PAM XIAMEN offers 150mm Si wafers. Please send us email at [email protected] if you need other specs and quantity.
Item | Dia | Type | Dopant | Orien | Res (Ohm-cm) |
Thick (um) |
Polish | Grade | Description |
PAM2716 | 150mm | N/A | 650um | SSP | MECH | Low cost Si Wafer great for spin coating. | |||
PAM2717 | 150mm | P | B | <100> | 0-10 | 620 um | SSP | Test | Test Grade Silicon great for wafer processing studies. |
PAM2718 | 150mm | N | <100> | 0-100 | 625um | SSP | Test | 6″ diameter (150mm), silicon wafers, N-type. | |
PAM2719 | 150mm | P | B | <100> | 0.006-0.012 | 525um | SSP | Test | With Oxide Back Seal |
PAM2720 | 150mm | P | B | <100> | 1-100 | 500um | SSP | Test | 2 SEMI-STD FLATS WHERE THE PRIMARY FLAT IS <110> |
PAM2721 | 150mm | P | B | <111> | 0-0.003 | 525um | SSP | Test | No Certificate available, wafers sold “As-Is”. |
Item | Material | Orient. | Diam (mm) |
Thck (μm) |
Surf. | Resistivity (Ωcm) |
Comment |
PAM2722 | Undoped | [100] | 6″ | 650um | SSP | FZ >10,000 ohm-cm | |
PAM2723 | N/P | [100] | 6″ | 675um | SSP | FZ 2,000-10,000ohm-cm | Prime Grade, Float Zone (FZ) |
PAM2724 | p-type Si:B | [100] | 6″ | 625um | P/E | 0-100 ohm-cm | Test Grade with flat |
PAM2725 | TYPE-ANY | ANY | 6″ | 625um | P/E | Resistivity-ANY | Mech Grade with flat |
PAM2726 | P/B | [100] | 6″ | 675um | P/E | 0.01-0.02 ohm-cm | With EPI layer, Hard wetblast/LTO L.M. |
PAM2727 | P/B | [100] | 6″ | 725um | P/E | 14-22 ohm-cm | sd-soft laser mark |
PAM2728 | P/B | [100] | 6″ | 635-715um | P/E | 10-30 ohm-cm | 1 semi std. flat |
PAM2729 | P/B | [100] | 6″ | 650-700um | P/E | 10-30 ohm-cm | 2 semi std flats |
PAM2730 | P/B | [100] | 6″ | 610-640um | P/E | 0.008-0.02 ohm-cm | WITH EPI layer, poly bagged & labeled silicon wafers |
PAM2731 | P/B | [100] | 6″ | 650-690um | P/E | 100-200 ohm-cm | |
PAM2732 | N/P | [100] | 6″ | 625um | P/E | 56-72.5 ohm-cm | Poly-SI |
PAM2733 | P/B | [100] | 6″ | 675um | P/E | 15-25 ohm-cm | Poly-SI L.M. |
PAM2734 | N/Phos | [100] | 6″ | 320um | P/E | 2000-8000 ohm-cm | Prime Grade, Float Zone (FZ) |
PAM2735 | p–type Si:B | [100] | 6″ | 675 | P/P | FZ 10,000–20,000 | SEMI Prime, 1Flat (57.5mm), Empak cst |
PAM2736 | p–type Si:B | [100] | 6″ | 675 | P/P | FZ 5,000–20,000 | SEMI Prime, 1Flat (57.5mm), Empak cst |
PAM2737 | p–type Si:B | [100] | 6″ | 350 | P/P | FZ 2,700–3,250 | SEMI Prime, 1Flat (57.5mm), Empak cst |
PAM2738 | p–type Si:B | [100] | 6″ | 900 | C/C | FZ >50 | SEMI Prime, 1Flat, MCC Lifetime>6,000μs, Empak cst |
PAM2739 | n–type Si:P | [100] | 6″ | 825 | C/C | FZ 7,000–8,000 {7,025–7,856} | SEMI, 1Flat, Lifetime=7,562μs, in Open Empak cst |
PAM2740 | n–type Si:P | [100–6° towards[111]] ±0.5° | 6″ | 675 | P/P | FZ >3,500 | SEMI Prime, 1Flat (57.5mm), Empak cst |
PAM2741 | n–type Si:P | [100–6° towards[111]] ±0.5° | 6″ | 790 ±10 | C/C | FZ >3,500 | SEMI, 1Flat, Empak cst |
PAM2742 | n–type Si:P | [100–6° towards[111]] ±0.5° | 6″ | 675 | P/P | FZ >1,000 | SEMI Prime, Notch on <010> {not on <011>}, Laser Mark, Empak cst |
PAM2743 | n–type Si:P | [100–6° towards[111]] ±0.5° | 6″ | 675 | BROKEN | FZ >1,000 | SEMI notch Test, Empak cst, Broken into many large pieces. One piece ~50% of wafers other pieces ~20% of wafer |
