(20-21) Plane Si-GaN Freestanding GaN Substrate

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(20-21) Plane Si-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (20-21) Plane Si-GaN Freestanding GaN Substrate

ItemPAM-FS-GAN(20-21)-SI
Dimension5 x 10 mm2
Thickness380+/-50um
Orientation(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°

(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°

Conduction TypeSemi-Insulating
Resistivity (300K)> 106 Ω.cm
TTV≤ 10 µm
BOWBOW ≤ 10 µm
Surface Roughness:Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.

Dislocation Density≤5 x 106 cm-2
Macro Defect Density0 cm-2
Useable Area> 90% (edge exclusion)
Packageeach in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

For more information, please contact us email at [email protected] and [email protected]

2020-08-20

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