2-21.Usable Area
A cumulative subtraction of all noted defect areas from the frontside wafer quality area within the edge exclusion zone. The remaining percent value indicates the proportion of the frontside surface to be free of all noted defects (does not include edge exclusion).
2-9.(Area) Wafer Contamination Any foreign matter on the surface in localized areas which is revealed under high intensity (or diffuse) illumination as discolored, mottled, or cloudy appearance resulting from smudges, stains or water spots.
2-29.Resistivity The resistance to current flow and movement of electron and hole carries in the silicon carbide. Resistivity is related to the ratio of voltage across the silicon to the current flowing through the silicon carbide per unit volume of silicon carbide. The units for [...]
5-6-1 SiC Optoelectronic Devices The wide bandgap of SiC is useful for realizing short-wavelength blue and ultraviolet (UV) optoelectronics. 6H-SiC-based pn junction light-emitting diodes (LEDs) were the first semiconductor devices to cover the blue portion of the visible color spectrum, and became the first SiC-based devices to [...]
2-23.Micropipe density A micropipe, also referred to as “micropore”, “microtube”, “capillary defect “or “pinhole defect”, is a crystallographic defect in a single crystal substrate.It is a important parameter to manufacturers of silicon carbide (SiC) substrates which are used in a variety of industries such as [...]
5-7 Future of SiC It can be safely predicted that SiC will never displace silicon as the dominant semiconductor used for the manufacture of the vast majority of the world’s electronic chips that are primarily low-voltage digital and analog chips targeted for operation in normal [...]
5-6-2 SiC RF Devices The main use of SiC RF devices appears to lie in high-frequency solid-state high-power amplification at frequencies from around 600 MHz (UHF-band) to perhaps as high as a few gigahertz (X-band). As discussed in far greater detail in References 5, 6, [...]
