2-18.Grain boundaries
They are interfaces where crystals of different orientations meet. A grain boundary is a single-phase interface, with crystals on each side of the boundary being identical except in orientation. The term “crystallite boundary” is sometimes, though rarely, used. Grain boundary areas contain those atoms that have been perturbed from their original lattice sites, dislocations, and impurities that have migrated to the lower energy grain boundary.
3-8. 3C Inclusions Regions where step- ow was interrupted during epi layer growth. Typical regions are generally triangular although more rounded shapes are sometimes seen. Count once per occurrence. Two inclusions within 200 microns count as one.
2-13.Hex Plate Hexagonal shaped platelets on the surface of the wafer which appear silver in color to the unaided eye, under diffuse illumination.
2-32.Semi-insulating Semi-insulating Doping with the impurities vanadium creates semi-insulating material of silicon carbide.
2-4.Wafer Surface Orientation Denotes the orientation of the surface of a wafer with respect to a crystallographic plane within the lattice structure. In wafers cut intentionally “off orientation”, the direction of cut is parallel to the primary at, away from the secondary at. Measured with [...]
2-7.Primary Flat Orientation The at of the longest length on the wafer, oriented such that the chord is parallel with a specied low index crystal plane. Measured on one wafer per ingot using Laue back-reection technique with manual angle measurement.
5-5-4 Patterned Etching of SiC for Device Fabrication At room temperature, there are no known conventional wet chemicals that etch single-crystal SiC. Most patterned etching of SiC for electronic devices and circuits is accomplished using dry etching techniques. The reader should consult References 122–124 which contain summaries [...]
