PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.
Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20meta-author
PAM XIAMEN offers LiNbO3 Crystal.
LiNbO3 Crystal has unique electro-optical, piezoelectric, photoelastic and nonlinear optical properties. They are strongly birefringent. They are used in laserfrequency doubling, nonlinear optics, Pockels cells, optical parametric oscillators, Q-switching devices for lasers, other acousto-opticdevices, optical switches for gigahertz frequencies, [...]
2019-05-07meta-author
PAM XIAMEN offers CaF2.
CaF2, (100), 10x10x 0.5 mm 2 Sides polished
CaF2, (100), 10x10x 0.5 mm 1 Side polished
CaF2, (100), 10x10x 1.0mm , 1 Side polished
CaF2, (100), 10x10x 1.0mm , 2 Side polished
CaF2, (111), 10x10x 0.5mm , 2 Side polished [...]
2019-04-17meta-author
PAM-128 is a test system based on CZT photon counting array detector. It integrates four multi-pixel photon counting module and a thermal control system. The energy it can test ranges from 20~160KeV. Its testing resolution is 1.5lp/mm. And it support multi-energy-region test. It can [...]
2019-04-24meta-author
PAM XIAMEN offers 8″ FZ Prime Silicon Wafer.
8″ 200+/-0.2 mm
Double Side Polished
Prime FZ N type
resistivity 8000-14000Ωcm
orientation 100 ±0.5°
Thickness 625 +/- 5µm
Laser Mark None or SEMI
edge profile SEMI
Notch SEMI
Oi content 11-15 PPMA
warp 35
Bow [...]
2019-06-28meta-author
Impact of GaN buffer growth conditions on photoluminescence and X-ray diffraction characteristics of MOVPE grown bulk GaN
Properties of metalorganic vapor phase epitaxy (MOVPE) grown GaN bulk layers with varying GaN buffer growth conditions are characterized by low-temperature (6K) photoluminescence (LT-PL) and X-ray diffraction (XRD). [...]
2013-05-09meta-author
