(20-21) Plane Si-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (20-21) Plane Si-GaN Freestanding GaN Substrate

Item	PAM-FS-GAN(20-21)-SI
Dimension	5 x 10 mm²or 5 x 20 mm²
Thickness	380+/-50um
Orientation	(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type	Semi-Insulating
Resistivity (300K)	> 10⁶ Ω.cm
TTV	≤ 10 µm
BOW	BOW ≤ 10 µm
Surface Roughness:	Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished.
Dislocation Density	≤5 x 10⁶ cm^-2
Macro Defect Density	0 cm-2
Useable Area	> 90% (edge exclusion)
Package	each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

For more information, please contact us email at [email protected] and [email protected]

2020-08-20

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Ultra-Thinned Silicon Wafers

PAM XIAMEN offers Thinned Silicon Wafers! We have them! In Stock and ready to ship! Free Standing Thin Silicon Wafers We offer freestanding super thin silicon wafers with thicknesses ranging from 5µm to 100µm and with diameters from 5mm to 6. The thin Silicon wafers are true mirror [...]

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[email protected] [email protected]

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(20-21) Plane Si-GaN Freestanding GaN Substrate

(20-21) Plane Si-GaN Freestanding GaN Substrate

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