ >6,000 SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
8″ Intrinsic Si:- [111] ±0.5° 750 E/E FZ >10,000 SEMI notch, TEST (defects, cannot be polished out), Empak cst
9″ p-type Si:B [111–4.0°] ±0.5° 625 P/E 4–15 {7.1–8.8} SEMI Prime, 1 JEIDA Flat(47.5mm), Empak cst
10″ n-type Si:P [111] ±0.5° 675 P/E 1–100 SEMI Prime, NO Flats, Empak cst
11″ Intrinsic Si:- [111] ±0.5° 675 C/C FZ >10,000 SEMI notch, Empak cst
12″ n-type Si:P [111] ±0.1° 200 ±15 BROKEN FZ >3,000 Broken L/L wafers, in 2 pieces
13″ n-type Si:P [111] 300 ±15 P/E FZ 1,000–3,000 SEMI Prime, in hard cassettes of 8 wafers
14″ n-type Si:Sb [111–3.0°] ±0.5° 625 P/E 0.015–0.020 {0.0152–0.0185} SEMI Prime, 2Flats, Empak cst
15″ p-type Si:B [111] ±0.5° 400 ±15 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Lifetime>1,000μs
16″ p-type Si:B [111] ±0.5° 397 P/E FZ 10,000–15,000 SEMI Prime, Backside ACID Etched, Empak cst
17″ n-type Si:P [111] ±0.25° 675 P/E FZ 10,000–20,000 SEMI TEST (Light scratches), 1Flat, Lifetime>1,000μs, Empak cst,
18″ n-type Si:P [111] ±0.5° 500 P/E FZ 10,000–15,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
19″ n-type Si:P [111] ±0.5° 675 P/E FZ >7,000 SEMI, 1Flat, in Empak, Lifetime>1,600μs
20″ n-type Si:P [111] ±0.5° 675 P/E FZ >7,000 SEMI TEST (Scratches, in Unsealed Empak cassette), 1Flat, Lifetime>1,600μs
21″ n-type Si:P [111] ±0.5° 675 P/E FZ >7,000 SEMI, 1Flat, Lifetime>1,600μs, in Empak cassettes of 6 and 8 wafers
22″ n-type Si:P [111] ±0.5° 630 P/G FZ >7,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Back–side Fine Ground
23″ n-type Si:P [111] ±0.25° 675 P/E FZ 7,000–10,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Light scratches
24″ n-type Si:P [111] ±0.5° 150 ±10 BROKEN FZ 5,000–10,000 Broken P/E wafers, in Empak
25″ n-type Si:P [111] ±0.25° 675 P/E FZ 5,000–7,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs
26″ n-type Si:P [111] ±0.25° 675 P/E FZ 5,000–7,000 SEMI TEST (light scratches), 1Flat, Lifetime>1,000μs, in Empak
27″ n-type Si:P [111] ±0.5° 525 P/E FZ >5,000 SEMI Prime, 1Flat, Lifetime>1,000μs, Empak cst
28″ n-type Si:P [111–1° towards[110]] ±0.5° 525 P/E FZ >5,000 SEMI TEST (scratches on back–side), 1Flat, Empak cst
29″ n-type Si:P [111] ±0.25° 525 P/E FZ 3,000–5,000 SEMI TEST (light scratches), 1Flat, Empak cst
30″ n-type Si:P [111] ±0.25° 525 P/E FZ 3,000–5,000 SEMI Prime, 1Flat, in Empak cassettes of 3, 3 & 4 wafers
31″ n-type Si:P [111] ±0.5° 525 P/P FZ >3,000 SEMI Prime, 2Flats, Lifetime>1,000μs, Empak cst
32″ n-type Si:P [111] ±0.5° 525 P/P FZ >3,000 SEMI Prime, 2Flats, Lifetime>1,000μs, in Empak cassettes of 5, & 10 wafers
33″ n-type Si:P [111] ±0.5° 525 P/P FZ >3,000 SEMI Prime, 1Flat (32.5mm)
34″ n-type Si:P [111] ±0.5° 285 ±10 P/P FZ 2,500–2,700 SEMI Prime, 2Flats, Empak cst
35″ n-type Si:P [111] ±0.5° 290 ±10 P/P FZ 2,500–3,500 SEMI TEST (Surface defects), 2Flats, Empak cst
36″ n-type Si:P [111] ±1° 380 P/E FZ 2,000–3,000 SEMI Prime, 1Flat, TTV<5μm, Lifetime>1,000μs, in Epak cassettes of 6 wafers
37″ n-type Si:P [111] ±0.5° 525 P/E FZ 1,500–3,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,100μs
38″ n-type Si:P [111] ±0.5° 525 P/E FZ 430–550 SEMI Prime, 1Flat, Empak cst, TTV<7μm
39″ n-type Si:P [111] ±0.5° 525 P/E FZ 430–550 SEMI Prime, 1Flat, Empak cst, TTV<7μm
40″ n-type Si:P [111] ±0.5° 500 ±13 E/E FZ 6.03–7.37 SEMI, 2Flats
41″ Intrinsic Si:- [111] ±0.5° 500 P/P FZ >25,000 SEMI Prime, 1Flat, Empak cst
42″ Intrinsic Si:- [111] ±0.5° 300 P/E FZ 20,000–40,000 SEMI, 1Flat, TTV<5μm, Empak cst
43″ Intrinsic Si:- [111] ±0.5° 500 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst, Extra 3 free non–prime wafers included with 4 prime wafers
44″ Intrinsic Si:- [111] ±0.5° 450 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst
45″ Intrinsic Si:- [111] ±0.5° 500 P/P FZ >10,000 SEMI Prime, 1Flat, Empak cst
46″ p-type Si:B [111] 350 P/E 2–3 Prime, NO Flats, Empak cst
47″ p-type Si:B [111] ±0.5° 1000 P/E 1–10 SEMI Prime, 1Flat, in hard cassettes of 7 & 8 wafers
48″ p-type Si:B [111] 1000 P/P 1–10 SEMI Prime, 1Flat, Empak cst, Cassettes of 10 and 10 wafers
49″ p-type Si:B [111] 1000 P/P 1–10 SEMI Prime, 1Flat, Empak cst
50″ p-type Si:B [111] ±0.5° 525 P/P 0.2–1.0 SEMI Prime, 1Flat, in Empak cassettes of 6, 7 & 7 wafers
51″ p-type Si:B [111–4°] ±0.5° 525 P/E 0.01–0.02 SEMI Prime, 1Flat, Empak cst
52″ p-type Si:B [111–4°] ±0.5° 525 ±15 P/EOx 0.005–0.015 {0.0086–0.0135} SEMI Prime, 1Flat, Empak cst, TTV<5μm, 5,000A LTO on back–side
53″ p-type Si:B [111–3°] ±0.5° 525 P/E 0.002–0.016 SEMI Prime, 1Flat, in Empak cassettes of 4, 5 & 5 wafers
54″ p-type Si:B [111–3°] 525 P/E 0.002–0.004 SEMI Prime, 1Flat, Empak cst
55″ ShowShoppingCartTally(); p-type Si:B [111] ±0.5° 1000 P/E <0.01 SEMI Prime, 1Flat, Empak cst

