(20-21) Plane Si-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (20-21) Plane Si-GaN Freestanding GaN Substrate

Item	PAM-FS-GAN(20-21)-SI
Dimension	5 x 10 mm²or 5 x 20 mm²
Thickness	380+/-50um
Orientation	(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type	Semi-Insulating
Resistivity (300K)	> 10⁶ Ω.cm
TTV	≤ 10 µm
BOW	BOW ≤ 10 µm
Surface Roughness:	Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished.
Dislocation Density	≤5 x 10⁶ cm^-2
Macro Defect Density	0 cm-2
Useable Area	> 90% (edge exclusion)
Package	each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

For more information, please contact us email at [email protected] and [email protected]

2020-08-20

Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching

Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching The bowing curvature of the free-standing GaN substrate significantly decreased almost linearly from 0.67 to 0.056 m−1 (i.e. the bowing radius increased from 1.5 to 17.8 m) with increase in [...]

2016-02-03meta-author free standing gan substrate, GaN substrate

GaAs (100) crystal-3

PAM XIAMEN offers GaAs(100) Si- doped crystal . GaAs – Growing Method: VGF (100) Si doped, N-type, 2″ dia x 0.35mm, 2sp,cc: (1.07-3.89) x 10^18 /cm^3 GaAs – Growing Method: VGF (100) Si doped, N-type, 2″ dia x 0.35mm, 1sp,cc: (1.65-3.59) x 10^18 /cm^3 [...]

2019-04-22meta-author

1″ silicon wafers

PAM XIAMEN offers 1″ silicon wafers. If you don’t see what you need, pleaes email us your specs and quantity. Item Dia Thickness (um) Orientation Type Dopant Resistivity (Ohm-cm) Polish Remark PAM1901 25.4mm 20000um <111> P B >1000 DSP FZ PAM1902 25.4mm 400um <100> P B ANY SSP Thickness is: 400+/-100um. PAM1903 25.4mm 500um <100> ANY SSP Wafers have particles. Wafers sold “As-Is”. PAM1904 25.4mm 280um <111> Undoped Undoped >2000 SSP Intrinsic FZ PAM1905 25.4mm 73.5um <100> Undoped Undoped >5000 DSP FZ, Float Zone PAM1906 25.4mm 500um <100> P B .01-.05 DSP NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM1907 p-type Si:B [100] 1″ 280um P/E 0-100 ohm-cm SEMI, 1Flat, Soft cst PAM1908 Intrinsic Si:- [111] 1″ 280um P/E FZ [...]

2019-02-21meta-author

LD Bare Bar for [email protected] 2mm

PAM XIAMEN offers LD Bare Bar for [email protected] 2mm. Brand: PAM-XIAMEN Wavelength: 940nm Filling Factor: 80% Output Power: 600W Cavity Length:2mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., [...]

2019-05-09meta-author

A Plane N-GaN Freestanding GaN Substrate

PAM-XIAMEN offers A Plane N-GaN Freestanding GaN Substrate Item PAM-FS-GAN A-N Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation A plane (11-20) off angle toward M-axis 0 ±0.5° A plane (11-20) off angle toward C-axis -1 ±0.2° Conduction Type N-type / Si Doped Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW -10 µm ≤ BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]

2020-08-17meta-author

808nm laser wafers

Xiamen Powerway(PAM-XIAMEN), a leading developer and manufacturer of compound semiconductor epitaxial wafers, provides 808nm AlGaInP/GaAs laser wafer. AlGaInP laser epitaxial wafers are high-quality semiconductor materials that can emit light in semiconductor lasers. After made on the laser chip, these materials are energized and can emit light. Then, the electrical [...]

2016-06-13meta-author

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Float-Zone Mono-Crystalline Silicon

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[email protected] [email protected]

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
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Ge(Germanium) Single Crystals and Wafers

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(20-21) Plane Si-GaN Freestanding GaN Substrate

(20-21) Plane Si-GaN Freestanding GaN Substrate

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