PAM XIAMEN offers 1550nm laser diode wafers, which is an epitaxial wafer of a diode laser structure emitting around 1550 nm (on InP substrate), and the wafer dimension can be 2” or 3”. You can fabricate a laser for your application such as output cw power around 10-20 mW.
Structure1:
| Layer | Material | Thickness(nm) | Carrier Concentratin (cmr3) |
Type | Dopant |
| Contactlayer | Ino.sGaAs | — | — | P | — |
| Ohmiccontact | 1.52Q InGaAsP |
— | — | P | Zn |
| Ohmiccontact | 1.3Q InGaAsP |
— | — | P | — |
| Cladding | InP | — | — | P | Zn |
| Etchstop | 1.1Q InGaAsP |
— | — | P | — |
| Spacer | InP | — | — | P | Zn |
| SubCladding | AlInAs | — | — | — | — |
| GRIN-SCH | [Al2Ga]InyAs | — | — | — | — |
| QB | [Al,Ga]InyAs | — | — | — | — |
| QW | [AlxGa]InyAs | — | — | — | — |
| GRIN-SCH | [Al,Ga]InyAs | — | — | — | — |
| SubCladding | [Al,Ga]InyAs | — | — | — | — |
| Gradedlayer | [Al2Ga]InyAs | — | — | N | Si |
| Cladding | InP | — | — | N | Si |
| Buffer | InP | — | — | — | Si |
| Substrate | InPSubstrate | ||||
Structure2: PAM-200604-LD-1550
| Layer | Material | Thickness(nm) | Carrier Concentration(cmr3) | Dopant | Type |
| 6 | InP | 20 | — | Zinc | P |
| 5 | GaIn(x)As | 170 | — | Zinc | P |
| 4 | GaIn(x)As(v)P | 30 | — | Zinc | P |
| 3 | InP | 2300 | — | Zinc | P |
| 2 | AlGaInAs MQW | 450 | — | Undoped | U/D |
| PL 1500~1560nm | — | — | — | — | |
| 1 | InP buffer | — | — | silicon | N |
| InP substrate | — | — | — | — |
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com