2″ Silicon Oxide Wafer

PAM XIAMEN offers 2″ Silicon Oxide Wafer

2″ Silicon Oxide Wafer
Diameter (mm): 50mm
Grade: Prime
Growth: CZ
Type/Dopant: any
Orientation: 100
Resistivity (Ohm-cm): any
Thickness (µm): 500±25μm
Tolerance (µm): any
Surface Finish: SSP
Flats: SEMI-Std.
TTV < (µm): any
Bow < (µm): any
Warp < (µm): any
Particles < (µm): any
Laser Mark String: None
SiO2 Layer (nm): 100nm and 200nm
SiN Layer (nm): None
Other Layer: None

For more information, send us email at [email protected] and [email protected]

2020-04-24

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Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP We review the main structural characteristics of low temperature molecular beam epitaxially produced GaAs (LT-GaAs), LT-InAlAs, and LT-InP. These materials exhibit almost identical behaviours with respect to growth and annealing conditions. For too low growth temperatures [...]

2014-01-02meta-author LT-GaAs

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2019-05-14meta-author

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[email protected] [email protected]

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2″ Silicon Oxide Wafer

2″ Silicon Oxide Wafer

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