PAM XIAMEN offers 3″ Silicon Wafer-21
Si wafer
Orientation: (111) ± 0.5°
Type: p-type
Dopant: B
Diameter: 76.2 ± 0.3 mm
Thickness: 380 ± 25 um
Disorientation: 2° to <11-2>
Resistivity: < 0.002 Ohm*cm
Single side polished
C Boron > E20 atom/cm3
Oi < 1E18 atom/cm3
[...]
2020-03-18meta-author
Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy
Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, [...]
PAM XIAMEN offers LD Bare Bar for [email protected] 2mm.
Brand: PAM-XIAMEN
Wavelength: 940nm
Filling Factor: 80%
Output Power: 600W
Cavity Length:2mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
A process model of wafer thinning by diamond grinding
This paper is to develop and investigate a wafer thinning process model (WTPM) to integrate the wafer thickness into set-up parameters and predict total thickness variation (TTV) of ground wafers with modification of the wafer grinding [...]
GaN-On-Si Key Patent Analysis
The size of sapphire substrates is increasing to response to the current trend toward the low LED price, but it is actually hard to grow sapphire single crystals to a large size. For this reason, research on adopting silicon that has [...]
2012-12-19meta-author
PAM XIAMEN offers 80+1mm FZ Si Ingot-4
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
2020-04-16meta-author