2-30.Dopant
A dopant, also called a doping agent, is a trace impurity element that is inserted into a substance (in very low concentrations) in order to alter the electrical properties or the opticalproperties of the substance. In the case of crystalline substances, the atoms of [...]
2018-06-28meta-author
2-29.Resistivity
The resistance to current flow and movement of electron and hole carries in the silicon carbide. Resistivity is related to the ratio of voltage across the silicon to the current flowing through the silicon carbide per unit volume of silicon carbide. The units for [...]
2018-06-28meta-author
2-14.Masking Defects
also referred to as “Mound”
When one defect prevents the detection of another defect, the undetected defect is called the masked defect.
A distinct raised area above the wafer frontside surface as viewed with diffuse illumination.
2018-06-28meta-author
3-2. Scratches
Grooves or cuts below the surface plane of the wafer having a length-to-width ratio of greater than 5 to 1. Scratches are speci ed by the number of discrete scratches times the total length in fractional diameter.
2018-06-28meta-author
2-28.WARP
Warp is the difference between the maximum and the minimum distances of the median surface of a free, un-clamped wafer from the reference plane defined above. This definition follows ASTM F657, and ASTM F1390,which deviation from a plane of a slice or wafer centerline [...]
2018-06-28meta-author
2-23.Micropipe density
A micropipe, also referred to as “micropore”, “microtube”, “capillary defect “or “pinhole defect”, is a crystallographic defect in a single crystal substrate.It is a important parameter to manufacturers of silicon carbide (SiC) substrates which are used in a variety of industries such as [...]
2018-06-28meta-author