1470 / 1550nm High Power Laser Single Chip

PAM XIAMEN offers 1470 / 1550nm high power laser single chip as follows:

Option1:1.5w:

Item	Parameters
wavelength	1470/1550nm
power	1.5 W
Working current	4 A
Working voltage	1.4 V
Strip width	96 μm
size	1000500150 μm
Divergence angle	11/31 degrees
Photoelectric conversion efficiency	26%

Option2: 3w:

Item	Parameters
wavelength	1470/1550nm
power	3 W
Working current	9A
Working voltage	1.5V
Strip width	96 μm
size	2000500150 μm
Divergence angle	11/28 degrees
Photoelectric conversion efficiency	21.3%

1470 / 1550nm High Power Laser Single Chip

For more information, please contact us email at [email protected] and [email protected]

2020-06-17

4″CZ Prime Silicon wafer-14

PAM XIAMEN offers 4″CZ Prime Silicon wafer-14 Silicon wafer dia 4 inch thickness 500 um P type boron doped or N doped resistivity 1-10 ohm cm orientation 100 For more information, send us email at [email protected] and [email protected]

2020-06-12meta-author

CZT Asymmetry Detector

CZT Asymmetry(Hemispherical) Detector PAM-H01 series are CZT crystal based hemispherical detectors which have a special structure. They can detect X-ray and middle to high energy γ-ray in a high energy resolution. Specification Material CdZnTe Density 5.8g/cm3 Volume resistance >1010Ω.cm Dimensions 5.5×5.0mm2 10.0×10.0mm2 Thickness 2.75mm 5.0mm Electrode material Au Operation temperature -20℃-+40℃ Energy range 10KeV~3MeV Energy resolution(22℃) <3%@662MeV Peak-compton ratio >3 >5 Storage temperture 10℃~40℃ Storage humidity 20%-80% Remarks Customized available Spectrum Features Room temperature working High [...]

2019-04-24meta-author

Philips Lighting Forms Smart Lighting Partnership with Huawei

Philips Lighting Forms Smart Lighting Partnership with Huawei Philips Lighting, a global leader in lighting, and Huawei Technologies have signed a partnership agreement to ensure the seamless interoperability of the Philips Hue connected lighting system for the home with Huawei’s OceanConnect Internet of Things (IoT) [...]

2016-09-26meta-author

Silicon Ingots -2

Silicon Ingots -2 PAM XIAMEN offers Silicon Ingots. Below is just a short list. Contac us if you need other specs! All diameters! Note: Material – CZ unless noted Kg in Properties of Silicon Stock Silicon Ingots Material Description 19.35 FZ SCRAP material n-type, Ro: 1,000-10,000 Ohmcm 5.6 FZ SCRAP material Intrinsic, Ro: >10,000 Ohmcm 5.12 6″Ø ingot [...]

2019-02-15meta-author

MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer

This letter describes the heteroepitaxy of InP on Si by MOCVD. A new epitaxial structure with a thin GaAs intermediate layer (InP/GaAs/Si) is proposed to alleviate the large lattice mismatch (8.4%) between InP and Si. Using this structure, a 4-inch InP single crystal with [...]

2019-08-19meta-author

4 inch Test Grade Silicon Wafer with Single Side Polished

PAM-XIAMEN can offer 4 inch test grade silicon wafer with single side polished. The parameters for 4″-SSP Si wafer at test grade are as follows: 1. Parameters of Si Single Crystal Wafer at Test Grade PAM-210310-Si wafer Sl No Item Specifications 1 Growing Method CZ 2 Wafer Diameter 100±0.5 mm 3 Wafer Thickness 525±25 μm 4 Wafer Surface Orientation <100>±0.5º 5 Type P type 6 Dopant Boron 7 Dislocation Density Less than 5000/cm2 8 Resistivity 2-8 [...]

2021-04-14meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

1470 / 1550nm High Power Laser Single Chip

1470 / 1550nm High Power Laser Single Chip