2-2.Wafer Thickness, Center Point
Thin (thickness depends on wafer diameter, but is typically less than 1mm),circular slice of single-crystal semiconductor material cut from the ingot of single crystal semiconductor; used in manufacturing of semiconductor devices and integrated circuits; wafer diameters may range from 5mm to 300mm.
Measured with ANSI certied non-contact tools at the center of each individual wafer.
2-32.Semi-insulating Semi-insulating Doping with the impurities vanadium creates semi-insulating material of silicon carbide.
5-2-1-2 Electrical Properties Owing to the differing arrangement of Si and C atoms within the SiC crystal lattice, each SiC polytype exhibits unique fundamental electrical and optical properties. Some of the more important semiconductor electrical properties of the 3C, 4H, and 6H SiC polytypes are given in [...]
1-3.Mohs Hardness Rough measure of the resistance of a smooth surface to scratching or abrasion, expressed in terms of a scale devised(1812)by the German mineralogist Friedrich Mohs. The Mohs hardness of a mineral is determined by observing whether its surface is scratched by a substance [...]
3-4. Step Bunching Step bunching is visible as a pattern of parallel lines running perpendicular to the major at. If present, estimate the % of speci ed area affected.
2-28.WARP Warp is the difference between the maximum and the minimum distances of the median surface of a free, un-clamped wafer from the reference plane defined above. This definition follows ASTM F657, and ASTM F1390,which deviation from a plane of a slice or wafer centerline [...]
Most analog signal conditioning and digital logic circuits are considered “signal level” in that individual transistors in these circuits do not typically require any more than a few milliamperes of current and <20 V to function properly. Commercially available silicon-on-insulator circuits can perform complex digital and [...]
