2″ Free Standing Gallium Nitride (GaN) Substrate

2″ Free Standing Gallium Nitride (GaN) Substrate

PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production.

GaN have a considerable impact on products of next generation due to high-output power and increase efficiency that improve the performance of laser diodes, light-emitting diodes (LED), high-power transistors and other devices.

For more information, please visit at www.powerwaywafer.com, e-mail: sales@powerwaywafer.com

2012-03-06

PAM XIAMEN offers FZ & MCZ silicon ingot and silicon wafer

PAM XIAMEN offers FZ & MCZ silicon ingot and silicon wafer: Description Growth Method — MCZ Single crystal size inch 2 – 8 Conductivity Type — N P Doped elements — P/Sb B Crystal Orientation — <111> <110> <100> <111> <110> <100> Resistivity Ω.cm 0.0015-100 0.001-100 RRG % 20 20 Oxygen Concentration atoms/cm3 1.00E+18 1.00E+18 Carbon Concentration atoms/cm3 5.00E+16 5.00E+16 Diameter mm 55-157 55-157 Length mm 50-500 50-500 Dislocation EA/cm2 N/A N/A Swirl(After Oxidation) — N/A N/A Remarks：The above parameters can be customized. FAQ about MCZ Silicon Wafers Q：This is just a curiosity, but let me ask about the production method of [...]

2019-02-27meta-author

Studies on Silicon Carbide Epitaxial Technology

With different fabrication process from the traditional ones, SiC power device cannot be directly made on single crystal SiC materials. It’s obligatory to grow high-quality epitaxial materials on the conductive single crystal substrate to produce different devices on the epitaxial layers. SiC usually adopts the PVT method with [...]

2021-02-25meta-author

La3Ga5SiO14 crystals

PAM XIAMEN offers La3Ga5SiO14 crystals. Langasite- La3Ga5SiO14 crystals is a new piezoelecrictric materials with the value of electromechanical coupling coefficient, which is, intermediate between this coefficient of a quartz crystal and that of lithium tantalate. Characteristics\Crystals Quartz, SiO2 Langasite, La3Ga5SiO14 Lithium tetraborate, Li2B2O3 Lithium tantalate, LiTaO3 Electromechanical Coupling Factor [...]

2019-05-07meta-author

PBN crucibles

PAM-XIAMEN offers PBN crucibles PBN crucible (L: 160.3mm) PBN crucible(L160.3mm) PBN crucible (L: 157.5mm) PBN crucible(L157.5mm) For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and [...]

2019-03-13meta-author

PAM-XIAMEN Offers InGaP

Phosphorus-containing III-V compounds are the preferred materials for millimeter-wave and submillimeter-wave devices and circuits, optoelectronic devices, and solar cells. InGaP lattice matched to GaAs has a direct band gap of 1.9eV at room temperature, which is a highly efficient light-emitting material. We are pleased [...]

2017-10-11meta-author

V-shaped defects in InGaN/GaN multiquantum wells

V-shaped defects in InGaN/GaN multiquantum wells InGaN/GaN multiquantum well (MQW) structures have been grown on (0001) sapphire substrate by metalorganic chemical vapor deposition. From cross-sectional transmission electron microscopy (TEM), a number of V-shaped defects has been observed on the surface which are associated with mixed [...]

2014-01-24meta-author InGaN/GaN

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sales@powerwaywafer.com tech@powerwaywafer.com

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2″ Free Standing Gallium Nitride (GaN) Substrate

2″ Free Standing Gallium Nitride (GaN) Substrate

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