2″ Silicon Wafer-6

PAM XIAMEN offers 2″ Silicon Wafer.

Material Orient. Diam. Thck
(μm)
Surf. Resistivity
Ωcm
Comment
p-type Si:B [111] 2″ 1000 P/E 0.001-0.005 SEMI Prime
p-type Si:B [111] ±0.5° 2″ 500 P/P <0.01 SEMI Prime
p-type Si:B [111] ±0.5° 2″ 500 P/P <0.01 {0.00087-0.00100} SEMI Prime
p-type Si:Ga Poly. 2″ C/C 0.024-0.036 Gallium doped Concentrate (each with measured Gallium content)
n-type Si:P [110] 2″ 280 P/E 19-33 SEMI Prime, 1 Flat @ [1,-1,0], in hard cst
n-type Si:P [110] 2″ 280 P/E 19-33 SEMI Prime,
n-type Si:P [110] ±0.5° 2″ 300 P/E 1-5 SEMI Prime, , TTV<5μm
n-type Si:Sb [110] 2″ 375 P/E 0.005-0.020 SEMI
n-type Si:Sb [110] 2″ 375 P/E 0.005-0.020 SEMI
n-type Si:P [100] 2″ 400 P/P 210-880 SEMI Prime,
n-type Si:P [100] 50mm 280 P/E 130-280 SEMI Prime,
n-type Si:P [100] 2″ 300 P/P 33-48 SEMI TEST – Some wafers have scratches,
n-type Si:P [100] 2″ 300 P/P 10-30 SEMI Prime
n-type Si:P [100] 2″ 300 P/P 10-30 SEMI Prime
n-type Si:P [100] 2″ 300 P/P 10-30 SEMI Prime
n-type Si:P [100] 2″ 300 P/P 10-30 SEMI
n-type Si:P [100] 2″ 500 P/P 5-10 SEMI Prime,
n-type Si:P [100] 2″ 280 P/E 3-9 SEMI Prime
n-type Si:P [100] 2″ 280 P/E 3-9 SEMI Prime
n-type Si:P [100] 2″ 200±30µm P/P 1.25-2.50 SEMI Prime
n-type Si:P [100] 2″ 280 P/P 1.25-2.50 SEMI Prime

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

Share this post