5-5-3 SiC Contacts and Interconnect
All useful semiconductor electronics require conductive signal paths in and out of each device as well as
conductive interconnects to carry signals between devices on the same chip and to external circuit
elements that reside off-chip. While SiC itself is theoretically capable [...]
2018-06-28meta-author
3-4. Step Bunching
Step bunching is visible as a pattern of parallel lines running perpendicular to the major at. If present, estimate the % of speci ed area affected.
2018-06-28meta-author
3-12. Silicon Droplets
Silicon droplets can appear as either small mounds or depressions in the wafer surface. Normally absent, but if present are largely concentrated at perimeter of wafer. If present, estimate the % of speci ed area affected.
2018-06-28meta-author
5-4-1 Historical Lack of SiC Wafers
Reproducible wafers of reasonable consistency, size, quality, and availability are a prerequisite for
commercial mass production of semiconductor electronics. Many semiconductor materials can be melted
and reproducibly recrystallized into large single crystals with the aid of a seed crystal, such as [...]
2018-06-28meta-author
2-10.Cracks
A fracture or cleavage of the wafer that extends from the frontside surface of the wafer to the back-side surface of the wafer. Cracks must exceed 0.010” in length under high intensity illumination in order to discriminate fracture lines from allowable crystalline striations. Fracture [...]
2018-06-28meta-author
3-9. Comet Tails
Comet tails have a discrete head and trailing tail. These features are aligned parallel to the major at. Usually, all comet tails tend to be of the same length. Count once per occurrence. Two comet tails within 200 microns count as [...]
2018-06-28meta-author