5-6-4-1-1 SiC Schottky Power Rectifiers.
4H-SiC power Schottky diodes (with rated blocking voltages up to 1200 V and rated on-state currents up to 20 A as of this writing) are now commercially available . The basic structure of these unipolar diodes is a patterned metal [...]
The resistance to current flow and movement of electron and hole carries in the silicon carbide. Resistivity is related to the ratio of voltage across the silicon to the current flowing through the silicon carbide per unit volume of silicon carbide. The units for [...]
If we are going to make a laminated structure, we must know the thickness of each ply and the angle of each ply traditionally in degrees defined from the top layer down.
A semiconductor has electrical conductivity between that of a conductor and an insulator. Semiconductors differ from metals in their characteristic property of decreasing electrical resistivity with increasing temperature.Semiconductors can also display properties of passing current more easily in one direction than the other, [...]
Hexagonal shaped platelets on the surface of the wafer which appear silver in color to the unaided eye, under diffuse illumination.
Test Grade: A silicon carbide wafer of lower quality than Prime, and used primarily for testing processes. SEMI indicates the bulk, surface, and physical properties required to label silicon carbide wafers as “Test Wafers”.