2″ Silicon Wafer-12

PAM XIAMEN offers 2″ Silicon Wafer.

Material Orient. Diam. Thck
(μm)
Surf. Resistivity
Ωcm
Comment
p-type Si:B [100] 2″ 280 P/E 0.5-0.6 Prime, NO Flats
p-type Si:B [100] 2″ 280 P/E 0.08-0.10 SEMI Prime
p-type Si:B [100] 2″ 1000 P/E 0.073-0.090 SEMI Prime,
p-type Si:B [100] 2″ 250 P/P 0.02-0.04 SEMI Prime
p-type Si:B [100] 2″ 225 P/P 0.015-0.020 SEMI Prime
p-type Si:B [100] 2″ 1000 P/P 0.015-0.045 SEMI Prime,
p-type Si:B [100] 2″ 280 P/P 0.008-0.095 SEMI Prime
p-type Si:B [100-4°] 2″ 300 P/P 0.003-0.004 SEMI Prime,
p-type Si:B [100-6° towards[110]] 2″ 300 P/E 0.0026-0.0029 SEMI Prime
p-type Si:B [100] 2″ 300 P/E 0.0023-0.0029 SEMI Prime
p-type Si:B [100] 2″ 250 P/P 0.001-0.006 SEMI Prime,
p-type Si:B [100-6° towards[110]] 2″ 275 P/E 0.001-0.005 SEMI Prime,
p-type Si:B [100] 2″ 280 P/E 0.001-0.005 SEMI Prime,
p-type Si:B [100] 2″ 300 P/E 0.001-0.005 Prime, NO Flats
p-type Si:B [100] 2″ 500 P/P 0.001-0.005 SEMI Prime,
p-type Si:B [111-10° towards[112]] 2″ 300 P/E 20-25 SEMI Prime
p-type Si:B [111] 2″ 380 P/P 10-20 SEMI Prime
p-type Si:B [111-2° towards[112]] 2″ 1000 P/P 10-30 SEMI Prime
p-type Si:B [111] 2″ 500 P/P 2.4-2.6 SEMI Prime
p-type Si:B [111] 2″ 300 P/P 2-3 SEMI Prime
p-type Si:B [111] 2″ 500 P/E 2-3 SEMI Prime

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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