2-34.Chemical Mechanical Polishing
Chemical Mechanical Polishing/Planarization is short as CMP, a process of smoothing surfaces with the combination of chemical and mechanical forces. It can be thought of as a hybrid of chemical etching and free abrasive polishing.
5-4-1 Historical Lack of SiC Wafers Reproducible wafers of reasonable consistency, size, quality, and availability are a prerequisite for commercial mass production of semiconductor electronics. Many semiconductor materials can be melted and reproducibly recrystallized into large single crystals with the aid of a seed crystal, such as [...]
5-3-1 High-Temperature Device Operation The wide bandgap energy and low intrinsic carrier concentration of SiC allow SiC to maintain semiconductor behavior at much higher temperatures than silicon, which in turn permits SiC semiconductor device functionality at much higher temperatures than silicon . As discussed in basic semiconductor electronic [...]
5-5-3 SiC Contacts and Interconnect All useful semiconductor electronics require conductive signal paths in and out of each device as well as conductive interconnects to carry signals between devices on the same chip and to external circuit elements that reside off-chip. While SiC itself is theoretically capable [...]
2-29.Resistivity The resistance to current flow and movement of electron and hole carries in the silicon carbide. Resistivity is related to the ratio of voltage across the silicon to the current flowing through the silicon carbide per unit volume of silicon carbide. The units for [...]
2-14.Masking Defects also referred to as “Mound” When one defect prevents the detection of another defect, the undetected defect is called the masked defect. A distinct raised area above the wafer frontside surface as viewed with diffuse illumination.
2-26.TTV Total Thickness Variation (TTV): The maximum variation in the wafer thickness. Total Thickness Variation is generally determined by measuring the wafer in 5 locations of a cross pattern (not too close to the wafer edge) and calculating the maximum measured difference in thickness.