PAM2744 | n–type Si:P | [100] | 6″ | 725 | P/P | FZ 50–70 {57–62} | SEMI Prime, 1Flat (57.5mm), Lifetime=15,799μs, Empak cst |
PAM2745 | n–type Si:P | [100] | 6″ | 725 | P/P | FZ 50–70 | SEMI Prime, 1Flat (57.5mm), Empak cst |
PAM2746 | n–type Si:P | [112–5.0° towards[11–1]] ±0.5° | 6″ | 875 ±10 | E/E | FZ >3,000 | SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips |
PAM2747 | n–type Si:P | [112–5° towards[11–1]] ±0.5° | 6″ | 1,000 ±10 | C/C | FZ >3,000 | SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs |
PAM2748 | Intrinsic Si:– | [100] | 6″ | 575 | P/P | FZ >10,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,200µs, Empak cst |
PAM2749 | Intrinsic Si:– | [100] | 6″ | 675 | P/P | FZ >10,000 | SEMI notch Prime, Empak cst |
PAM2750 | Intrinsic Si:– | [111] ±0.5° | 6″ | 750 | E/E | FZ >10,000 | SEMI notch, TEST (defects, cannot be polished out), Empak cst |
PAM2751 | p–type Si:B | [110] ±0.5° | 6″ | 390 ±10 | C/C | >10 | Prime, 2Flats, Empak cst |
PAM2752 | p–type Si:B | [100] | 6″ | 675 | P/E | 50–150 | SEMI Prime, 1Flat (57.5mm), Empak cst |
PAM2753 | p–type Si:B | [100] | 6″ | 675 | P/E | 5–10 | SEMI Prime, 1Flat (57.5mm), Empak cst |
PAM2754 | p–type Si:B | [100] | 6″ | 400 | P/P | 1–30 | SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm |
PAM2755 | p–type Si:B | [100] | 6″ | 415 ±15 | P/P | 1–30 | SEMI Prime, 1Flat (57.5mm), Empak cst |
PAM2756 | p–type Si:B | [100–9.7° towards[001]] ±0.1° | 6″ | 525 | P/P | 1–100 | SEMI Prime, 1Flat (57.5mm), Empak cst |
PAM2757 | p–type Si:B | [100] ±1° | 6″ | 575 | P/P | 1–20 | SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<2μm |
PAM2758 | p–type Si:B | [100] | 6″ | 675 | P/P | 1–100 | SEMI Test, Both sides dirty and scratched, 1Flat, Empak cst |
PAM2759 | p–type Si:B | [100] | 6″ | 675 | P/E | 1–10 {4.5–6.5} | SEMI notch Prime, Empak cst, TTV<7μm |
PAM2760 | p–type Si:B | [100] | 6″ | 675 | P/E | 1–100 | SEMI Prime, 1Flat, Empak cst |
PAM2761 | p–type Si:B | [100] | 6″ | 750 ±10 | E/E | 1–5 | SEMI, 1Flat, Soft cst |
PAM2762 | p–type Si:B | [100] | 6″ | 2000 | P/P | 1–35 | SEMI Prime, 1Flat (57.5mm), Empak cst |
PAM2763 | p–type Si:B | [100] | 6″ | 400 ±15 | P/P | 0.5–1.0 | SEMI Prime, 1Flat (57.5mm), Empak cst |
PAM2764 | p–type Si:B | [100] | 6″ | 365 ±10 | E/E | 0.01–0.02 | SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst |
PAM2765 | p–type Si:B | [100–6° towards[111]] ±0.5° | 6″ | 675 | P/P | 0.01–0.02 | SEMI Prime, 1Flat (57.5mm), Empak cst, Both sides with scratches |
PAM2766 | p–type Si:B | [100–6° towards[111]] ±0.5° | 6″ | 675 | P/E | 0.01–0.02 | SEMI Prime, 1Flat (57.5mm), Empak cst, Both sides polished but only front is Prime |
PAM2767 | p–type Si:B | [100] | 6″ | 675 | P/E | 0.01–0.02 | SEMI Prime, 1Flat (57.5mm), Empak cst |
PAM2768 | p–type Si:B | [100] | 6″ | 320 | P/E | 0.001–0.030 | JEIDA Prime, Empak cst |
PAM2769 | p–type Si:B | [100] | 6″ | 320 | P/E | 0.001–0.030 | JEIDA Prime, Empak cst |
PAM2770 | p–type Si:B | [100] | 6″ | 675 | P/P | 0.001–0.005 | SEMI, 1Flat (57.5mm), Empak cst |
