2-2.Wafer Thickness, Center Point
Thin (thickness depends on wafer diameter, but is typically less than 1mm),circular slice of single-crystal semiconductor material cut from the ingot of single crystal semiconductor; used in manufacturing of semiconductor devices and integrated circuits; wafer diameters may range from 5mm to 300mm.
Measured with ANSI certied non-contact tools at the center of each individual wafer.
5-3-3 System Benefits of High-Power High-Temperature SiC Devices Uncooled operation of high-temperature and high-power SiC electronics would enable revolutionary improvements to aerospace systems. Replacement of hydraulic controls and auxiliary power units with distributed “smart” electromechanical controls capable of harsh ambient operation will enable substantial jet-aircraft weight savings, reduced [...]
5-6 SiC Electronic Devices and Circuits This section briefly summarizes a variety of SiC electronic device designs broken down by major application areas. SiC process and material technology issues limiting the capabilities of various SiC device topologies are highlighted as key issues to be addressed [...]
5-6-5 SiC MicroElectromechanical Systems (MEMS) and Sensors As described in Hesketh’s chapter on micromachining in this book, the development and use of siliconbased MEMS continues to expand. While the previous sections of this chapter have centered on the use of SiC for traditional semiconductor electronic [...]
3-9. Comet Tails Comet tails have a discrete head and trailing tail. These features are aligned parallel to the major at. Usually, all comet tails tend to be of the same length. Count once per occurrence. Two comet tails within 200 microns count as [...]
2-3.Wafer Flat Length Linear dimension of the at measured with ANSI certied digital calipers on a sample of one wafer per ingot.
5-4-4-1 SiC Epitaxial Growth Processes An interesting variety of SiC epitaxial growth methodologies, ranging from liquid-phase epitaxy, molecular beam epitaxy, and chemical vapor deposition(CVD) have been investigated . The CVD growth technique is generally accepted as the most promising method for attaining epilayer reproducibility, quality, [...]
