1550nm laser diode wafers
PAM XIAMEN offers 1550nm laser diode wafers, which is an epitaxial wafer of a diode laser structure emitting around 1550 nm (on InP substrate), and the wafer dimension can be 2” or 3”. You can fabricate a laser for your application such as output cw power around 10-20 mW.
Structure1:
Layer | Material | Thickness(nm) | Carrier Concentratin (cmr3) |
Type | Dopant |
Contactlayer | Ino.sGaAs | — | — | P | — |
Ohmiccontact | 1.52Q InGaAsP |
— | — | P | Zn |
Ohmiccontact | 1.3Q InGaAsP |
— | — | P | — |
Cladding | InP | — | — | P | Zn |
Etchstop | 1.1Q InGaAsP |
— | — | P | — |
Spacer | InP | — | — | P | Zn |
SubCladding | AlInAs | — | — | — | — |
GRIN-SCH | [Al2Ga]InyAs | — | — | — | — |
QB | [Al,Ga]InyAs | — | — | — | — |
QW | [AlxGa]InyAs | — | — | — | — |
GRIN-SCH | [Al,Ga]InyAs | — | — | — | — |
SubCladding | [Al,Ga]InyAs | — | — | — | — |
Gradedlayer | [Al2Ga]InyAs | — | — | N | Si |
Cladding | InP | — | — | N | Si |
Buffer | InP | — | — | — | Si |
Substrate | InPSubstrate |
Structure2:
Layer | Material | Thickness(nm) | Carrier Concentration(cmr3) | Dopant | Type |
6 | InP | 20 | — | Zinc | P |
5 | GaIn(x)As | 170 | — | Zinc | P |
4 | GaIn(x)As(v)P | 30 | — | Zinc | P |
3 | InP | 2300 | — | Zinc | P |
2 | AlGaInAs MQW | 450 | — | Undoped | U/D |
PL 1500~1560nm | — | — | — | — | |
1 | InP buffer | — | — | silicon | N |
InP substrate | — | — | — | — |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com