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.  PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.  PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for1

2019-02-22

Share this post

Related Posts

LT-GaAs

We offer LT-GaAs wafer for THz, detector, ultra-fast-optical experiments and other applications. 1. 2″ LT-GaAs Wafer Specification: Item Specifications Diamater(mm) Ф 50.8mm ± 1mm Thickness 1-2um or 2-3um Marco Defect Density ≤ 5 cm-2 Resistivity(300K) >108 Ohm-cm Carrier ＜1ps Dislocation Density <1×106cm-2 Useable Surface Area ≥80% Polishing Single side polished Substrate GaAs substrate   Remark: Other conditions: 1) GaAs substrate should be undoped/semi-insulating with (100)orientation. 2) Growth temperature: ~ 200-250 C 2. [...]

2013-10-11meta-author
Multi-pixel Spectral Imaging Module

PAM-256 multi-pixel energy spectrum imaging module is composed of one or several imaging unit. The CZT imaging unit is made of 16×16 pixel detector. With back-end ASIC, it can detect energy ranges from 10KeV~700KeV, fully satisfied γ camera and SPECT. Direct splice: The module has a [...]

2019-04-24meta-author
Incipient plasticity in 4H-SiC during quasistatic nanoindentation

We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University,  Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance  for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title:Incipient plasticity in 4H-SiC during quasistatic nanoindentation Published by: Saurav Goel ;Jiwang Yan ;Xichun Luo ;Anupam Agrawald a School of Mechanical and Aerospace [...]

2019-12-09meta-author
3″ FZ Silicon Ingot with Diameter 76mm

PAM XIAMEN offers 3″ FZ Silicon Ingot with Diameter 76mm Silicon ingot, per SEMI, G Ø76mm FZ n-type Si:P[100]±2.0° Ro=(1,500-7,000)Ohmcm, Ground Ingot, NO Flats, MCC Lifetime>1000µs, Oxygen<1E16/cc, Carbon<1E16/cc, Adequately packed, CofC: present. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

2020-05-27meta-author
Nickel Substrate & Foil (Single crystal and Polycrystalline )

PAM XIAMEN offers Nickel Substrate & Foil (Single crystal and Polycrystalline ). Ni Single crystal Ni Single Crystal Substrate, <100>, 10 x 5 x 0.5 mm, 1 side polished Ni Single Crystal Substrate, <100>, 10×10 x 0.5 mm, 1 side polished Ni Single Crystal [...]

2019-05-08meta-author
Highly selective PEC etching of gallium nitride device structures

Highly selective PEC etching of gallium nitride device structures   Photoelectrochemical (PEC) wet etching is an attractive wet etch approach for III-Nitride materials. Compared to dry etch techniques normally applied in prevalent GaN device fabrications, PEC wet etching can provide low damage, selective etching and understanding [...]

2013-03-05meta-author