2-18.Grain boundaries
They are interfaces where crystals of different orientations meet. A grain boundary is a single-phase interface, with crystals on each side of the boundary being identical except in orientation. The term “crystallite boundary” is sometimes, though rarely, used. Grain boundary areas contain those atoms that have been perturbed from their original lattice sites, dislocations, and impurities that have migrated to the lower energy grain boundary.
2-30.Dopant A dopant, also called a doping agent, is a trace impurity element that is inserted into a substance (in very low concentrations) in order to alter the electrical properties or the opticalproperties of the substance. In the case of crystalline substances, the atoms of [...]
5-5-2 SiC-Selective Doping: Ion Implantation The fact that diffusion coefficients of most SiC dopants are negligibly small (at 1800°C) is excellent for maintaining device junction stability, because dopants do not undesirably diffuse as the device is operated long term at high temperatures. Unfortunately, this characteristic also largely [...]
1-6.Refraction Index In optics the refractive index (or index of refraction) n of a substance (optical medium) is a number that describes how light, or any other radiation, propagates through that medium. Refractive index of materials varies with the wavelength. This is called dispersion; it causes [...]
5-2-2-2 SiC Semiconductor Electrical Properties Owing to the differing arrangement of Si and C atoms within the SiC crystal lattice, each SiC polytype exhibits unique fundamental electrical and optical properties. Some of the more important semiconductor electrical properties of the 3C, 4H, and 6H SiC polytypes are [...]
1-5.Thermal Expansion Coefficient Thermal expansion is the tendency of matter to change in volume in response to a change in temperature. When a substance is heated, its particles begin moving more and thus usually maintain a greater average separation. Materials which contract with increasing temperature are [...]
2-7.Primary Flat Orientation The at of the longest length on the wafer, oriented such that the chord is parallel with a specied low index crystal plane. Measured on one wafer per ingot using Laue back-reection technique with manual angle measurement.
