GaN Epitaxial Technology GaN technology today is important technology player- Gallium Nitride on Silicon Carbide (GaN on SiC), Gallium Nitride on Silicon (GaN on Si) and Gallium Nitride on Sapphire (GaN on Sapphire). They are used in LED, RF and microwave devices. We can see [...]
This letter describes the heteroepitaxy of InP on Si by MOCVD. A new epitaxial structure with a thin GaAs intermediate layer (InP/GaAs/Si) is proposed to alleviate the large lattice mismatch (8.4%) between InP and Si. Using this structure, a 4-inch InP single crystal with [...]
2019-08-19meta-author
PAM XIAMEN offers PET film. PET Film with protective film ,200mm×300mmx Minimum thickness-200um PET Film with protective film Size:,200mm×300mm Minimum thickness: -200um For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material [...]
2019-05-14meta-author
Sapphire Substrate Market in 2013 Will cell phone windows come to the rescue? Significant overcapacity and low LED substrate prices will affect the profitability and viability of many sapphire players in 2013 and beyond, but emerging applications could transform the industry. The sapphire material shortage experienced from [...]
2013-01-10meta-author
CZT γ-ray multi-pixel imaging system of PAM-XIAMEN adopts a imaging module of multi-pixel energy spectrum. It can be spliced into a 5×5 array without any blind spots. A total of 6,400 pixels make up a 127x127mm CZT (Cadmium Zinc Telluride) detector square. The system can [...]
2021-07-19meta-author
PAM XIAMEN offers LSAT Substrate. LSAT (LaAlO3)0.3 (Sr2AlTaO6)0.7 or (La,Sr)(Al,Ta)O3 is a kind of mature perovskite crystal with twin-free, LAST is well matched with high temperature superconductors and various oxide materials. In a large number of practical applications, last is expected to replace LaAlO3 and [...]
2019-05-07meta-author
