We can provide 2″ UV LED wafer and AlN wafer for medical & scientific applications including photodynamic therapy also benefit from a high power and high flux density LED.
1. Features & Dimensions of UV LED Wafer
Growth Technique – MOCVD
Substrate Material:Sapphire Substrate (Al2O3)
Substrate Conduction: Insulating
Substrate [...]
PAM XIAMEN offers 60+1mm FZ Si Ingot -2
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-11meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
2″
5000
P/E
3.4-3.7
SEMI Prime, Individual cst
n-type Si:P
[100]
2″
40 ±10
P/P
1-3
SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 5 wafers
n-type Si:P
[100]
2″
1000
P/P
1-10
SEMI Prime
n-type Si:Sb
[100]
2″
280
P/E
0.01-0.02
SEMI Prime
n-type Si:Sb
[100]
2″
1000
P/E
0.005-0.020
SEMI Prime
n-type Si:As
[100]
2″
300
P/P
0.001-0.005
SEMI Prime
n-type Si:As
[100]
2″
500
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[100]
2″
7000
P/E
0.001-0.005
SEMI Prime, Individual cst
n-type Si:P
[111]
2″
10000
P/E
46-52
SEMI Prime, Individual cst
n-type Si:P
[111]
2″
10000
P/E
46-52
SEMI Prime, Individual [...]
2019-03-07meta-author
PAM XIAMEN offers 3″ Silicon Wafer-21
Si wafer
Orientation: (111) ± 0.5°
Type: p-type
Dopant: B
Diameter: 76.2 ± 0.3 mm
Thickness: 380 ± 25 um
Disorientation: 2° to <11-2>
Resistivity: < 0.002 Ohm*cm
Single side polished
C Boron > E20 atom/cm3
Oi < 1E18 atom/cm3
[...]
2020-03-18meta-author
Monocrystalline Germanium (Ge) ingot is provided with P type by PAM-XIAMEN. Germanium crystal does not contain large-angle grain boundaries or twin crystals. It has a diamond-shaped crystal structure and is an important semiconductor material. According different applications, single crystal germanium ingot can be divided [...]
2021-10-08meta-author
By analyzing the MOSFET, it is known that the switch can be realized by controlling the change of the PN junction.
Field effect transistor
Type
Name
Principle
FET
JFET
Junction
PN junction
MOSFET
Metal oxide semiconductor
MESFET
Metal semiconductor
Schottky junction
MODFET
Modulation doping
HEMT
High electron mobility
In fact, a Schottky junction can be realized through another structure.
Definitions of Junctions
Starting from [...]
2021-04-02meta-author