2″ Silicon Wafer-3

PAM XIAMEN offers 2″ Silicon Wafer.

Diameter Type Dopant Growth
method
Orientation Resistivity  Thickness Surface Grade
50.8 P Boron CZ -100 1-20 140-160 P/P PRIME
50.8 P Boron FZ -100 >1000 200-500 P/P PRIME
50.8 P Boron FZ -100 >3000 225-275 P/P PRIME
50.8 P Boron CZ -100 1-20 225-275 P/P PRIME
50.8 P Boron CZ -100 .001-.005 250-300 P/E PRIME
50.8 P Boron CZ -100 .005-.02 250-300 P/E PRIME
50.8 P Boron FZ -100 >3000 250-300 P/E PRIME
50.8 P Boron CZ -100 1-20 250-300 P/E PRIME
50.8 P Boron CZ -100 1-20 250-300 P/E/DTOx PRIME
50.8 P Boron CZ -100 1-20 250-300 P/E/Ni PRIME
50.8 P Boron CZ -100 1-20 250-300 P/E/OX PRIME
50.8 P Boron CZ -100 1-20 250-300 P/E/WTOx
50.8 P Boron CZ -100 .001-.005 275-325 P/E PRIME
50.8 P Boron CZ -100 450-500 P/P PRIME
50.8 P Boron FZ -100 4000-10000 475-525 P/P PRIME
50.8 P Boron CZ -100 1-20 500-550 P/E PRIME
50.8 P Boron CZ -100 1-20 950-1000 P/P PRIME
50.8 P Boron CZ -100 1-20 1000-1050 P/E PRIME
50.8 P Boron CZ -111 1-20 225-275 P/P PRIME
50.8 P Boron CZ -111 1-20 250-300 P/E PRIME

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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