5-3-2 High-Power Device Operation
The high breakdown field and high thermal conductivity of SiC coupled with high operational junction
temperatures theoretically permit extremely high-power densities and efficiencies to be realized in SiC
devices. The high breakdown field of SiC relative to silicon enables the blocking voltage region [...]
2018-06-28meta-author
2-31.N type
A semiconductor has electrical conductivity between that of a conductor and an insulator. Semiconductors differ from metals in their characteristic property of decreasing electrical resistivity with increasing temperature.Semiconductors can also display properties of passing current more easily in one direction than the other, [...]
2018-06-28meta-author
5-6-4-1-2 Bipolar and Hybrid Power Rectifiers
For higher voltage applications, bipolar minority carrier charge injection (i.e., conductivity modulation) should enable SiC pn diodes to carry higher current densities than unipolar Schottky diodes whose drift regions conduct solely using dopant-atom majority carriers . Consistent with silicon [...]
2018-06-28meta-author
1-3.Mohs Hardness
Rough measure of the resistance of a smooth surface to scratching or abrasion, expressed in terms of a scale devised(1812)by the German mineralogist Friedrich Mohs. The Mohs hardness of a mineral is determined by observing whether its surface is scratched by a substance [...]
2018-06-28meta-author
5-4-4-2 SiC Epitaxial Growth Polytype Control
Homoepitaxial growth, whereby the polytype of the SiC epilayer matches the polytype of the SiC substrate, is accomplished by “step-controlled” epitaxy . Step-controlled epitaxy is based upon growing epilayers on an SiC wafer polished at an angle (called the [...]
2018-06-28meta-author
5-6-1 SiC Optoelectronic Devices
The wide bandgap of SiC is useful for realizing short-wavelength blue and ultraviolet (UV) optoelectronics.
6H-SiC-based pn junction light-emitting diodes (LEDs) were the first semiconductor devices
to cover the blue portion of the visible color spectrum, and became the first SiC-based devices to [...]
2018-06-28meta-author