Highlights
•Effects of atomic step width on the removal of sapphire and SiC wafers are studied.
•The reason of effects of step width on the removal and the model are discussed.
•CMP removal model of hexagonal wafer to obtain atomically smooth surface is proposed.
•The variations of atomic [...]
2015-10-28meta-author
PAM XIAMEN offers Si+SiO2+Ti(TiO2)+Pt (Poly or single crystalline)Thin Film, specifications are as follows:
1. Specifications of Coated Silicon Wafer
Si+SiO2 +Ti( or TiO2)+Pt (111) Highly Oriented Polycrystal
SiO2+Ti+Pt (111) thin film on Si substrate, 5x5x0.525mm, 1sp, P-type, B-doped, (SiO2=300nm, Ti=10nm, Pt(111)=150nm)
SiO2+Ti+Pt(111) thin film on Si substrate [...]
2019-04-29meta-author
PAM XIAMEN offers BaSrTiO3 Film on substrate.
BaSrTiO3 Film ( 400nm) on Nb.SrTiO3(wt 0.7%), 10x10x0.5mm,1sp
Ba1-xSrxTiO3 is an excellent enhanced dielectronic film grown on Nb doped SrTiO3 conductive substrate via special spin coating:
Film Sppecifications:
Chemical composition: BaSrTiO3
Film thickness: ~ 400 nm
Crystalline: Polycrystal
Growth [...]
2019-04-26meta-author
PAM XIAMEN offers BK7 Glass for Precision Lenses.
Below are just some of the BK7 Glass Windows.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Dia (mm)
Thick (μm)
Pol
Qty in Stock
PAM3334
76.2
500
DSP
100
PAM3335
100
500
DSP
100
PAM3336
150
500
DSP
100
Following image shows the transmission spectrum of BK7 glass substrate:
For more information, please [...]
2019-02-27meta-author
This paper presents the experimentally obtained gauge factor (GF) of 4H-SiC piezoresistors, fabricated out of the n-type epitaxial layer and characterized on millimeter-size SiC cantilever beams at room temperature. It was found that the GF is dependent on the piezoresistor’s length and width. Piezoresistors [...]
2018-01-18meta-author
Free-Standing & Bulk GaN Substrates for Laser Diode, LED and Power Electronics
LED applications will become the driving force of the bulk GaN market, surpassing established laser diode (LD) and emerging power electronics segments. However, major changes could occur if 4″ bulk GaN price gets [...]
2013-11-22meta-author