150mm (6 Inch) Silicon Wafers

PAM XIAMEN offers 150mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.

Item Dia Type Dopant Orien Res
(Ohm-cm)
Thick
(um)
Polish Grade Description
PAM2716 150mm N/A 650um SSP MECH Low cost Si Wafer great for spin coating.
PAM2717 150mm P B <100> 0-10 620 um SSP Test Test Grade Silicon great for wafer processing studies.
PAM2718 150mm N <100> 0-100 625um SSP Test 6″ diameter (150mm), silicon wafers, N-type.
PAM2719 150mm P B <100> 0.006-0.012 525um SSP Test With Oxide Back Seal
PAM2720 150mm P B <100> 1-100 500um SSP Test 2 SEMI-STD FLATS WHERE THE PRIMARY FLAT IS <110>
PAM2721 150mm P B <111> 0-0.003 525um SSP Test No Certificate available, wafers sold “As-Is”.

 

Item Material Orient. Diam
(mm)
Thck
(μm)
Surf. Resistivity
(Ωcm)
Comment
PAM2722 Undoped [100] 6″ 650um SSP FZ >10,000 ohm-cm
PAM2723 N/P [100] 6″ 675um SSP FZ 2,000-10,000ohm-cm Prime Grade, Float Zone (FZ)
PAM2724 p-type Si:B [100] 6″ 625um P/E 0-100 ohm-cm Test Grade with flat
PAM2725 TYPE-ANY ANY 6″ 625um P/E Resistivity-ANY Mech Grade with flat
PAM2726 P/B [100] 6″ 675um P/E 0.01-0.02 ohm-cm With EPI layer, Hard wetblast/LTO L.M.
PAM2727 P/B [100] 6″ 725um P/E 14-22 ohm-cm sd-soft laser mark
PAM2728 P/B [100] 6″ 635-715um P/E 10-30 ohm-cm 1 semi std. flat
PAM2729 P/B [100] 6″ 650-700um P/E 10-30 ohm-cm 2 semi std flats
PAM2730 P/B [100] 6″ 610-640um P/E 0.008-0.02 ohm-cm WITH EPI layer, poly bagged & labeled silicon wafers
PAM2731 P/B [100] 6″ 650-690um P/E 100-200 ohm-cm
PAM2732 N/P [100] 6″ 625um P/E 56-72.5 ohm-cm Poly-SI
PAM2733 P/B [100] 6″ 675um P/E 15-25 ohm-cm Poly-SI L.M.
PAM2734 N/Phos [100] 6″ 320um P/E 2000-8000 ohm-cm Prime Grade, Float Zone (FZ)
PAM2735 p–type Si:B [100] 6″ 675 P/P FZ 10,000–20,000 SEMI Prime, 1Flat (57.5mm), Empak cst
PAM2736 p–type Si:B [100] 6″ 675 P/P FZ 5,000–20,000 SEMI Prime, 1Flat (57.5mm), Empak cst
PAM2737 p–type Si:B [100] 6″ 350 P/P FZ 2,700–3,250 SEMI Prime, 1Flat (57.5mm), Empak cst
PAM2738 p–type Si:B [100] 6″ 900 C/C FZ >50 SEMI Prime, 1Flat, MCC Lifetime>6,000μs, Empak cst
PAM2739 n–type Si:P [100] 6″ 825 C/C FZ 7,000–8,000 {7,025–7,856} SEMI, 1Flat, Lifetime=7,562μs, in Open Empak cst
PAM2740 n–type Si:P [100–6° towards[111]] ±0.5° 6″ 675 P/P FZ >3,500 SEMI Prime, 1Flat (57.5mm), Empak cst
PAM2741 n–type Si:P [100–6° towards[111]] ±0.5° 6″ 790 ±10 C/C FZ >3,500 SEMI, 1Flat, Empak cst
PAM2742 n–type Si:P [100–6° towards[111]] ±0.5° 6″ 675 P/P FZ >1,000 SEMI Prime, Notch on <010> {not on <011>}, Laser Mark, Empak cst
PAM2743 n–type Si:P [100–6° towards[111]] ±0.5° 6″ 675 BROKEN FZ >1,000 SEMI notch Test, Empak cst, Broken into many large pieces. One piece ~50% of wafers other pieces ~20% of wafer
