2″ FZ Intrinsic Si Wafer SSP
2″ FZ (100) intrinsic, SSP
wafer Si FZ (100)
dia 2’’ x 280µm
intrinsic
R > 20,000 ohm.cm
one side polished with SEMI Std flats
Roughness<0.5nm
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers YIG single crystal substrate. YIG single crystal substrate, one side polished, (111), 5 mm dia. x 0.5 mm YIG single crystal substrate, two sides polished, (111), 5 mm dia. x 0.35 mm For more information, please visit our website: https://www.powerwaywafer.com, send [...]
PAM-XIAMEN’ product line includes single-sided polishing (SSP) and double-sided polishing (DSP) wafer substrate or called mirror polished wafer for applications of semiconductors, MEMS, and other chips that require a strictly controlled flatness often require double-sided polishing chips. They are also necessary for a two-sided [...]
Today, among the existing semiconductor materials, diamond is one of the most promising semiconductor materials. Usually, it is used as diamond thermal management material. The article will mainly discuss the diamond from 3 parts: what is diamond, diamond material properties and its applications. 1. What Is Diamond? Diamond [...]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title:Multisite microLED optrode array for neural interfacing Published by: Niall McAlinden; Yunzhou Cheng; Robert Scharf; Enyuan Xie; Erdan Gu; Christopher F. Reiche; [...]
Highlights •GaSb p–i–n diodes were grown on Si and GaAs using interfacial misfit (IMF) arrays. •Transmission electron microscopy images revealed arrays of 90° misfit dislocations. •Threading dislocation densities of around View the MathML source were found in each case. •Lower dark currents and higher quantum efficiency was found [...]
PAM XIAMEN offers 3″ Silicon Wafer-18 Si wafer Orientation: (100) ± 0.5° Type: n-type Dopant: P Diameter: 76.2 ± 0.3 mm Thickness: 380 ± 25 um Disorientation: 4° to <110> Resistivity: < 0.005 Ohm*cm single side polished For more information, send us email at [email protected] and [email protected]
