2-15.Orange Peel
Visually detectable surface roughening when viewed under diffuse illumination.
2018-06-28meta-author
5-4-1 Historical Lack of SiC Wafers
Reproducible wafers of reasonable consistency, size, quality, and availability are a prerequisite for
commercial mass production of semiconductor electronics. Many semiconductor materials can be melted
and reproducibly recrystallized into large single crystals with the aid of a seed crystal, such as [...]
2018-06-28meta-author
5-4-4-1 SiC Epitaxial Growth Processes
An interesting variety of SiC epitaxial growth methodologies, ranging from liquid-phase epitaxy, molecular beam epitaxy, and chemical vapor deposition(CVD) have been investigated . The CVD growth technique is generally accepted as the most promising method for attaining epilayer reproducibility, quality, [...]
2018-06-28meta-author
2-4.Wafer Surface Orientation
Denotes the orientation of the surface of a wafer with respect to a crystallographic plane within the lattice structure.
In wafers cut intentionally “off orientation”, the direction of cut is parallel to the primary at, away from the secondary at.
Measured with [...]
2018-06-28meta-author
5-1 Introduction
Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed
for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors
cannot adequately perform. Silicon carbide’s ability to function under such extreme conditions
is expected to enable significant improvements to a far-ranging variety [...]
2018-06-28meta-author
2-10.Cracks
A fracture or cleavage of the wafer that extends from the frontside surface of the wafer to the back-side surface of the wafer. Cracks must exceed 0.010” in length under high intensity illumination in order to discriminate fracture lines from allowable crystalline striations. Fracture [...]
2018-06-28meta-author