PAM-XIAMEN can offer UV LED epi wafer, which is grown by our MOCVD range from 275nm to 405nm. Ultraviolet electromagnetic radiation, commonly known as UV, is used in many industries and applications. The emerging UV LED will be a competitive technology that can drive new innovative applications. UV-LED has [...]
2018-08-15meta-author
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).
PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.
<=1″ diameter wafers [...]
2019-05-15meta-author
PAM-XIAMEN offers (20-21) Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN(20-21)-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
This letter describes the heteroepitaxy of InP on Si by MOCVD. A new epitaxial structure with a thin GaAs intermediate layer (InP/GaAs/Si) is proposed to alleviate the large lattice mismatch (8.4%) between InP and Si. Using this structure, a 4-inch InP single crystal with [...]
2019-08-19meta-author
PAM XIAMEN offers Conductive Ceramic Substrates.
8% YSZ Ceramic Substrate 100x100x0.25 mm, fine ground
8% YSZ Ceramic Substrate 2″x 2″x0.5 mm, one side polished
Conductive Ceramic Target (1″ Dx 0.3 mm t )
Conductive Ceramic Separator Sheets w/ optional size for Li-Air & Solid [...]
2019-04-18meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
Intrinsic Si:-
[100]
4″
500
P/E
FZ 13,000-20,000
SEMI Prime, TTV<5μm, Front-side Prime polish, Back-side light polish
Intrinsic Si:-
[100]
4″
615 ±10
C/C
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
4″
800
C/C
FZ >10,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
525
P/E
FZ >22,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
300
P/E
FZ 20,000-40,000
SEMI, TTV<5μm
Intrinsic Si:-
[111] ±0.5°
4″
450
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
500
P/E
FZ >20,000
SEMI Prime, Extra 3 free non-prime wafers included with 4 prime wafers
Intrinsic Si:-
[111] ±1.0°
4″
500
P/P
FZ >15,000
SEMI Prime, TTV<5μm
p-type Si:B
[110] ±0.25°
4″
525
P/E
5-10
SEMI [...]
2019-03-05meta-author