PAM XIAMEN offers GaP Substrates (111) .
GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp
GaP Wafer, Undoped (111) 10x10x0.5 mm, 2sp
GaP Wafer, S doped (111) 2″x0.5 mm, 2sp
GaP wafer, S doped, (111) orientation, 2″ dia x 0.5mm, 1sp
GaP Wafer, undoped (111) [...]
2019-04-22meta-author
PAM XIAMEN offers BARIUM FLUORIDE BAF2 CRYSTAL.
To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.
Barium fluoride, BaF2, crystal has good transmittance over a wide spectrum range, from 150 nm to 12.5 um. It has been widely used [...]
2019-03-11meta-author
PAM XIAMEN offers Ceramic ALN SUBSTRATE.
100X100 Thickness 0.5±0.03mm
Item
Unit
Value
Test Standard
1）Colour
—-
Gray
3.2
2）Density
g/cm³
≥3.33
GB/T 2413
3）Thermal Conductivity
20℃，W/(m·K)
≥170
GB/T 5598
4）Dielectric Constant
1MHz
8~10
GB/T 5594.4
5）Dielectric Strength
KV/mm
≥17
GB/T 5593
6）Flexural Strength
MPa
≥450
GB/T 5593
7）Camber
Length‰
≤2‰
8）Surface roughness Ra
μm
0.3~0.6
GB/T 6062
9）Water absorption
%
0
GB/T 3299-1996
10)Volume resistivity
20℃，Ω.cm
≥1013
GB/T 5594.5
11）Thermal expansivity
10-6/℃
20~300℃
2~3
GB/T5593
300~800℃
2.5~3.5
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen [...]
2019-07-03meta-author
Military and civil authorities could benefit from secure optical communication systems that use light to carry messages between moving vehicles. Researchers at KAUST have now demonstrated rapid data transfer using ultraviolet-B (UV-B) light, which provides many advantages over visible light.
Optical communications systems using visible [...]
2018-01-05meta-author
PAM XIAMEN offers 80+1mm FZ Si Ingot-5
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
2020-04-17meta-author
With different fabrication process from the traditional ones, SiC power device cannot be directly made on single crystal SiC materials. It’s obligatory to grow high-quality epitaxial materials on the conductive single crystal substrate to produce different devices on the epitaxial layers.
SiC usually adopts the PVT method with [...]
2021-02-25meta-author
