PAM XIAMEN offers 4″ FZ Silicon Ingot with Diameter 100.7±0.3mm
Si wafers
Orientation (100)
Dia 6” x thickness 500µm
Type n or p
1-20 ohm.cm
One side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-05-27meta-author
PAM XIAMEN offers high-quality BaF2 crystal substrate.
BaF2 is an excellent Infrared crystal and Scintillating crystal. PAM XIAMEN supplies BaF2 crystal substrate, window and blank for all IR applications.
Xtl Structure
Lattice (A)
Melting Point
Density g/cm3
Hardness
Thermal Expansion
Refractive index
Cubic
6.196
1354 oC
4.88
3 (mohs)
18.1×10-6 / oC)
ho 1.47443
BaF2, (100), 10x10x 0.5 mm, 2 sides polished
BaF2, (100), 10x10x 1.0 mm, [...]
2019-04-16meta-author
PAM XIAMEN offers Silicon Wafers.
Our clients often use the following silicon wafers for the above applications:
Si 100mm P(100) 0-100 ohm-cm SSP 500um Test Grade
PDMS micro-fluidic chip platforms for micro-organoid cell culture applications.
Microfluidic platform
Characterization
Definition of a microfluidic platform
A microfluidic platform provides a set of fluidic unit operations, [...]
2019-02-26meta-author
CZT α-ray Probe
PAM-01A1 series detectors are charged particles detector based on planar CZT crystal in a super small size. They have a high energy resolution in vacuum environment.
PAM-01A1 integrated customized CZT crystal and low noise charge sensitive preamplifier circuit. It can convert α-ray into [...]
2019-04-24meta-author
Impact of GaN buffer growth conditions on photoluminescence and X-ray diffraction characteristics of MOVPE grown bulk GaN
Properties of metalorganic vapor phase epitaxy (MOVPE) grown GaN bulk layers with varying GaN buffer growth conditions are characterized by low-temperature (6K) photoluminescence (LT-PL) and X-ray diffraction (XRD). [...]
2013-05-09meta-author
PAM XIAMEN offers 3″ Silicon Wafer-14
3″ Si wafer(32849), R≥200Ωcm
1. Diameter: 76.2 ± 0.1mm
2. The type of alloying: N-type/ phosphorus
.3. Orientation (111) ±0.5º
4. Disorientation 4°±0.5º to <110> axis direction
5. Resistivity: ≥200Ωcm
6. Primary surface: semi std
7. Secondary surface: none
8. Thickness: 380±25μm
9. Overall thickness variation on the plate [...]
2019-11-08meta-author
