2-7.Primary Flat Orientation
The at of the longest length on the wafer, oriented such that the chord is parallel with a specied low index crystal plane. Measured on one wafer per ingot using Laue back-reection technique with manual angle measurement.
1-7.Band-gap In solid state physics, a band gap, also called an energy gap or bandgap, is an energy range in a solid where no electron states can exist. In graphs of the electronic band structure of solids, the band gap generally refers to the energy [...]
2-28.WARP Warp is the difference between the maximum and the minimum distances of the median surface of a free, un-clamped wafer from the reference plane defined above. This definition follows ASTM F657, and ASTM F1390,which deviation from a plane of a slice or wafer centerline [...]
5-5-2 SiC-Selective Doping: Ion Implantation The fact that diffusion coefficients of most SiC dopants are negligibly small (at 1800°C) is excellent for maintaining device junction stability, because dopants do not undesirably diffuse as the device is operated long term at high temperatures. Unfortunately, this characteristic also largely [...]
5-2-1-1 SiC Crystallography Silicon carbide occurs in many different crystal structures, called polytypes. Despite the fact that all SiC polytypes chemically consist of 50% carbon atoms covalently bonded with 50% silicon atoms, each SiC polytype has its own distinct set of electrical semiconductor properties. While [...]
5-6-4-1-1 SiC Schottky Power Rectifiers. 4H-SiC power Schottky diodes (with rated blocking voltages up to 1200 V and rated on-state currents up to 20 A as of this writing) are now commercially available . The basic structure of these unipolar diodes is a patterned metal [...]
5-5-5 SiC Insulators: Thermal Oxides and MOS Technology The vast majority of semiconductor-integrated circuit chips in use today rely on silicon metal-oxide– semiconductor field-effect transistors (MOSFETs), whose electronic advantages and operational device physics are summarized in Katsumata’s chapter and elsewhere . Given the extreme usefulness and success of [...]