PAM2744 n–type Si:P [100] 6″ 725 P/P FZ 50–70 {57–62} SEMI Prime, 1Flat (57.5mm), Lifetime=15,799μs, Empak cst
PAM2745 n–type Si:P [100] 6″ 725 P/P FZ 50–70 SEMI Prime, 1Flat (57.5mm), Empak cst
PAM2746 n–type Si:P [112–5.0° towards[11–1]] ±0.5° 6″ 875 ±10 E/E FZ >3,000 SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips
PAM2747 n–type Si:P [112–5° towards[11–1]] ±0.5° 6″ 1,000 ±10 C/C FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs
PAM2748 Intrinsic Si:– [100] 6″ 575 P/P FZ >10,000 SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,200µs, Empak cst
PAM2749 Intrinsic Si:– [100] 6″ 675 P/P FZ >10,000 SEMI notch Prime, Empak cst
PAM2750 Intrinsic Si:– [111] ±0.5° 6″ 750 E/E FZ >10,000 SEMI notch, TEST (defects, cannot be polished out), Empak cst
PAM2751 p–type Si:B [110] ±0.5° 6″ 390 ±10 C/C >10 Prime, 2Flats, Empak cst
PAM2752 p–type Si:B [100] 6″ 675 P/E 50–150 SEMI Prime, 1Flat (57.5mm), Empak cst
PAM2753 p–type Si:B [100] 6″ 675 P/E 5–10 SEMI Prime, 1Flat (57.5mm), Empak cst
PAM2754 p–type Si:B [100] 6″ 400 P/P 1–30 SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm
PAM2755 p–type Si:B [100] 6″ 415 ±15 P/P 1–30 SEMI Prime, 1Flat (57.5mm), Empak cst
PAM2756 p–type Si:B [100–9.7° towards[001]] ±0.1° 6″ 525 P/P 1–100 SEMI Prime, 1Flat (57.5mm), Empak cst
PAM2757 p–type Si:B [100] ±1° 6″ 575 P/P 1–20 SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<2μm
PAM2758 p–type Si:B [100] 6″ 675 P/P 1–100 SEMI Test, Both sides dirty and scratched, 1Flat, Empak cst
PAM2759 p–type Si:B [100] 6″ 675 P/E 1–10 {4.5–6.5} SEMI notch Prime, Empak cst, TTV<7μm
PAM2760 p–type Si:B [100] 6″ 675 P/E 1–100 SEMI Prime, 1Flat, Empak cst
PAM2761 p–type Si:B [100] 6″ 750 ±10 E/E 1–5 SEMI, 1Flat, Soft cst
PAM2762 p–type Si:B [100] 6″ 2000 P/P 1–35 SEMI Prime, 1Flat (57.5mm), Empak cst
PAM2763 p–type Si:B [100] 6″ 400 ±15 P/P 0.5–1.0 SEMI Prime, 1Flat (57.5mm), Empak cst
PAM2764 p–type Si:B [100] 6″ 365 ±10 E/E 0.01–0.02 SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst
PAM2765 p–type Si:B [100–6° towards[111]] ±0.5° 6″ 675 P/P 0.01–0.02 SEMI Prime, 1Flat (57.5mm), Empak cst, Both sides with scratches
PAM2766 p–type Si:B [100–6° towards[111]] ±0.5° 6″ 675 P/E 0.01–0.02 SEMI Prime, 1Flat (57.5mm), Empak cst, Both sides polished but only front is Prime
PAM2767 p–type Si:B [100] 6″ 675 P/E 0.01–0.02 SEMI Prime, 1Flat (57.5mm), Empak cst
PAM2768 p–type Si:B [100] 6″ 320 P/E 0.001–0.030 JEIDA Prime, Empak cst
PAM2769 p–type Si:B [100] 6″ 320 P/E 0.001–0.030 JEIDA Prime, Empak cst
PAM2770 p–type Si:B [100] 6″ 675 P/P 0.001–0.005 SEMI, 1Flat (57.5mm), Empak cst
PAM2771 p–type Si:B [111–4.0°] ±0.5° 6″ 625 P/E 4–15 {7.1–8.8} SEMI Prime, 1 JEIDA Flat(47.5mm), Empak cst
