2-15.Orange Peel
Visually detectable surface roughening when viewed under diffuse illumination.
2-15.Orange Peel
Visually detectable surface roughening when viewed under diffuse illumination.
1-5.Thermal Expansion Coefficient Thermal expansion is the tendency of matter to change in volume in response to a change in temperature. When a substance is heated, its particles begin moving more and thus usually maintain a greater average separation. Materials which contract with increasing temperature are [...]
5-4-4-1 SiC Epitaxial Growth Processes An interesting variety of SiC epitaxial growth methodologies, ranging from liquid-phase epitaxy, molecular beam epitaxy, and chemical vapor deposition(CVD) have been investigated . The CVD growth technique is generally accepted as the most promising method for attaining epilayer reproducibility, quality, [...]
5-1 Introduction Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide’s ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety [...]
2-21.Usable Area A cumulative subtraction of all noted defect areas from the frontside wafer quality area within the edge exclusion zone. The remaining percent value indicates the proportion of the frontside surface to be free of all noted defects (does not include edge exclusion).
5-6-1 SiC Optoelectronic Devices The wide bandgap of SiC is useful for realizing short-wavelength blue and ultraviolet (UV) optoelectronics. 6H-SiC-based pn junction light-emitting diodes (LEDs) were the first semiconductor devices to cover the blue portion of the visible color spectrum, and became the first SiC-based devices to [...]
5-4-5 SiC Crystal Dislocation Defects Table 5.2 summarizes the major known dislocation defects found in present-day commercial 4H- and 6H-SiC wafers and epilayers . Since the active regions of devices reside in epilayers, the epilayer defect content is clearly of primary importance to SiC device [...]