1 – Materials and manufacturing techniques for silicon-on-insulator (SOI) wafer technology
This chapter reviews various processes for manufacturing SOI wafers. There is a specific focus on Separation by IMplantation of OXygen (SIMOX) and on technologies based on direct bonding (bonded silicon-on-insulator (BSOI), epitaxial layer transfer process (Eltran®), [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InP substrate and other related products and services, can offer InP substrate for Fiber optics network components. Our monocrystalline InP crystal substrate has excellent properties, a series of doping experiments have determined the effective segregation coefficient [...]
2017-08-18meta-author
PAM XIAMEN offers 6″ FZ Silicon Wafer with Diameter 150mm, Both Side Etched
Silicon wafers, per SEMI Prime, E/E
6″ (150.0±0.2mm)Ø×400±25µm,
FZ n-type Si:P[100]±0.5°,
Ro=(1-5)Ohmcm,
Carbon<2E16 /cm³, Oxygen<2E16 /cm³,
TTV<12µm, Bow<40µm, Warp<50µm,
Bothsidesetched, One SEMI Flat (57.5mm),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs.
For more information, send us email at [email protected] and [email protected]
2020-06-10meta-author
PAM XIAMEN offers 3″ Silicon Wafer-21
Si wafer
Orientation: (111) ± 0.5°
Type: p-type
Dopant: B
Diameter: 76.2 ± 0.3 mm
Thickness: 380 ± 25 um
Disorientation: 2° to <11-2>
Resistivity: < 0.002 Ohm*cm
Single side polished
C Boron > E20 atom/cm3
Oi < 1E18 atom/cm3
[...]
2020-03-18meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
SSP
Red Phos.
N+
100
47,5 ± 2,5
01T ± 0,50
0.0 ± 0.5°
0.015 – 0.035 Ohmcm
150 ± 0.5 mm
400 ± 15 µm
40
5
40
6
SSP
Red Phos.
N+
100
47,5 ± 2,5
01T ± 0,50
0.0 ± 0.5°
0.015 [...]
2019-02-25meta-author
PAM XIAMEN offers PbTe Single Crystal, Lead Telluride Crystal.(Not sell it temporarily)
Technical specifications:
Melting point: 924°C (1,695 °F; 1,197 K)
Lattice constant: a = 6.46 Angstroms
Solubility in water: insoluble
Band gap: 0.25 eV (0 K)
0.32 eV (300 K)
Electron Mobility: 1600 cm2 V−1 s−1 (0 K)
6000 cm2 V−1 s−1 (300 K)
Crystal structure: Halite (cubic)
Available sizes: 10 x 10 x1 mm, 5x5x1 mm, 20 x 10x 1mm.
Customization [...]
2019-03-14meta-author