2″ silicon wafers Thickness:1000 ±25μm

  • Home
  • News
  • 2″ silicon wafers Thickness:1000 ±25μm

PAM XIAMEN offers 2″ silicon wafers Thickness:1000 ±25μm.

2’’ silicon wafers
Ra < 4 nm
(100)
Thickness1000 ±25μm
Doped (no requirement for resistivity and type,
resistivity and type will be shown on test report when shipment)
2 sides polished
With flat (SEMI STD)

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

2019-08-22

Share this post

Related Posts

YSGG single crystal

PAM XIAMEN offers YSGG single crystal. PAM XIAMEN is developing a series of doped GGG single crystal for nest generation Magneto-optical device. Composition  GGG YSGG S-GGG（CaMgZr：GGG） NGG  GYSGG  GSGG  (Cubic)  Gd3Ga5O12 Y3Sc2Ga3O5 Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12  Nd3Ga5O12 Gd0.63Y2.37Sc2Ga3O12 Gd3Sc2Ga3O12 Lattice constant 12.376 Å  12.426 Å ,   12.480 Å 12.505Å   12.507 Å ,   12.554 Å ,   Diffraction（2θ） 51º7′ 50º44′ 50º43′ 50º41′ 50º40′ 50º22′ Melting Point ~1800 oC   ~1877℃ ~1730 oC   ~1550 oC   ~1730 oC   ~1730 oC     For more information, please visit our website: https://www.powerwaywafer.com, send us email at [...]

2019-05-21meta-author
What are Silicon Wafer Flats?

What are Silicon Wafer Flats? PAM XIAMEN offers Silicon Wafer Flats Since Silicon Wafers look basically the same! Flats are cut into the edge of the wafers so users could determine the wafer’s dopant-type and orientation.         Below is an example of silicon wafers flat specs: Spec. 2” 3” 100mm 125mm 150mm 200mm 300mm Diameter 2.000+/-.015” 3.000+/-.025” 100+/-.5mm 125+/-.5mm 150+/-.2mm 200+/-.2mm 300+/-.2mm 50.8+/-.38mm 76.2+/-.63mm Thicknes s 0.011+/-.001” 0.015+/-.001” 525+/-20 um [...]

2019-02-15meta-author
SiC Wafer (4H & 6H) & SiC Film(3C)

PAM XIAMEN offers SiC Wafer (4H & 6H) & SiC Film(3C). The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices. SiC (4H) SiC – 4H (0001), 10x10x0.3 mm [...]

2019-05-15meta-author
Nanostructured surfaces: challenges and frontiers in nanotechnology

Abstract Nanostructured surfaces can be broadly defined as substrates in which the typical features have dimensions in the range 1–100 nm (although the upper limit of 100 nm may be relaxed to greater sizes in some cases, depending on the material and the specific property being investigated). [...]

2018-02-05meta-author
NdGaO3 Substrate

PAM XIAMEN offers NdGaO3 Substrate.   NdGaO3 Substrate (011) NdGaO3 (011) 10x10x0.4 mm, 1 SP NdGaO3 (011) 10x10x0.5 mm, 1 SP NdGaO3 (011) 2″ dia x0.5 mm, 1 SP   NdGaO3 substrates(001) NdGaO3 (001) 5x5x0.5 mm, 1 SP NdGaO3 (001) 10x10x0.5 mm, 1 SP NdGaO3 (001) 10x10x0.5 [...]

2019-05-13meta-author
Ga2O3l-ß Crystal Substrate

Ga2O3l-ß Crystal Substrate PAM XIAMEN offers Ga2O3l-ß Crystal Substrate. Ga2O3-ß Single Crystal Substrate, <010>+/-1° ori, 1″x0.35mm, 2SP, Research grade with “Twin” Substrate Specifications: Chmistry:                    ß-Ga2O3  Structure:                   [...]

2019-04-19meta-author