2-8.Secondary Flat Orientation
A at of shorter length than the primary orientation at,whose position with respect to the primary orientation at identies the face of the wafer.
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2-8.Secondary Flat Orientation
A at of shorter length than the primary orientation at,whose position with respect to the primary orientation at identies the face of the wafer.
5-6-4-1-1 SiC Schottky Power Rectifiers. 4H-SiC power Schottky diodes (with rated blocking voltages up to 1200 V and rated on-state currents up to 20 A as of this writing) are now commercially available . The basic structure of these unipolar diodes is a patterned metal [...]
5-5-5 SiC Insulators: Thermal Oxides and MOS Technology The vast majority of semiconductor-integrated circuit chips in use today rely on silicon metal-oxide– semiconductor field-effect transistors (MOSFETs), whose electronic advantages and operational device physics are summarized in Katsumata’s chapter and elsewhere . Given the extreme usefulness and success of [...]
5-6 SiC Electronic Devices and Circuits This section briefly summarizes a variety of SiC electronic device designs broken down by major application areas. SiC process and material technology issues limiting the capabilities of various SiC device topologies are highlighted as key issues to be addressed [...]
2-9.(Area) Wafer Contamination Any foreign matter on the surface in localized areas which is revealed under high intensity (or diffuse) illumination as discolored, mottled, or cloudy appearance resulting from smudges, stains or water spots.
1-2.Stacking Sequence If we are going to make a laminated structure, we must know the thickness of each ply and the angle of each ply traditionally in degrees defined from the top layer down.
3-12. Silicon Droplets Silicon droplets can appear as either small mounds or depressions in the wafer surface. Normally absent, but if present are largely concentrated at perimeter of wafer. If present, estimate the % of speci ed area affected.