5-1 Introduction
Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed
for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors
cannot adequately perform. Silicon carbide’s ability to function under such extreme conditions
is expected to enable significant improvements to a far-ranging variety [...]
2018-06-28meta-author
5-4-4-1 SiC Epitaxial Growth Processes
An interesting variety of SiC epitaxial growth methodologies, ranging from liquid-phase epitaxy, molecular beam epitaxy, and chemical vapor deposition(CVD) have been investigated . The CVD growth technique is generally accepted as the most promising method for attaining epilayer reproducibility, quality, [...]
2018-06-28meta-author
2-11.Edge Chips
Any edge anomalies (including wafer saw exit marks) in excess of 1.0 mm in either radial depth or width. As viewed under diffuse illumination, edge chips are determined as unintentionally missing material from the edge of the wafer.
2018-06-28meta-author
1-5.Thermal Expansion Coefficient
Thermal expansion is the tendency of matter to change in volume in response to a change in temperature.
When a substance is heated, its particles begin moving more and thus usually maintain a greater average separation. Materials which contract with increasing temperature are [...]
2018-06-28meta-author
3-7. ID Correct and Major Wafer Flat
Both should be readily discernible.
2018-06-28meta-author
5-4-1 Historical Lack of SiC Wafers
Reproducible wafers of reasonable consistency, size, quality, and availability are a prerequisite for
commercial mass production of semiconductor electronics. Many semiconductor materials can be melted
and reproducibly recrystallized into large single crystals with the aid of a seed crystal, such as [...]
2018-06-28meta-author