2-37.Test Grade
Test Grade: A silicon carbide wafer of lower quality than Prime, and used primarily for testing processes. SEMI indicates the bulk, surface, and physical properties required to label silicon carbide wafers as “Test Wafers”.
2-37.Test Grade
Related Posts
5-5-5 SiC Insulators: Thermal Oxides and MOS Technology
5-5-5 SiC Insulators: Thermal Oxides and MOS Technology The vast majority of semiconductor-integrated circuit chips in use today rely on silicon metal-oxide– semiconductor field-effect transistors (MOSFETs), whose electronic advantages and operational device physics are summarized in Katsumata’s chapter and elsewhere . Given the extreme usefulness and success of [...]
2018-06-28meta-author
5-3-1 High-Temperature Device Operation
5-3-1 High-Temperature Device Operation The wide bandgap energy and low intrinsic carrier concentration of SiC allow SiC to maintain semiconductor behavior at much higher temperatures than silicon, which in turn permits SiC semiconductor device functionality at much higher temperatures than silicon . As discussed in basic semiconductor electronic [...]
2018-06-28meta-author
5-5-2 SiC-Selective Doping: Ion Implantation
5-5-2 SiC-Selective Doping: Ion Implantation The fact that diffusion coefficients of most SiC dopants are negligibly small (at 1800°C) is excellent for maintaining device junction stability, because dopants do not undesirably diffuse as the device is operated long term at high temperatures. Unfortunately, this characteristic also largely [...]
2018-06-28meta-author
2-31.N type
2-31.N type A semiconductor has electrical conductivity between that of a conductor and an insulator. Semiconductors differ from metals in their characteristic property of decreasing electrical resistivity with increasing temperature.Semiconductors can also display properties of passing current more easily in one direction than the other, [...]
2018-06-28meta-author
5-3 Applications and Benefits of SiC Electronics
5-3 Applications and Benefits of SiC Electronics Two of the most beneficial advantages that SiC-based electronics offer are in the areas of high-temperature and high-power device operation. The specific SiC device physics that enables high-temperature and high-power capabilities will be examined first, by several examples of revolutionary [...]
2018-06-28meta-author
5-4-4-3 SiC Epilayer Doping
5-4-4-3 SiC Epilayer Doping In-situ doping during CVD epitaxial growth is primarily accomplished through the introduction of nitrogen (usually) for n-type and aluminum (usually trimethyl- or triethylaluminum) for p-type epilayers . Some alternative dopants such as phosphorus and boron have also been investigated for the [...]
2018-06-28meta-author