The SiC substrate and SiC homoepitaxy from PAM-XIAMEN can be provided for the fabrication of MOSFET devices. Silicon carbide (SiC) MOSFET structure is mainly manufactured by imitating the process of Si MOSFET structure. In terms of configuration, MOSFET structures are generally divided into two [...]
2022-04-11meta-author
PAM XIAMEN offers 4″FZ Prime Silicon Wafer Thickness: 400µm +/-25µm.
PRIME WAFERS SILICIUM FZ
DIAMETER 4’’ (100mm+/-0.5mm)
ORIENTATION <1-0-0> +/-1°
THICKNESS : 400µm +/-25µm
DSP
TTV < 10µm – BOW < 40µm
FLAT : 32.5mm
TYPE P
RESISTIVITY : 5000 – 10000 Ohm.cm
WITH [...]
2019-07-05meta-author
The most basic and key parameters of SiC epitaxial materials are the thickness and doping concentration uniformity.In fact, the epitaxial parameters mainly depend on the device design. For example, the epitaxial parameters are different according to the different voltage levels of the devices. Generally, [...]
2020-09-22meta-author
Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy
GaN freestanding substrate was obtained by hydride vapor phase epitaxy directly on sapphire with porous network interlayer. The morphologies of Ga-face and N-face of freestanding GaN substrate were analyzed [...]
Calcium fluoride crystal thin film of PAM-XIAMEN is provided with high band gap, high dielectric constant and high dielectric strength, which is an ideal dielectric material for preventing leakage current effectively. CaF2 is calcium fluoride chemical formula. The evaporation temperature of CaF2 in a [...]
2019-04-17meta-author
PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm.
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity>30000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-07-03meta-author