2-8.Secondary Flat Orientation
A at of shorter length than the primary orientation at,whose position with respect to the primary orientation at identies the face of the wafer.
2-8.Secondary Flat Orientation
A at of shorter length than the primary orientation at,whose position with respect to the primary orientation at identies the face of the wafer.
2-25.FWHM Full width at half maximum (FWHM) is an expression of the extent of a function, given by the difference between the two extreme values of the independent variable at which the dependent variable is equal to half of its maximum value.
5-2-2-2 SiC Semiconductor Electrical Properties Owing to the differing arrangement of Si and C atoms within the SiC crystal lattice, each SiC polytype exhibits unique fundamental electrical and optical properties. Some of the more important semiconductor electrical properties of the 3C, 4H, and 6H SiC polytypes are [...]
2-37.Test Grade Test Grade: A silicon carbide wafer of lower quality than Prime, and used primarily for testing processes. SEMI indicates the bulk, surface, and physical properties required to label silicon carbide wafers as “Test Wafers”.
3-6. Edge Chips Areas where material has been unintentionally removed from the wafer.Do not confuse fractures in epi crown with edge chips.
3-11. Particles Particles have the appearance of eyes and if present are usually concentrated at the wafer edges and not within the speci ed area. If present, count once per occurrence.Two particles within 200 microns count as one.
5-6-2 SiC RF Devices The main use of SiC RF devices appears to lie in high-frequency solid-state high-power amplification at frequencies from around 600 MHz (UHF-band) to perhaps as high as a few gigahertz (X-band). As discussed in far greater detail in References 5, 6, [...]