3-6. Edge Chips
Areas where material has been unintentionally removed from the wafer.Do not confuse fractures in epi crown with edge chips.
2018-06-28meta-author
5-2-1-2 Electrical Properties
Owing to the differing arrangement of Si and C atoms within the SiC crystal lattice, each SiC polytype
exhibits unique fundamental electrical and optical properties. Some of the more important semiconductor
electrical properties of the 3C, 4H, and 6H SiC polytypes are given in [...]
2018-06-28meta-author
5-2-2-1 SiC Crystallography: Important Polytypes and Definitions
Silicon carbide occurs in many different crystal structures, called polytypes. A more comprehensive
introduction to SiC crystallography and polytypism can be found in Reference 9. Despite the fact that
all SiC polytypes chemically consist of 50% carbon atoms covalently bonded [...]
2018-06-28meta-author
2-27.BOW
Bow is the deviation of the center point of the median surface of a free, un-clamped wafer from the median surface to the reference plane. Where the reference plane is defined by three corners of equilateral triangle. This definition is based on now obsolete [...]
2018-06-28meta-author
2-10.Cracks
A fracture or cleavage of the wafer that extends from the frontside surface of the wafer to the back-side surface of the wafer. Cracks must exceed 0.010” in length under high intensity illumination in order to discriminate fracture lines from allowable crystalline striations. Fracture [...]
2018-06-28meta-author
5-2-1-1 SiC Crystallography
Silicon carbide occurs in many different crystal structures, called polytypes. Despite the fact that all SiC polytypes chemically consist of 50% carbon atoms covalently bonded with 50% silicon atoms, each SiC polytype has its own distinct set of electrical semiconductor properties. While [...]
2018-06-28meta-author
