2-13.Hex Plate
Hexagonal shaped platelets on the surface of the wafer which appear silver in color to the unaided eye, under diffuse illumination.
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2-13.Hex Plate
Hexagonal shaped platelets on the surface of the wafer which appear silver in color to the unaided eye, under diffuse illumination.
5-4-1 Historical Lack of SiC Wafers Reproducible wafers of reasonable consistency, size, quality, and availability are a prerequisite for commercial mass production of semiconductor electronics. Many semiconductor materials can be melted and reproducibly recrystallized into large single crystals with the aid of a seed crystal, such as [...]
3-2. Scratches Grooves or cuts below the surface plane of the wafer having a length-to-width ratio of greater than 5 to 1. Scratches are speci ed by the number of discrete scratches times the total length in fractional diameter.
5-6-4-2 SiC High-Power Switching Transistors Three terminal power switches that use small drive signals to control large voltages and currents (i.e., power transistors) are also critical building blocks of high-power conversion circuits. However, as of this writing, SiC high-power switching transistors are not yet commercially [...]
2-19.Scratches A scratch is dened as a singular cut or groove into the frontside wafer surface with a length-to-width ratio of greater than 5 to 1, and visible under hight intensity illumination.
5-3-2 High-Power Device Operation The high breakdown field and high thermal conductivity of SiC coupled with high operational junction temperatures theoretically permit extremely high-power densities and efficiencies to be realized in SiC devices. The high breakdown field of SiC relative to silicon enables the blocking voltage region [...]
5-4-5 SiC Crystal Dislocation Defects Table 5.2 summarizes the major known dislocation defects found in present-day commercial 4H- and 6H-SiC wafers and epilayers . Since the active regions of devices reside in epilayers, the epilayer defect content is clearly of primary importance to SiC device [...]