2″ Silicon Wafer-14

2″ Silicon Wafer-14

PAM XIAMEN offers 2″ Silicon Wafer.

Material Orient. Diam. Thck
(μm)		 Surf. Resistivity
Ωcm		 Comment
n-type Si:P [100] 2″ 5000 P/E 3.4-3.7 SEMI Prime, Individual cst
n-type Si:P [100] 2″ 40 ±10 P/P 1-3 SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 5 wafers
n-type Si:P [100] 2″ 1000 P/P 1-10 SEMI Prime
n-type Si:Sb [100] 2″ 280 P/E 0.01-0.02 SEMI Prime
n-type Si:Sb [100] 2″ 1000 P/E 0.005-0.020 SEMI Prime
n-type Si:As [100] 2″ 300 P/P 0.001-0.005 SEMI Prime
n-type Si:As [100] 2″ 500 P/E 0.001-0.005 SEMI Prime
n-type Si:As [100] 2″ 7000 P/E 0.001-0.005 SEMI Prime, Individual cst
n-type Si:P [111] 2″ 10000 P/E 46-52 SEMI Prime,  Individual cst
n-type Si:P [111] 2″ 10000 P/E 46-52 SEMI Prime,  Individual cst
n-type Si:P [111] 2″ 10000 P/E 40-52 SEMI Prime, Individual cst
n-type Si:P [111] 2″ 5000 P/E 35-50 SEMI Prime, , Individual cst
n-type Si:P [111] 2″ 250 P/E 25-35 Prime, NO Flats
n-type Si:P [111] 2″ 300 P/P 23-33 SEMI Prime
n-type Si:P [111] 2″ 700 P/E 22-28 SEMI Prime
n-type Si:P [111] 2″ 5000 P/P 20-40 SEMI Prime, Individual cst
n-type Si:P [111] 2″ 10000 P/E >20 SEMI Prime, Individual cst
n-type Si:P [111] 2″ 300 P/E 10-25 SEMI Prime
n-type Si:P [111-5°] 2″ 600 P/E ~10 SEMI Prime
n-type Si:P [111] 2″ 450 P/P 6-10 SEMI Prime
n-type Si:P [111-4° towards[112]] 2″ 500 P/E 5-10 SEMI Prime

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system.Test report is provided for each shipment, and each wafer are warranty.

2019-03-07

Share this post

Related Posts

PAM-XIAMEN Offers High Purity Semi-Insulating SiC Substrate

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of High Purity Semi-insulating SiC substrate and other related products and services announced the new availability of size 2”&3”&4”&6” is on mass production by PVT. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. [...]

2018-05-04meta-author
Si+SiO2+Ti( or TiO2)+Pt Thin Film

PAM XIAMEN offers Si+SiO2+Ti(TiO2)+Pt (Poly or single crystalline)Thin Film, specifications are as follows: 1. Specifications of Coated Silicon Wafer Si+SiO2 +Ti( or TiO2)+Pt (111) Highly Oriented Polycrystal SiO2+Ti+Pt (111) thin film on Si substrate, 5x5x0.525mm, 1sp, P-type, B-doped, (SiO2=300nm, Ti=10nm, Pt(111)=150nm) SiO2+Ti+Pt(111) thin film on Si substrate [...]

2019-04-29meta-author
What is Carrier Mobility?

Carrier mobility is often used to refer to the overall movement of electrons and holes in semiconductors. Mobility refers to the average drift velocity of carriers (electrons and holes) under the action of a unit electric field. That is a measure of the speed [...]

2022-06-06meta-author
2″ Silicon Wafer-11

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [110] 2″ 2000 P/P 1-10 1 F @ <1,-1,0> p-type Si:B [110] 2″ 350 P/E 0.1-1.0 PF<111> SF 109.5° p-type Si:B [110] 2″ 280 P/P 0.080-0.085 PF<111> SF 109.5° p-type Si:B [100] 2″ 500 P/P 1,300-8,000 SEMI Prime p-type Si:B [100] 2″ 500 P/P 1,300-2,600 SEMI Prime p-type Si:B [100] 2″ 250 P/P FZ 510-1,200 SEMI Prime p-type Si:B [100] 2″ 300 P/P ~150 SEMI Prime p-type Si:B [100] 2″ 300 P/P 90-120 SEMI Prime p-type Si:B [100] 2″ 300 P/P 70-80 SEMI Prime p-type Si:B [100] 2″ 1400 P/P 6-8 Prime, NO Flats p-type Si:B [100] 2″ 1500 P/P 6-8 Prime, NO Flats p-type Si:B [100] 2″ 3000 P/E 6-8 Prime, NO Flats, Individual cst p-type Si:B [100] 2″ 3000 P/E 4.9-5.3 Prime, NO Flats, Individual cst p-type Si:B [100] 2″ 300 P/E 1-10 SEMI Prime p-type Si:Ga [100] 2″ 350 P/P 1-5 SEMI Prime p-type Si:B [100] 2″ 500 P/E 1-2 SEMI [...]

2019-03-07meta-author
Au (epi) /Cr coated SiO2/Si substrate

PAM XIAMEN offers Au (epi) /Cr coated SiO2/Si substrate. Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate , 6″x0.675 mm,1sp P-type B-doped, Au(111)=150 nm, Cr=20nm Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Cr=5 nm Au( highly oriented [...]

2019-04-26meta-author
Low Temperature GaAs

(LT-GaAs)Experimental Results PAM XIAMEN offers Low Temperature GaAs. Preparation for pump & probe measurement Reflectance spectra measurement ： we could not observe the reflectance peak. PL spectra measurement ： PL spectra were observed between 810 and 845 nm. Pump & probe measurement (10 K) ・We have observed 0.6-1.6 picosecond decay [...]

2019-03-15meta-author