2-16.Pits
Individual distinguishable surface anomalies, which appears as a depression in the wafer surface with a lengthto-width ratio less than 5 to 1, and visible under high intensity illumination.
2-16.Pits
Individual distinguishable surface anomalies, which appears as a depression in the wafer surface with a lengthto-width ratio less than 5 to 1, and visible under high intensity illumination.
2-12.Edge Exclusion The outer annulus of the wafer is designated as wafer handling area and is excluded from surface nish criteria (such as scratches, pits, haze, contamination, craters,dimples, grooves, mounds, orange peel and saw marks). This annulus is 2 mm for 76.2 mm substrates, and [...]
1-8.Electrical Breakdown The term electrical breakdown or electric breakdown has several similar but distinctly different meanings. For example, the term can apply to the failure of an electric circuit. Alternatively, it may refer to a rapid reduction in the resistance of an electrical insulator that [...]
5-3-1 High-Temperature Device Operation The wide bandgap energy and low intrinsic carrier concentration of SiC allow SiC to maintain semiconductor behavior at much higher temperatures than silicon, which in turn permits SiC semiconductor device functionality at much higher temperatures than silicon . As discussed in basic semiconductor electronic [...]
5-6-4-1 SiC High-Power Rectifiers The high-power diode rectifier is a critical building block of power conversion circuits. Recent reviews of experimental SiC rectifier results are given in References 3, 134, 172, 180, and 181. Most important SiC diode rectifier device design trade-offs roughly parallel well-known [...]
5-2-2-2 SiC Semiconductor Electrical Properties Owing to the differing arrangement of Si and C atoms within the SiC crystal lattice, each SiC polytype exhibits unique fundamental electrical and optical properties. Some of the more important semiconductor electrical properties of the 3C, 4H, and 6H SiC polytypes are [...]
5-3-3 System Benefits of High-Power High-Temperature SiC Devices Uncooled operation of high-temperature and high-power SiC electronics would enable revolutionary improvements to aerospace systems. Replacement of hydraulic controls and auxiliary power units with distributed “smart” electromechanical controls capable of harsh ambient operation will enable substantial jet-aircraft weight savings, reduced [...]