PAM XIAMEN offers4″ Silicon EPI Wafer-6
4″ Si epi wafer
Structure:
(Top layer intrinsic Si / Middle layer Phosphorus Doped / Ion Implantation / Si substrate)
Top layer intrinsic Si:
Resistivity≥50Ωcm,
Thickness 5μm,
Residual carrier concentration<1×1014/cm3
Middle layer Phosphorus Doped:
Resistivity around 0.025Ωcm (Phosphorous concentration 7×017/cm3),
Thickness 20μm,
Residual carrier concentration<2.1×1013/cm3
Layer with Ion Implantation: handled [...]
2019-11-01meta-author
PAM-02A2 series detectors are super small sized detectors based on planar CZT. They can detect α-ray, γ-ray and β-ray simultaneously.
PAM-02A2 integrates CZT crystal, low noise charge preamplifier circuit, SK shaping circuit and high-voltage circuit. With ordered cable, it can output Quasi-gaussian signal or [...]
2019-04-23meta-author
Equipment Shortages Pushes Back Sharp’s OLED Production
Sharp might be adjusting its OLED panel production plan, and move the production plant in Taiwan to a joint venture factory with Foxconn in Japan, reported Nikkei Asian Review.
The joint venture with Foxconn is a 10th generation display [...]
2016-08-30meta-author
PAM XIAMEN offers LD Bare Bar for [email protected] 4mm.
Brand: PAM-XIAMEN
Wavelength: 940nm
Filling Factor: 38%
Output Power: 250W
Cavity Length:4mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
PAM XIAMEN offers 6″FZ Silicon Wafer.
Silicon wafers, per SEMI Prime,
P/E 6″ {150.0±0.5mm}Ø×1,000±25µm,
FZ p-type Si:B[111]±0.5°, Ro > 5,000 Ohmcm,
One-side-polished, Particles: <[email protected]≥0.3µm,
back-side etched, One SEMI Flat (57.5mm), Edges: rounded,
Sealed in Empak or equivalent cassette,
BOW<30µm, MCCLifetime>1000µs.
For more information, please [...]
2019-08-22meta-author
Gallium arsenide single crystal growth method of PAM-XIAMEN products is liquid-sealed straight pull method (LEC), vertical Bridgman method (VB), or vertical gradient solidification (VGF), which are current mainstream industrial growth methods. Here is a brief introduction for the GaAs single crystal growth method.
1. LEC for Gallium [...]
2021-06-22meta-author