The Japanese component manufacturing company Namiki recently announced several technological advancements and equipment upgrade for advanced industrial component production. Namiki successfully produced unprecedented large sized diamond substrates and realized the bonding of two different materials under room temperatures; moreover, the corporation reinvented its cleaning [...]
2017-08-01meta-author
The paper describes experimental results on low temperature plasma-assisted molecular beam epitaxy of GaN/AlN heterostructures on both 6H-SiC and Si(111) substrates. We demonstrate that application of migration enhanced epitaxy and metal-modulated epitaxy for growth of AlN nucleation and buffer layers lowers the screw and [...]
2019-11-05meta-author
This study simulates thermal conductivity via a carrier scattering mechanism and the related parameters are obtained based on first principles for intrinsic and doped silicon carbide (SiC) over a temperature range of 300–1450 K. The theoretical analysis results show that the thermal conductivity decreases with [...]
2020-02-11meta-author
PAM XIAMEN offers 6″FZ Prime Silicon Wafer-1
6″ Si wafer, Diameter 150mm, FZ Gas Dope, SSP, N(100), resistivity 2000-7000Ωcm
PARAMETER
SPECIFICATION
GENERAL CHARACTERISTICS
1
Growth Method
FZ Gas Dope
2
Crystal Orientation
(100)
3
Conductivity Type
n
4
Dopant
Phosphorus
5
Nominal Edge Exclusion
6 mm
ELECTRICAL CHARACTERISTICS
6
Resistivity
2000 – 7000 Ωcm
7
Life Time
>1500 µsec
CHEMICAL CHARACTERISTICS
8
Oxygen Concentrations
< 2xE16 at/cm3
9
Carbon Concentrations
< 2xE16 at/cm3
WAFER PREPARATION CHARACTERISTICS
10
Front Surface Condition
Polished, [...]
2020-04-17meta-author
PAM XIAMEN offers SrTiO3 single crystal.
SrTiO3 single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]
2019-05-14meta-author
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
The spontaneous emission characteristics of green- and red-emitting InGaN quantum wells (QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for the QWs grown on ternary substrate were compared with those of InGaN QWs on [...]
2014-04-02meta-author