5-6-4-1-2 Bipolar and Hybrid Power Rectifiers
For higher voltage applications, bipolar minority carrier charge injection (i.e., conductivity modulation) should enable SiC pn diodes to carry higher current densities than unipolar Schottky diodes whose drift regions conduct solely using dopant-atom majority carriers . Consistent with silicon [...]
2018-06-28meta-author
2-13.Hex Plate
Hexagonal shaped platelets on the surface of the wafer which appear silver in color to the unaided eye, under diffuse illumination.
2018-06-28meta-author
5-3-2 High-Power Device Operation
The high breakdown field and high thermal conductivity of SiC coupled with high operational junction
temperatures theoretically permit extremely high-power densities and efficiencies to be realized in SiC
devices. The high breakdown field of SiC relative to silicon enables the blocking voltage region [...]
2018-06-28meta-author
5-3 Applications and Benefits of SiC Electronics
Two of the most beneficial advantages that SiC-based electronics offer are in the areas of high-temperature
and high-power device operation. The specific SiC device physics that enables high-temperature and
high-power capabilities will be examined first, by several examples of revolutionary [...]
2018-06-28meta-author
5-6 SiC Electronic Devices and Circuits
This section briefly summarizes a variety of SiC electronic device designs broken down by major application areas. SiC process and material technology issues limiting the capabilities of various SiC device topologies are highlighted as key issues to be addressed [...]
2018-06-28meta-author
1-2.Stacking Sequence
If we are going to make a laminated structure, we must know the thickness of each ply and the angle of each ply traditionally in degrees defined from the top layer down.
2018-06-28meta-author