PAM XIAMEN offers (112) Orientation Silicon Wafers.
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Item | Type/Dopant | Ori | Dia (mm) | Thck (μm) | Surf. | Resistivity Ωcm | Comment |
PAM3026 | n-type Si:P | [112-5.0° towards[11-1]] ±0.5° | 6″ | 875 ±10 | E/E | FZ >3,000 | SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips |
PAM3027 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 6″ | 1,000 ±10 | C/C | FZ >3,000 | SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs |
PAM3028 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 6″ | 800 ±10 | P/P | FZ >3,000 | SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs |
PAM3029 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 6″ | 950 ±10 | P/P | FZ >3,000 | SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs |
PAM3030 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 4″ | 765 | P/P | FZ ~100 | SEMI Prime, 1Flat, Empak cst, TTV<3μm |
PAM3031 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 4″ | 762 | P/P | FZ ~100 | SEMI Prime, 1Flat, Empak cst, TTV<3μm |
PAM3032 | n-type Si:P | [112-3° towards[11-1]] ±0.5° | 4″ | 762 | P/P | FZ >100 | SEMI Prime, 1Flat, Empak cst |
PAM3033 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 4″ | 795 | E/E | FZ >100 | SEMI, 1Flat, in Empak, TTV<4μm, Lifetime>2,000μs |
PAM3034 | n-type Si:As | [112-3° towards[111]] ±0.5° | 3″ | 890 | P/E | 0.002-0.003 | Prime, 2Flats, Empak cst |
PAM3035 | n-type Si:P | [112-3° towards[11-1]] ±0.5° | 3″ | 508 | P/P | FZ 50-150 | SEMI TEST, 1Flat, Empak cst |
PAM3036 | n-type Si:P | [112] ±0.5° | 4″ | 500 | P/P | 43784 | SEMI Prime, 1Flat, in Empak cassettes of 2 wafers |
For more information, please visit our website: https://www.powerwaywafer.com,
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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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