Silicon, 2″ Intrinsic
Orientation <100>,
Resistivity >10,000Ωcm,
Thickness 280±10um, DSP,
TTV<5um, Bow/Warp<30um,
2 SEMI Flats, Prime Grade,
Particle @0.3µm, <20 count
Good surface quality for Thermal Oxide growth
For more information, send us email at [email protected] and [email protected]
PAM-XIAMEN, an epi-provider for GaN LED on Si, can offer high performance blue and green light-emitting diode prototypes that grow 2”, 4”, 6” and 8” gallium nitride (GaN) layers based on LED wafer structure on silicon substrate as well as sapphire substrates. Silicon is a low-cost compared with sapphire substrates, [...]
PAM XIAMEN offers Mo – Molybdenum Substrates (polycrystalline). General Properties for Molybdenum Symbol Mo Atomic Number 42 Atomic Weight: 95.96 g/mol Crystal structure: BCC Lattice constant at room temperature : 0.315 nm Density: 10.28 g/cm3 Melting Point: 2623 °C Boiling Point: 4639 °C Mo Polycrystalline Substrate: [...]
PAM-02A is an amplifier which used for shaping and amplifying signals comes from scintillation detector, proportional counter and semiconductor detector. PAM-02A integrates amplifier circuit and SK shaping circuit. With ordered cable, it can direct pulse signal which comes from amplifier into multi-channel pulse analyzer. 1. [...]
PAM-XIAMEN offers (10-11) Plane N-GaN Freestanding GaN Substrate: Item PAM-FS-GAN(10-11)-N Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Si Doped Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]
PAM XIAMEN offers Undoped Silicon Wafers. Please send us email at [email protected] if you need other specs and quantity. Item Dia Dopant Ori Res (Ohm-cm) Thick (um) Polish Grade Description PAM3189 25.4mm Undoped <111> >2000 280um SSP Test Intrinsic FZ PAM3190 25.4mm Undoped <100> >5000 73.5um DSP Prime FZ, Float Zone PAM3191 50.8mm Undoped <100> >10000 280um DSP Prime FZ, Intrinsic item PAM3192 50.8mm Undoped <100> >10000 500um SSP Test Float Zone, Undoped PAM3193 76.2mm Undoped <100> >5000 Ohm-cm 350um DSP MECH NON-REFUNDABLE, POOR QUALITY. Sold “As-Is”; wafers are covered in streaks, residue, and particles. PAM3194 100mm Undoped <100> >20,000 500um SSP Prime Intrinsic, Secondary flat SEMI, TTV<10 [...]
Highlights •Nanoscale defects in III–V materials, grown over Si were characterized with CAFM. •The defects exhibit higher conductivity. •The contact rectifying feature is hide by a larger current under the reverse bias. •Patterned samples fabricated using Aspect Ratio Trapping were also characterized. Abstract The implementation of high mobility devices requires [...]
