2-14.Masking Defects
also referred to as “Mound”
When one defect prevents the detection of another defect, the undetected defect is called the masked defect.
A distinct raised area above the wafer frontside surface as viewed with diffuse illumination.
3-5. Backside Cleanliness Veri ed by inspecting for a uniform color to the wafer backside. Note there is a darker region near the center of some higher doped wafers. Backside cleanliness speci ed as percent area clean.
3-6. Edge Chips Areas where material has been unintentionally removed from the wafer.Do not confuse fractures in epi crown with edge chips.
2-7.Primary Flat Orientation The at of the longest length on the wafer, oriented such that the chord is parallel with a specied low index crystal plane. Measured on one wafer per ingot using Laue back-reection technique with manual angle measurement.
3-7. ID Correct and Major Wafer Flat Both should be readily discernible.
5-6-1 SiC Optoelectronic Devices The wide bandgap of SiC is useful for realizing short-wavelength blue and ultraviolet (UV) optoelectronics. 6H-SiC-based pn junction light-emitting diodes (LEDs) were the first semiconductor devices to cover the blue portion of the visible color spectrum, and became the first SiC-based devices to [...]
5-2-1-2 Electrical Properties Owing to the differing arrangement of Si and C atoms within the SiC crystal lattice, each SiC polytype exhibits unique fundamental electrical and optical properties. Some of the more important semiconductor electrical properties of the 3C, 4H, and 6H SiC polytypes are given in [...]
