PAM XIAMEN offers SBN crystal.
Strontium-Barium Niobate (SrxBa(1-x)Nb2O6) SBN crystal is an excellent optical and photorefractive material due to its excellent photorefractive, electro-optic, nonlinear optic, and dielectric properties. SBN crystal has a very large electro-optic coefficient up to 1400 pm/V. and is potential crystal [...]
2019-05-15meta-author
PAM-XIAMEN offers (10-11) Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN(10-11)-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(10-11) plane off angle toward A-axis 0 ±0.5°
(10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
PAM XIAMEN offers 4″ FZ Prime Silicon Wafer-7
4″ FZ Si wafer
N type
Orientation (100)
Thickness 500±15μm
Resistitvity>2000Ωcm
DSP
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to [...]
2019-10-18meta-author
The silicon carbide crystal most commonly used as a semiconductor material is 4H-SiC wafer. However, silicon carbide crystals have multiple types. Once the conditions are not well controlled in the process of the silicon carbide crystal growth, the resulting silicon carbide crystal structure may be 3C, 6H, 15R, etc., [...]
2021-04-08meta-author
PAM XIAMEN offers Magnesium Fluoride MgF2 Crystal.
Magnesium fluoride, MgF2, crystals have been widely used as windows, lenses, and prisms for wavelength from 110 nm to 7.5 um. It is the most suitable material for ArF excimer lasers used in pulsed laser deposition techniques. For its excellent ulta-violet transmittance [...]
2019-03-14meta-author
PAM XIAMEN offers 6″ Monocrystalline silicon wafers with insulating oxide
6″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 [...]
2020-04-15meta-author