2″ FZ Intrinsic Si Wafer SSP
2″ FZ (100) intrinsic, SSP
wafer Si FZ (100)
dia 2’’ x 280µm
intrinsic
R > 20,000 ohm.cm
one side polished with SEMI Std flats
Roughness<0.5nm
For more information, send us email at [email protected] and [email protected]
1 – Materials and manufacturing techniques for silicon-on-insulator (SOI) wafer technology This chapter reviews various processes for manufacturing SOI wafers. There is a specific focus on Separation by IMplantation of OXygen (SIMOX) and on technologies based on direct bonding (bonded silicon-on-insulator (BSOI), epitaxial layer transfer process (Eltran®), [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InP substrate and other related products and services, can offer InP substrate for Fiber optics network components. Our monocrystalline InP crystal substrate has excellent properties, a series of doping experiments have determined the effective segregation coefficient [...]
PAM XIAMEN offers 6″ FZ Silicon Wafer with Diameter 150mm, Both Side Etched Silicon wafers, per SEMI Prime, E/E 6″ (150.0±0.2mm)Ø×400±25µm, FZ n-type Si:P[100]±0.5°, Ro=(1-5)Ohmcm, Carbon<2E16 /cm³, Oxygen<2E16 /cm³, TTV<12µm, Bow<40µm, Warp<50µm, Bothsidesetched, One SEMI Flat (57.5mm), Sealed in Empak or equivalent cassette, MCC Lifetime>1000µs. For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 3″ Silicon Wafer-21 Si wafer Orientation: (111) ± 0.5° Type: p-type Dopant: B Diameter: 76.2 ± 0.3 mm Thickness: 380 ± 25 um Disorientation: 2° to <11-2> Resistivity: < 0.002 Ohm*cm Single side polished C Boron > E20 atom/cm3 Oi < 1E18 atom/cm3 [...]
PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 6 SSP Red Phos. N+ 100 47,5 ± 2,5 01T ± 0,50 0.0 ± 0.5° 0.015 – 0.035 Ohmcm 150 ± 0.5 mm 400 ± 15 µm 40 5 40 6 SSP Red Phos. N+ 100 47,5 ± 2,5 01T ± 0,50 0.0 ± 0.5° 0.015 [...]
PAM XIAMEN offers PbTe Single Crystal, Lead Telluride Crystal.(Not sell it temporarily) Technical specifications: Melting point: 924°C (1,695 °F; 1,197 K) Lattice constant: a = 6.46 Angstroms Solubility in water: insoluble Band gap: 0.25 eV (0 K) 0.32 eV (300 K) Electron Mobility: 1600 cm2 V−1 s−1 (0 K) 6000 cm2 V−1 s−1 (300 K) Crystal structure: Halite (cubic) Available sizes: 10 x 10 x1 mm, 5x5x1 mm, 20 x 10x 1mm. Customization [...]
