2-11.Edge Chips
Any edge anomalies (including wafer saw exit marks) in excess of 1.0 mm in either radial depth or width. As viewed under diffuse illumination, edge chips are determined as unintentionally missing material from the edge of the wafer.
2-11.Edge Chips
Any edge anomalies (including wafer saw exit marks) in excess of 1.0 mm in either radial depth or width. As viewed under diffuse illumination, edge chips are determined as unintentionally missing material from the edge of the wafer.
1-1.lattice parameter The lattice constant, or lattice parameter, refers to the constant distance between unit cells in a crystal lattice. Lattices in three dimensions generally have three lattice constants, referred to as a, b, and c. However, in the special case of cubic crystal structures, [...]
2-1.Wafer Diameter The linear distance across the surface of a circular slice which contains the slice center and excludes any flats or other peripheral fiduciary areas. Standard silicon wafer diameters are: 25.4mm (1″), 50.4mm (2″), 76.2mm (3″), 100mm (4″), 125mm(5″), 150mm (6″), 200mm (8″), and [...]
2-27.BOW Bow is the deviation of the center point of the median surface of a free, un-clamped wafer from the median surface to the reference plane. Where the reference plane is defined by three corners of equilateral triangle. This definition is based on now obsolete [...]
2-21.Usable Area A cumulative subtraction of all noted defect areas from the frontside wafer quality area within the edge exclusion zone. The remaining percent value indicates the proportion of the frontside surface to be free of all noted defects (does not include edge exclusion).
5-4 SiC Semiconductor Crystal Growth As of this writing, much of the outstanding theoretical promise of SiC electronics highlighted in the previous section has largely gone unrealized. A brief historical examination quickly shows that serious shortcomings in SiC semiconductor material manufacturability and quality have greatly hindered the development [...]
5-6-4 SiC High-Power Switching Devices The inherent material properties and basic physics behind the large theoretical benefits of SiC over silicon for power switching devices were discussed Section 5.3.2. Similarly, it was discussed in Section 5.4.5 that crystallographic defects found in SiC wafers and epilayers [...]
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