PAM XIAMEN offers 2″ Silicon Wafer.
Material | Orient. | Diam. | Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |
p-type Si:B | [100] | 2″ | 280 | P/E | 0.5-0.6 | Prime, NO Flats |
p-type Si:B | [100] | 2″ | 280 | P/E | 0.08-0.10 | SEMI Prime |
p-type Si:B | [100] | 2″ | 1000 | P/E | 0.073-0.090 | SEMI Prime, |
p-type Si:B | [100] | 2″ | 250 | P/P | 0.02-0.04 | SEMI Prime |
p-type Si:B | [100] | 2″ | 225 | P/P | 0.015-0.020 | SEMI Prime |
p-type Si:B | [100] | 2″ | 1000 | P/P | 0.015-0.045 | SEMI Prime, |
p-type Si:B | [100] | 2″ | 280 | P/P | 0.008-0.095 | SEMI Prime |
p-type Si:B | [100-4°] | 2″ | 300 | P/P | 0.003-0.004 | SEMI Prime, |
p-type Si:B | [100-6° towards[110]] | 2″ | 300 | P/E | 0.0026-0.0029 | SEMI Prime |
p-type Si:B | [100] | 2″ | 300 | P/E | 0.0023-0.0029 | SEMI Prime |
p-type Si:B | [100] | 2″ | 250 | P/P | 0.001-0.006 | SEMI Prime, |
p-type Si:B | [100-6° towards[110]] | 2″ | 275 | P/E | 0.001-0.005 | SEMI Prime, |
p-type Si:B | [100] | 2″ | 280 | P/E | 0.001-0.005 | SEMI Prime, |
p-type Si:B | [100] | 2″ | 300 | P/E | 0.001-0.005 | Prime, NO Flats |
p-type Si:B | [100] | 2″ | 500 | P/P | 0.001-0.005 | SEMI Prime, |
p-type Si:B | [111-10° towards[112]] | 2″ | 300 | P/E | 20-25 | SEMI Prime |
p-type Si:B | [111] | 2″ | 380 | P/P | 10-20 | SEMI Prime |
p-type Si:B | [111-2° towards[112]] | 2″ | 1000 | P/P | 10-30 | SEMI Prime |
p-type Si:B | [111] | 2″ | 500 | P/P | 2.4-2.6 | SEMI Prime |
p-type Si:B | [111] | 2″ | 300 | P/P | 2-3 | SEMI Prime |
p-type Si:B | [111] | 2″ | 500 | P/E | 2-3 | SEMI Prime |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.