PAM XIAMEN offers 6″ Prime EPI Wafer.
6″ EPI Wafer
diameter: 6″ (150 +-0,5 mm)
orientation: <100>
primary flat length: 57.5mm+/-2.5mm
primary flat: <110> +/- 1
no secondary flat
overall thickness 280-325μm
TTV <10um
WARP/BOW <50um
TIR <3um
EPI layer:
-type: n
-dopant: P [...]
2019-07-03meta-author
PAM XIAMEN offers Multilayer Graphene on Nickel foil: 2″”x2″” and Pyrolytic Graphite Substrate & Foam.
Isomolded Graphite Plate, Fine Ground, 0.125″T x 4″W x 4″L for Fuel Cell
Pyrolytic Graphite Substrate, C axis Textured, 10x10X0.5 mm, One Side Polished
Pyrolytic Graphite Substrate, C axis Textures, 1″W x [...]
2019-05-06meta-author
PAM XIAMEN offers YVO4 Undoped Yttrium Orthovanadate Crystals.
UNDOPED YVO4 IS AN EXCELLENT NEWLY DEVELOPED BIREFRINGENCE OPTICAL CRYSTAL.
It has very good transmission in a wide wavelength range from visible to infrared.
It has large index of refractivity and birefringence difference.
Compared with other important birefringence crystals, YVO4 has higher. [...]
2019-03-18meta-author
Single crystal AlN substrate can be provided with specifications as found in https://www.powerwaywafer.com/aln-substrate.html.
AlN single crystal is the direct bandgap semiconductor material with the largest bandgap width (6.2 eV), which has excellent characteristics such as extremely high breakdown field strength, excellent thermal conductivity, stable physical and [...]
2024-04-18meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-6
GE03. NOTE: Wafers must be free of striation marks
Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm,
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
TTV<5µm, Bow<30µm, Warp<30µm,
Both-sides-polished, SEMI Flat (one),
Sealed in Empak or equivalent cassette.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-23meta-author
Static induction transistor (SIT) is a type of junction field-effect transistor. It is a unipolar voltage control device developed on the basis of ordinary junction field-effect transistors, with three electrodes: active, gate, and drain. Its source drain current is controlled by an external vertical electric [...]
2024-01-15meta-author