PAM2772 n–type Si:P [100] 6″ 725 P/P 5–35 SEMI Prime, 1 JEIDA Flat(47.5mm), TTV<2μm, TIR<1μm, Bow<10μm, Warp<20μm, With Laser Mark, Empak cst
PAM2773 n–type Si:P [100] 6″ 925 ±15 E/E 5–35 JEIDA Prime, Empak cst, TTV<5μm
PAM2774 n–type Si:P [100] 6″ 675 P/E 2.7–4.0 SEMI Prime, in Empak cassettes of 24 wafers
PAM2775 n–type Si:P [100] 6″ 675 P/E 2.7–4.0 SEMI Prime, in Empak cassettes of 6 & 7 wafers
PAM2776 n–type Si:P [100] 6″ 250 ±5 P/P 1–3 SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst
PAM2777 n–type Si:P [100–4° towards[110]] ±0.5° 6″ 675 P/E 1–25 SEMI Prime, 1Flat(57.5mm), Empak cst
PAM2778 n–type Si:P [100] ±1° 6″ 800 P/E 1–10 SEMI Prime, 1Flat(57.5mm), Empak cst
PAM2779 n–type Si:P [100–25° towards[110]] ±1° 6″ 800 C/C 1–100 SEMI notch Prime, Empak cst
PAM2780 n–type Si:P [100] 6″ 1,910 ±10 P/P 1–100 SEMI Prime, 1Flat (57.5mm), Individual cst, TTV<2μm
PAM2781 n–type Si:P [100] 6″ 1,910 ±10 P/P 1–100 SEMI Prime, 1Flat (57.5mm), Individual cst, TTV<5μm
PAM2782 n–type Si:P [100] 6″ 3000 P/P 1–100 SEMI Prime, 1Flat (57.5mm), Empak cst
PAM2783 n–type Si:P [100] 6″ 5000 P/P 1–25 Prime, NO Flats, Individual cst
PAM2784 n–type Si:Sb [100–6° towards[110]] ±0.5° 6″ 675 P/P 0.01–0.02 SEMI Prime, 1Flat (57.5mm), Empak cst
PAM2785 n–type Si:Sb [100] 6″ 675 P/E 0.008–0.020 SEMI Prime, 1Flat (57.5mm), Empak cst
PAM2786 n–type Si:As [100] 6″ 1000 L/L 0.0033–0.0037 SEMI, 1Flat(57.5mm), in individual wafer cassettes
PAM2787 n–type Si:As [100] 6″ 1000 L/L 0.0033–0.0037 SEMI, 1Flat(57.5mm), in individual wafer cassettes
PAM2788 n–type Si:As [100] 6″ 675 P/EOx 0.001–0.005 SEMI Prime, 1Flat (57.5mm), Empak cst, backside LTO 0.6um, TTV<3μm, Bow/Warp<15μm
PAM2789 n–type Si:P [100] 6″ 675 P/EOx 0.001–0.002 SEMI Prime, 1Flat (57.5mm), with strippable Epi layer Si:P (0.32–0.46)Ohmcm, 3.20±0.16μm thick, Empak cst
PAM2790 n–type Si:P [111] ±0.5° 6″ 675 P/E 1–100 SEMI Prime, NO Flats, Empak cst
PAM2791 n–type Si:As [100] 6″ 675 OxP/EOx 0.001–0.005 SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick, Empak cst
PAM2792 p–type Si:B [100] 6″ 735 P/P FZ >50 Prime, 1Flat, Empak cst, TTV<2μm
PAM2793 n–type Si:P [112–5° towards[11–1]] ±0.5° 6″ 800 ±10 P/P FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs
PAM2794 n–type Si:P [112–5° towards[11–1]] ±0.5° 6″ 950 ±10 P/P FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs
PAM2795 Intrinsic Si:– [100] 6″ 675 P/P FZ >10,000 SEMI notch Prime, Empak cst
PAM2796 p–type Si:B [100] 6″ 675 P/P 1–5 SEMI Prime, 1Flat, Soft cst

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.  PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.  PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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