(20-21) Plane Si-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (20-21) Plane Si-GaN Freestanding GaN Substrate

Item	PAM-FS-GAN(20-21)-SI
Dimension	5 x 10 mm²or 5 x 20 mm²
Thickness	380+/-50um
Orientation	(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type	Semi-Insulating
Resistivity (300K)	> 10⁶ Ω.cm
TTV	≤ 10 µm
BOW	BOW ≤ 10 µm
Surface Roughness:	Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished.
Dislocation Density	≤5 x 10⁶ cm^-2
Macro Defect Density	0 cm-2
Useable Area	> 90% (edge exclusion)
Package	each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

For more information, please contact us email at [email protected] and [email protected]

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Global semiconductor market is forecasted to reach 327 billion dollar in 2016

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8″ Silicon Wafer

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AlGaInP LED Chip Sepcification

AlGaInP LED Chip Sepcification · Orange LED Wafer Substrate: 　　 P+GaAs p-GaP p-AlGaInP MQW n-AlGaInP DBR n-ALGaAs/AlAs Buffer GaAs substrate ·Chip Sepcification (Base on 7mil*7mil chips) 　　　　 Parameter Chip Size 7mil(±1mil)*7mil(±1mil) Thickness 7mil(±1mil) P Electrode U/L N Electrode AU Structure Such as right-shown ·Optical-elctric characters 　　　　　　 Parameter Condition Min. Typ Max. Unit Forward voltage If=10μA 1.35 ┄ ┄ V Reverse voltage If=20mA ┄ ┄ 2.2 V Reverse current V=10V ┄ ┄ 2 μm Wavelength If=20mA 565 ┄ 575 nm Half wave width If=20mA ┄ 10 ┄ nm ·Light intensity characters 　　　　　　 Brightness code LA LB LC LD LE LF LG LH IV(mcd) 10-15 15-20 20-25 25-30 30-35 35-40 40-50 50-60 Source:PAM-XIAMEN If you need more information about AlGaInP LED Chip Sepcification, please visit our website:https://www.powerwaywafer.com, send us email [...]

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[email protected] [email protected]

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(20-21) Plane Si-GaN Freestanding GaN Substrate

(20-21) Plane Si-GaN Freestanding GaN Substrate

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