2-10.Cracks
A fracture or cleavage of the wafer that extends from the frontside surface of the wafer to the back-side surface of the wafer. Cracks must exceed 0.010” in length under high intensity illumination in order to discriminate fracture lines from allowable crystalline striations. Fracture [...]
2018-06-28meta-author
5-3-1 High-Temperature Device Operation
The wide bandgap energy and low intrinsic carrier concentration of SiC allow SiC to maintain
semiconductor behavior at much higher temperatures than silicon, which in turn permits SiC semiconductor
device functionality at much higher temperatures than silicon . As discussed in basic
semiconductor electronic [...]
2018-06-28meta-author
2-32.Semi-insulating
Semi-insulating Doping with the impurities vanadium creates semi-insulating material of silicon carbide.
2018-06-28meta-author
5-6-4-1-1 SiC Schottky Power Rectifiers.
4H-SiC power Schottky diodes (with rated blocking voltages up to 1200 V and rated on-state currents up to 20 A as of this writing) are now commercially available . The basic structure of these unipolar diodes is a patterned metal [...]
2018-06-28meta-author
2-16.Pits
Individual distinguishable surface anomalies, which appears as a depression in the wafer surface with a lengthto-width ratio less than 5 to 1, and visible under high intensity illumination.
2018-06-28meta-author
5-2-1-1 SiC Crystallography
Silicon carbide occurs in many different crystal structures, called polytypes. Despite the fact that all SiC polytypes chemically consist of 50% carbon atoms covalently bonded with 50% silicon atoms, each SiC polytype has its own distinct set of electrical semiconductor properties. While [...]
2018-06-28meta-author