5-3-1 High-Temperature Device Operation
The wide bandgap energy and low intrinsic carrier concentration of SiC allow SiC to maintain
semiconductor behavior at much higher temperatures than silicon, which in turn permits SiC semiconductor
device functionality at much higher temperatures than silicon . As discussed in basic
semiconductor electronic [...]
2018-06-28meta-author
2-1.Wafer Diameter
The linear distance across the surface of a circular slice which contains the slice center and excludes any flats or other peripheral fiduciary areas. Standard silicon wafer diameters are: 25.4mm (1″), 50.4mm (2″), 76.2mm (3″), 100mm (4″), 125mm(5″), 150mm (6″), 200mm (8″), and [...]
2018-06-28meta-author
5-5-6 SiC Device Packaging and System Considerations
Hostile-environment SiC semiconductor devices and ICs are of little advantage if they cannot be reliably packaged and connected to form a complete system capable of hostile-environment operation. With proper material selection, modifications of existing IC packaging technologies appear [...]
2018-06-28meta-author
2-17.Polytypes
Many compound materials exhibit polymorphism, that is they can exist in different structures called polymorphs. Silicon carbide (SiC) is unique in this regard as more than 250 polymorphs of silicon carbide had been identified by 2006,with some of them having a lattice constant as [...]
2018-06-28meta-author
1-4.Density
The mass density or density of a material is its mass per unit volume. The symbol most often used for density is ρ (the lower case Greek letter rho). Mathematically, density is defined as mass divided by volume:
2018-06-28meta-author
5-6-4 SiC High-Power Switching Devices
The inherent material properties and basic physics behind the large theoretical benefits of SiC over silicon for power switching devices were discussed Section 5.3.2. Similarly, it was discussed in Section 5.4.5 that crystallographic defects found in SiC wafers and epilayers [...]
2018-06-28meta-author