Low temperature grown (LTG) gallium arsenide (GaAs) thin-film on GaAs substrate is available for photodetctors and photomixers. In addition, we can supply gaas epi wafer, for more GaAs thin film wafer please view https://www.powerwaywafer.com/gaas-wafers/gaas-epiwafer.html. LTG-GaAs is GaAs grown at a low temperature of 250-300 [...]
2022-08-12meta-author
PAM-XIAMEN can offer 850nm and 940nm infrared LED wafer by MOCVD. 850nm and 940nm infrared LED refers to the infrared wavelength with the peak value of 850nm or 940nm, but there is also a small amount of light in the visible light area, so it [...]
2020-05-14meta-author
PAM XIAMEN offers Single crystal TeO2.
TeO2 (110) 10x10x0.5mm, 1sp
TeO2 (001) 5x5x0.3mm, 2sp
TeO2 (110) 10x10x0.5mm, 2sp
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
2019-05-20meta-author
PAM XIAMEN offers 4″ FZ Prime Silicon Wafer Thickness: 400µm +/-25µm.
1. Specification of Prime Silicon Wafer by FZ
PRIME WAFERS SILICIUM FZ
DIAMETER 4’’ (100mm+/-0.5mm)
ORIENTATION <1-0-0> +/-1°
THICKNESS : 400µm +/-25µm
DSP
TTV < 10µm – BOW < 40µm
FLAT : 32.5mm
TYPE [...]
2019-07-04meta-author
GaAs MESFET, HEMT and HBT Competition with Advanced Si RF Technologies
TECHNOLOGIES
The competing technologies on the RF market will be briefly described. The given key figures are oriented to production processes and are no records that are in principle feasible in the technology.
The MESFET (fig. [...]
AlGaN is a direct wide band gap semiconductor material. By changing the composition of AlGaN material, the band gap size can be continuously adjusted from 3.39 eV to 6.1 eV, covering the UV band range from 210 nm to 360 nm, so it is [...]
2022-10-14meta-author