5-6-4-1-1 SiC Schottky Power Rectifiers.
4H-SiC power Schottky diodes (with rated blocking voltages up to 1200 V and rated on-state currents up to 20 A as of this writing) are now commercially available . The basic structure of these unipolar diodes is a patterned metal [...]
2018-06-28meta-author
5-5 SiC Device Fundamentals
To minimize the development and production costs of SiC electronics, it is important that SiC device fabrication takes advantage of existing silicon and GaAs wafer processing infrastructure as much as possible. As will be discussed in this section, most of the [...]
2018-06-28meta-author
2-36.Reclaim Grade
Reclaim Grade:A lower quality wafer that has been used in manufacturing and then reclaimed , etched or polished, and then used a second time in manufacturing.
2018-06-28meta-author
5-4-2 Growth of 3C-SiC on Large-Area (Silicon) Substrates
Despite the absence of SiC substrates, the potential benefits of SiC hostile-environment electronics nevertheless drove modest research efforts aimed at obtaining SiC in a manufacturable wafer form.Toward this end, the heteroepitaxial growth of single-crystal SiC layers on [...]
2018-06-28meta-author
2-25.FWHM
Full width at half maximum (FWHM) is an expression of the extent of a function, given by the difference between the two extreme values of the independent variable at which the dependent variable is equal to half of its maximum value.
2018-06-28meta-author
2-17.Polytypes
Many compound materials exhibit polymorphism, that is they can exist in different structures called polymorphs. Silicon carbide (SiC) is unique in this regard as more than 250 polymorphs of silicon carbide had been identified by 2006,with some of them having a lattice constant as [...]
2018-06-28meta-author