2-34.Chemical Mechanical Polishing
Chemical Mechanical Polishing/Planarization is short as CMP, a process of smoothing surfaces with the combination of chemical and mechanical forces. It can be thought of as a hybrid of chemical etching and free abrasive polishing.
2018-06-28meta-author
3-2. Scratches
Grooves or cuts below the surface plane of the wafer having a length-to-width ratio of greater than 5 to 1. Scratches are speci ed by the number of discrete scratches times the total length in fractional diameter.
2018-06-28meta-author
2-4.Wafer Surface Orientation
Denotes the orientation of the surface of a wafer with respect to a crystallographic plane within the lattice structure.
In wafers cut intentionally “off orientation”, the direction of cut is parallel to the primary at, away from the secondary at.
Measured with [...]
2018-06-28meta-author
2-21.Usable Area
A cumulative subtraction of all noted defect areas from the frontside wafer quality area within the edge exclusion zone. The remaining percent value indicates the proportion of the frontside surface to be free of all noted defects (does not include edge exclusion).
2018-06-28meta-author
2-15.Orange Peel
Visually detectable surface roughening when viewed under diffuse illumination.
2018-06-28meta-author
2-24.Wafer Orientation
Wafers are grown from crystal having a regular crystal structure, with silicon having a diamond cubic structure with a lattice spacing of 5.430710 Å (0.5430710 nm).When cut into wafers, the surface is aligned in one of several relative directions known as crystal orientations. [...]
2018-06-28meta-author