5-6-5 SiC MicroElectromechanical Systems (MEMS) and Sensors As described in Hesketh’s chapter on micromachining in this book, the development and use of siliconbased MEMS continues to expand. While the previous sections of this chapter have centered on the use of SiC for traditional semiconductor electronic [...]
2018-06-28meta-author
5-6-4-2 SiC High-Power Switching Transistors Three terminal power switches that use small drive signals to control large voltages and currents (i.e., power transistors) are also critical building blocks of high-power conversion circuits. However, as of this writing, SiC high-power switching transistors are not yet commercially [...]
2018-06-28meta-author
5-3-2 High-Power Device Operation The high breakdown field and high thermal conductivity of SiC coupled with high operational junction temperatures theoretically permit extremely high-power densities and efficiencies to be realized in SiC devices. The high breakdown field of SiC relative to silicon enables the blocking voltage region [...]
2018-06-28meta-author
3-1. Large Point Defects Defects which exhibit a clear shape to the unassisted eye and are > 50 microns across. These features include spikes, adherent particles, chips and craters. Large point defects less than 3 mm apart count as one defect.
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SILICON CARBIDE (SiC) materials are currently metamorphosing from research and development into a market driven manufacturing product. SiC substrates are currently used as the base for a large fraction of the world production of green, blue, and ultraviolet light-emitting diodes (LEDs). Emerging markets for [...]
2018-06-28meta-author
2-25.FWHM Full width at half maximum (FWHM) is an expression of the extent of a function, given by the difference between the two extreme values of the independent variable at which the dependent variable is equal to half of its maximum value.
2018-06-28meta-author