A texture resembling the surface of a golf ball. Speci ed in % affected area.
5-7-2 Further Recommended Reading
5-6-4-1 SiC High-Power Rectifiers
The high-power diode rectifier is a critical building block of power conversion circuits. Recent reviews of experimental SiC rectifier results are given in References 3, 134, 172, 180, and 181. Most important SiC diode rectifier device design trade-offs roughly parallel well-known [...]
3-5. Backside Cleanliness
Veri ed by inspecting for a uniform color to the wafer backside. Note there is a darker region near the center of some higher doped wafers. Backside cleanliness speci ed as percent area clean.
5-6-4-1-1 SiC Schottky Power Rectifiers.
4H-SiC power Schottky diodes (with rated blocking voltages up to 1200 V and rated on-state currents up to 20 A as of this writing) are now commercially available . The basic structure of these unipolar diodes is a patterned metal [...]
5-5-2 SiC-Selective Doping: Ion Implantation
The fact that diffusion coefficients of most SiC dopants are negligibly small (at 1800°C) is excellent for
maintaining device junction stability, because dopants do not undesirably diffuse as the device is operated
long term at high temperatures. Unfortunately, this characteristic also largely [...]