2-9.(Area) Wafer Contamination
Any foreign matter on the surface in localized areas which is revealed under high intensity (or diffuse) illumination as discolored, mottled, or cloudy appearance resulting from smudges, stains or water spots.
5-3-1 High-Temperature Device Operation The wide bandgap energy and low intrinsic carrier concentration of SiC allow SiC to maintain semiconductor behavior at much higher temperatures than silicon, which in turn permits SiC semiconductor device functionality at much higher temperatures than silicon . As discussed in basic semiconductor electronic [...]
5-7-1 Future Tied to Material Issues The previous sections of this chapter have already highlighted major known technical obstacles and immaturities that are largely responsible for hindered SiC device capability. In the most general terms, these obstacles boil down to a handful of key fundamental [...]
2-36.Reclaim Grade Reclaim Grade:A lower quality wafer that has been used in manufacturing and then reclaimed , etched or polished, and then used a second time in manufacturing.
2-2.Wafer Thickness, Center Point Thin (thickness depends on wafer diameter, but is typically less than 1mm),circular slice of single-crystal semiconductor material cut from the ingot of single crystal semiconductor; used in manufacturing of semiconductor devices and integrated circuits; wafer diameters may range from 5mm to [...]
5-5-3 SiC Contacts and Interconnect All useful semiconductor electronics require conductive signal paths in and out of each device as well as conductive interconnects to carry signals between devices on the same chip and to external circuit elements that reside off-chip. While SiC itself is theoretically capable [...]
SILICON CARBIDE (SiC) materials are currently metamorphosing from research and development into a market driven manufacturing product. SiC substrates are currently used as the base for a large fraction of the world production of green, blue, and ultraviolet light-emitting diodes (LEDs). Emerging markets for [...]
