2-17.Polytypes Many compound materials exhibit polymorphism, that is they can exist in different structures called polymorphs. Silicon carbide (SiC) is unique in this regard as more than 250 polymorphs of silicon carbide had been identified by 2006,with some of them having a lattice constant as [...]
2018-06-28meta-author
5-6-2 SiC RF Devices The main use of SiC RF devices appears to lie in high-frequency solid-state high-power amplification at frequencies from around 600 MHz (UHF-band) to perhaps as high as a few gigahertz (X-band). As discussed in far greater detail in References 5, 6, [...]
2018-06-28meta-author
5-6-4-1 SiC High-Power Rectifiers The high-power diode rectifier is a critical building block of power conversion circuits. Recent reviews of experimental SiC rectifier results are given in References 3, 134, 172, 180, and 181. Most important SiC diode rectifier device design trade-offs roughly parallel well-known [...]
2018-06-28meta-author
5-5-5 SiC Insulators: Thermal Oxides and MOS Technology The vast majority of semiconductor-integrated circuit chips in use today rely on silicon metal-oxide– semiconductor field-effect transistors (MOSFETs), whose electronic advantages and operational device physics are summarized in Katsumata’s chapter and elsewhere . Given the extreme usefulness and success of [...]
2018-06-28meta-author
1-4.Density The mass density or density of a material is its mass per unit volume. The symbol most often used for density is ρ (the lower case Greek letter rho). Mathematically, density is defined as mass divided by volume:
2018-06-28meta-author
2-6.Wafer Primary Flat The flat of longest length on the wafer, oriented such that the chord is parallel with a specified low index crystal plane; major flat. The primary at is the {10-10} plane with the at face parallel to the <11-20> direction.
2018-06-28meta-author