PAM2771 | p–type Si:B | [111–4.0°] ±0.5° | 6″ | 625 | P/E | 4–15 {7.1–8.8} | SEMI Prime, 1 JEIDA Flat(47.5mm), Empak cst |
PAM2772 | n–type Si:P | [100] | 6″ | 725 | P/P | 5–35 | SEMI Prime, 1 JEIDA Flat(47.5mm), TTV<2μm, TIR<1μm, Bow<10μm, Warp<20μm, With Laser Mark, Empak cst |
PAM2773 | n–type Si:P | [100] | 6″ | 925 ±15 | E/E | 5–35 | JEIDA Prime, Empak cst, TTV<5μm |
PAM2774 | n–type Si:P | [100] | 6″ | 675 | P/E | 2.7–4.0 | SEMI Prime, in Empak cassettes of 24 wafers |
PAM2775 | n–type Si:P | [100] | 6″ | 675 | P/E | 2.7–4.0 | SEMI Prime, in Empak cassettes of 6 & 7 wafers |
PAM2776 | n–type Si:P | [100] | 6″ | 250 ±5 | P/P | 1–3 | SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst |
PAM2777 | n–type Si:P | [100–4° towards[110]] ±0.5° | 6″ | 675 | P/E | 1–25 | SEMI Prime, 1Flat(57.5mm), Empak cst |
PAM2778 | n–type Si:P | [100] ±1° | 6″ | 800 | P/E | 1–10 | SEMI Prime, 1Flat(57.5mm), Empak cst |
PAM2779 | n–type Si:P | [100–25° towards[110]] ±1° | 6″ | 800 | C/C | 1–100 | SEMI notch Prime, Empak cst |
PAM2780 | n–type Si:P | [100] | 6″ | 1,910 ±10 | P/P | 1–100 | SEMI Prime, 1Flat (57.5mm), Individual cst, TTV<2μm |
PAM2781 | n–type Si:P | [100] | 6″ | 1,910 ±10 | P/P | 1–100 | SEMI Prime, 1Flat (57.5mm), Individual cst, TTV<5μm |
PAM2782 | n–type Si:P | [100] | 6″ | 3000 | P/P | 1–100 | SEMI Prime, 1Flat (57.5mm), Empak cst |
PAM2783 | n–type Si:P | [100] | 6″ | 5000 | P/P | 1–25 | Prime, NO Flats, Individual cst |
PAM2784 | n–type Si:Sb | [100–6° towards[110]] ±0.5° | 6″ | 675 | P/P | 0.01–0.02 | SEMI Prime, 1Flat (57.5mm), Empak cst |
PAM2785 | n–type Si:Sb | [100] | 6″ | 675 | P/E | 0.008–0.020 | SEMI Prime, 1Flat (57.5mm), Empak cst |
PAM2786 | n–type Si:As | [100] | 6″ | 1000 | L/L | 0.0033–0.0037 | SEMI, 1Flat(57.5mm), in individual wafer cassettes |
PAM2787 | n–type Si:As | [100] | 6″ | 1000 | L/L | 0.0033–0.0037 | SEMI, 1Flat(57.5mm), in individual wafer cassettes |
PAM2788 | n–type Si:As | [100] | 6″ | 675 | P/EOx | 0.001–0.005 | SEMI Prime, 1Flat (57.5mm), Empak cst, backside LTO 0.6um, TTV<3μm, Bow/Warp<15μm |
PAM2789 | n–type Si:P | [100] | 6″ | 675 | P/EOx | 0.001–0.002 | SEMI Prime, 1Flat (57.5mm), with strippable Epi layer Si:P (0.32–0.46)Ohmcm, 3.20±0.16μm thick, Empak cst |
PAM2790 | n–type Si:P | [111] ±0.5° | 6″ | 675 | P/E | 1–100 | SEMI Prime, NO Flats, Empak cst |
PAM2791 | n–type Si:As | [100] | 6″ | 675 | OxP/EOx | 0.001–0.005 | SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick, Empak cst |
PAM2792 | p–type Si:B | [100] | 6″ | 735 | P/P | FZ >50 | Prime, 1Flat, Empak cst, TTV<2μm |
PAM2793 | n–type Si:P | [112–5° towards[11–1]] ±0.5° | 6″ | 800 ±10 | P/P | FZ >3,000 | SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs |
PAM2794 | n–type Si:P | [112–5° towards[11–1]] ±0.5° | 6″ | 950 ±10 | P/P | FZ >3,000 | SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs |
PAM2795 | Intrinsic Si:– | [100] | 6″ | 675 | P/P | FZ >10,000 | SEMI notch Prime, Empak cst |
PAM2796 | p–type Si:B | [100] | 6″ | 675 | P/P | 1–5 | SEMI Prime, 1Flat, Soft cst |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.