2-25.FWHM
Full width at half maximum (FWHM) is an expression of the extent of a function, given by the difference between the two extreme values of the independent variable at which the dependent variable is equal to half of its maximum value.
5-4-4-2 SiC Epitaxial Growth Polytype Control Homoepitaxial growth, whereby the polytype of the SiC epilayer matches the polytype of the SiC substrate, is accomplished by “step-controlled” epitaxy . Step-controlled epitaxy is based upon growing epilayers on an SiC wafer polished at an angle (called the [...]
1-1.lattice parameter The lattice constant, or lattice parameter, refers to the constant distance between unit cells in a crystal lattice. Lattices in three dimensions generally have three lattice constants, referred to as a, b, and c. However, in the special case of cubic crystal structures, [...]
1-8.Electrical Breakdown The term electrical breakdown or electric breakdown has several similar but distinctly different meanings. For example, the term can apply to the failure of an electric circuit. Alternatively, it may refer to a rapid reduction in the resistance of an electrical insulator that [...]
2-15.Orange Peel Visually detectable surface roughening when viewed under diffuse illumination.
3-12. Silicon Droplets Silicon droplets can appear as either small mounds or depressions in the wafer surface. Normally absent, but if present are largely concentrated at perimeter of wafer. If present, estimate the % of speci ed area affected.
5-2-2-2 SiC Semiconductor Electrical Properties Owing to the differing arrangement of Si and C atoms within the SiC crystal lattice, each SiC polytype exhibits unique fundamental electrical and optical properties. Some of the more important semiconductor electrical properties of the 3C, 4H, and 6H SiC polytypes are [...]
