PAM XIAMEN offers 4″ FZ silicon ignot.
Silicon ingot, per SEMI, G 100.7±0.3mmØ,
FZ Intrinsic undoped Si:-[111]±2.0°, Ro > 25,000 Ohmcm,
Ground Ingot, NO Flats,
MCC Lifetime>1000µs.
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc,
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and [...]
2019-07-02meta-author
Unintentionally doped GaN were grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The high-resolution X-ray diffraction (HRXRD) and Lehighton contactless sheet resistance measuring systems were employed to characterize the quality and sheet resistance (Rs) of GaN epilayer. The threading dislocation density [...]
PAM XIAMEN offers 50.8mm Si wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2179
p-type Si:B
[100]
2″
300
P/E
1–10
SEMI Prime, 2Flats, hard cst
PAM2180
p-type Si:Ga
[100]
2″
350
P/P
1–5
SEMI Prime, 2Flats, hard cst
PAM2181
p-type Si:B
[100]
2″
500
P/E
1–2
SEMI Prime, 2Flats, hard cst
PAM2182
p-type Si:B
[100]
2″
900
P/E/P
1–10
SEMI Prime, 2Flats, hard cst
PAM2183
p-type Si:B
[100]
2″
2000
P/P
1–10
SEMI Prime, 2Flats, Individual cst
PAM2184
p-type Si:B
[100]
2″
2000
P/E
1–10
SEMI Prime, [...]
2019-02-18meta-author
PAM XIAMEN offers Si wafers.
Our clients often use the following spec for their soft lithography applications.
100mm P(100) 0-100 ohm-cm SSP 500um Test Grade
Not only can the above silicon wafers be used for soft lithography, our clients also use the wafers for PDMS micro-fluidic chip platforms [...]
2019-02-25meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
75 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
136 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.006-0.020
P/E
20
n- Si:P
300±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.006-0.020
P/E
21
n- Si:P
400±10%
N/N+
4″Øx525μm
n- Si:Sb[111]
0.005-0.020
P/E
22.5
n- Si:P
12.5±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
25
n- Si:P
0.08 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
25
n- Si:P
0.04 ±10%
N/N+
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
37.5
n- Si:P
270 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.006-0.020
P/E
37.5
n- Si:P
85±10%
N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
58
n- Si:P
60±10%
N/N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
15
n- Si:P
8±10%
N/N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
5
n- Si:P
3±10%
N/N/N/N+
4″Øx460μm
n- Si:Sb[111]
0.007-0.020
P/E
60
n- Si:P
40.5±4.5
N/N/N+
4″Øx460μm
n- Si:Sb[111]
0.007-0.020
P/E
20
n- Si:P
10±2
N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.005-0.020
P/E
60
n- Si:P
58.75 ±10%
N/N+
4″Øx525μm
n- Si:Sb[111]
0.005-0.020
P/E
60
n- [...]
2019-03-08meta-author
Abstract
The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 μm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately [...]
2017-09-05meta-author
