Silicon, 2″ Intrinsic
Orientation <100>,
Resistivity >10,000Ωcm,
Thickness 280±10um, DSP,
TTV<5um, Bow/Warp<30um,
2 SEMI Flats, Prime Grade,
Particle @0.3µm, <20 count
Good surface quality for Thermal Oxide growth
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
A Glance of GaAs Wafer Market According to Mamms Consulting, as one of the most mature compound semiconductors, GaAs is everywhere, and it has become the cornerstone of power amplifiers in every smart phone! In 2018, the GaAs RF business is expected to account for [...]
PAM XIAMEN offers (112) Orientation Silicon Wafers. If you don’t see what you need then please email us your specs. Item Type/Dopant Ori Dia (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM3026 n-type Si:P [112-5.0° towards[11-1]] ±0.5° 6″ 875 ±10 E/E FZ >3,000 SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips PAM3027 n-type Si:P [112-5° towards[11-1]] ±0.5° 6″ 1,000 ±10 C/C FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, [...]
PAM XIAMEN offers Nickel Single crystal. tomic number: 28 Atomic number: 28 Atomic mass: 58.71 g.mol -1 Atomic mass: 58.71 g.mol -1 Crystal structure: F.C.C Crystal structure: F.C.C Lattice Constant: 0.325 nm Lattice Constant: 0.325 nm Ni Single crystal Ni Single Crystal Substrate, <100>, 10 x 5 x 0.5 mm, 1 side polished Ni Single Crystal Substrate, <100>, 10×10 x [...]
Product Specifications PAM XIAMEN offers LED Epiwafer. GaN on Al2O3-2” epi wafer Specification White： 445～460 nm Blue： 465～475 nm Green：510～530 nm 1. Growth Technique – MOCVD 2.Diameter: 50.8mm 3.Substrate material: Patterned Sapphire Substrate(Al2O3) 4.Pattern size: 3X2X1.5μm 5.Structure: Structure layers Thickness(μm) p-GaN 0.2 p-AlGaN 0.03 InGaN/GaN(active area) 0.2 n-GaN 2.5 u- GaN 2 Al2O3 (Substrate) 430 6.Parameters to make chips: Item Color Chip Size Characteristics Application PAM1023A0 Blue 10mil x 23mil Vf = 2.8~3.4V Po = 18~25mW Wd = 450~460nm Lighting LCD backlight Mobile [...]
Silicon Carbide Circuits on the Way Although silicon is the semiconducting material of choice in the majority of applications in electronics, its performance is poor where large currents at high voltages have to be controlled. For about 50 years, scientists have been eyeing silicon carbide [...]
PAM XIAMEN offers high-quality Al2O3 (Sapphire). A-plane (11-20) Al2O3 – Sapphire Wafer 5x5x0.5 mm, A plane (11-20), 2 SP Al2O3 – Sapphire Wafer 5x5x0.5 mm, A plane (11-20),1 SP Al2O3 – Sapphire Wafer 10x5x0.5 mm , A plane (11-20), 1 SP Al2O3 – [...]
