2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns-2

2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns-2

PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns.

Wafers 2 inches in diameter of monocrystalline silicon with an insulating oxide.
2 inches in diameter
The silicon substrate
The insulating thermal oxidation film thickness 300nm
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 microns

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

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