2-25.FWHM
Full width at half maximum (FWHM) is an expression of the extent of a function, given by the difference between the two extreme values of the independent variable at which the dependent variable is equal to half of its maximum value.

2018-06-28meta-author

2-29.Resistivity
The resistance to current flow and movement of electron and hole carries in the silicon carbide. Resistivity is related to the ratio of voltage across the silicon to the current flowing through the silicon carbide per unit volume of silicon carbide. The units for [...]

2018-06-28meta-author

2-3.Wafer Flat Length
Linear dimension of the at measured with ANSI certied digital calipers on a sample of one wafer per ingot.

2018-06-28meta-author

5-4-3 Growth of Hexagonal Polytype SiC Wafers
In the late 1970s, Tairov and Tzvetkov established the basic principles of a modified seeded sublimation growth process for growth of 6H-SiC. This process, also referred to as the modified Lely process,was a breakthrough for SiC in that [...]

2018-06-28meta-author

3-4. Step Bunching
Step bunching is visible as a pattern of parallel lines running perpendicular to the major at. If present, estimate the % of speci ed area affected.

2018-06-28meta-author

Most SiC electronic devices are not fabricated directly in sublimation-grown wafers, but are instead fabricated in much higher quality epitaxial SiC layers that are grown on top of the initial sublimation grown wafer. Well-grown SiC epilayers have superior electrical properties and are more controllable [...]

2018-06-28meta-author