2-16.Pits
Individual distinguishable surface anomalies, which appears as a depression in the wafer surface with a lengthto-width ratio less than 5 to 1, and visible under high intensity illumination.
5-2-2-1 SiC Crystallography: Important Polytypes and Definitions Silicon carbide occurs in many different crystal structures, called polytypes. A more comprehensive introduction to SiC crystallography and polytypism can be found in Reference 9. Despite the fact that all SiC polytypes chemically consist of 50% carbon atoms covalently bonded [...]
2-24.Wafer Orientation Wafers are grown from crystal having a regular crystal structure, with silicon having a diamond cubic structure with a lattice spacing of 5.430710 Å (0.5430710 nm).When cut into wafers, the surface is aligned in one of several relative directions known as crystal orientations. [...]
2-20.Linear Crystallographic Defects Crystalline solids exhibit a periodic crystal structure. The positions of atoms or molecules occur on repeating fixed distances, determined by the unit cell parameters. However, the arrangement of atom or molecules in most crystalline materials is not perfect. The regular patterns are [...]
5-4-5 SiC Crystal Dislocation Defects Table 5.2 summarizes the major known dislocation defects found in present-day commercial 4H- and 6H-SiC wafers and epilayers . Since the active regions of devices reside in epilayers, the epilayer defect content is clearly of primary importance to SiC device [...]
2-3.Wafer Flat Length Linear dimension of the at measured with ANSI certied digital calipers on a sample of one wafer per ingot.
2-32.Semi-insulating Semi-insulating Doping with the impurities vanadium creates semi-insulating material of silicon carbide.
