PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production.
PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production.
PAM XIAMEN offers LiNbO3 Lithium Niobate Crystal. Lithium niobate is a ferroelectric material with excellent electro-optic, nonlinear, and piezoelectric properties. Lithium niobate crystals are important materials for optical waveguides, mobile phones, piezoelectric sensors, optical modulators and various other linear and non-linear optical applications. Find lithium niobate [...]
PAM XIAMEN offers Silicon Ingots. Material Description FZ 4″Ø×105mm ground ingot, n-type Si:P[111] ±2°, (1-2)Ohmcm FZ 4″Ø×374mm ground ingot, n-type Si:P[111] ±2°, (429.4-453.7)Ohmcm, MCC Lifetime=11,866µs FZ 4″Ø×400mm ground ingot, n-type Si:P[111] (446.9-458.9)Ohmcm, MCC Lifetime=10,670µs FZ 4″Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, MCC Lifetime>1,200μs, Ground, (6 ingots: 294mm, 296mm, 296mm, 294mm, 219mm, 112mm) FZ 4″Ø ingot Intrinsic [...]
PAM XIAMEN offers Pyrolytic Boron Nitride. Performance PBN’s properties, its intrinsic purity, superior mechanical strength, and thermal stability make it a superb choice for high temperature furnace and electrical components; microwave and semiconductor components; and industry standardized crucibles for Gallium Arsenide Crystal production. Good [...]
LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers In this paper we report on the optimization of the MBE growth process for obtaining semi-insulating LT-GaAs layers applied in vertical-cavity surface-emitting-lasers. The technological conditions for growingLT-GaAs layers have been found and test processes for growing the laser structure [...]
PAM XIAMEN offers Aluminum on Silicon Wafer. Aluminum Film on Silicom Wafer , 3 microns / 4″ — Al-Si-100-3um ,Si(100) N-type R:<0.005 ohm.cm Aluminum Film on Silicon Wafer , 3 microns / 4″ — Al-Si-100-3um ,Si(100) N-type R:1-10 ohm.cm Aluminum Film on Silicon Wafer, [...]
GaN template with single side polished and atomic step is available, which is grown on 4H or 6H SiC C-axis (0001) substrate. GaN growth on SiC substrate can achieve lower thermal expansion, lower lattice mismatch, and excellent thermal conductivity, thereby giving full play to [...]
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