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2″ Free Standing Gallium Nitride (GaN) Substrate

2″ Free Standing Gallium Nitride (GaN) Substrate

2″ Free Standing Gallium Nitride (GaN) Substrate

 

PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production.

GaN have a considerable impact on products of next generation due to high-output power and increase efficiency that improve the performance of laser diodes, light-emitting diodes (LED), high-power transistors and other devices.
For more information, please visit at www.powerwaywafer.com, e-mail: [email protected]

 

2017-03-06

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