(20-21) Plane Si-GaN Freestanding GaN Substrate

  • Home
  • News
  • (20-21) Plane Si-GaN Freestanding GaN Substrate

(20-21) Plane Si-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (20-21) Plane Si-GaN Freestanding GaN Substrate

Item PAM-FS-GAN(20-21)-SI
Dimension 5 x 10 mm2
Thickness 380+/-50um
Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°

(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type Semi-Insulating
Resistivity (300K) > 106 Ω.cm
TTV ≤ 10 µm
BOW BOW ≤ 10 µm
Surface Roughness: Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.
Dislocation Density ≤5 x 106 cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

2020-08-20

Share this post

Related Posts

MgO single crystal substrate-3

PAM XIAMEN offers MgO single crystal substrate. MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in sizes up to [...]

2019-05-13meta-author
Si+SiO2 +Ti( or TiO2)+Pt Thin film

PAM XIAMEN offers Si+SiO2 +Ti( or TiO2)+Pt Thin film. Si+SiO2 +Ti( or TiO2)+Pt (111) Highly Oriented Polycrystal SiO2+Ti+Pt (111) thin film on Si substrate, 5x5x0.525mm, 1sp, P-type, B-doped, (SiO2=300nm, Ti=10nm, Pt(111)=150nm) SiO2+Ti+Pt(111) thin film on Si substrate ,10x10x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=10nm ,Pt(111)=150nm) SiO2+Ti+Pt(111) thin [...]

2019-05-16meta-author
FE SRTIO3 IRON DOPED STRONTIUM TITANATE CRYSTAL SUBSTRATES FE CONCENTRATION 0.05 WT%

PAM XIAMEN offers Fe SrTiO3 Iron Doped Strontium Titanate Crystal Substrates. Single crystal SrTiO3 doped with 0.05 wt%  Fe Specifications: Crystal Structure:Cubic Growth Method:Vernuil Method Lattice Parameter:a=3.905Å Fe Doping Concentrations:0.05% Melting Point:2080C Density:5.122 g/ccm Hardness:6-6.5 Mohs Thermal expansion:10.3 x 10^-6/K Dielectric Constant:5.2 Dielectric Loss: ~5×10^-4（300K） ~3×10^-4（77K） Sizes Available:10×3m、10×5m、10×10mm、15×15mm、20×15mm can be customized upon request Typical thickness:0.5mm or 1.0mm Orientations:<100>、<110>、<111> Miscut:0.5 degree Surface Polishing:single or double [...]

2019-03-14meta-author
Al2O3 (Sapphire)-2

Al2O3 (Sapphire) PAM XIAMEN offers high-quality Al2O3 (Sapphire) with C-Plane (0001) orientation at different size from 5 x 5mm2 to 4”diameter: 1 square Al2O3 substrate 5x5mm,10x10mm&0.25″x0.25″ Al2O3 Sapphire Wafer, C-plane (0001), 5x5x0.5mm, 1sp – ALC=> PAM Al2O3 Sapphire Wafer, C-plane (0001), 5x5x0.5mm, 2sp – ALC=> PAM Al2O3- Sapphire Wafer, [...]

2019-04-16meta-author
6H SiC Wafer

6H SiC Wafer PAM-XIAMEN can offer 6H SiC wafer with n type or semi-insulating, here we make a brief introduction in two parts: 1.Difference Between 6H and 4H polytype: 1)Commercial resistivity of 6H n type SiC Wafer is (0.02~0.1)ohm.cm, while 4H one is (0.015~0.028)ohm.cm. 2)Stacking sequence [...]

2020-03-25meta-author
Charge Sensitive Pre-amplifier Chip

Charge Sensitive Pre-amplifier Chip PAM-01C is a low noise and high gain charge sensitive preamplifier. It can be used as a key part for semiconductor detector, such as CZT and Si, and other detecting signal readout. Specifications Comparison Brands (PAM-01C) Gremat(PAM-110) Dimensions 24×15×3mm3 22.7×21×3.4mm3 Weight 5g 2.5g Power <0.3W 0.66W Powered by ±12V ±12V Operation temperature -20℃-+40℃ -20℃-+40℃ Equivalent noise level ENC:180e- ENC:260e- Falling edge time 250-400us 150-200us Gain G=5mv/fc G=3.4mv/fc Input charge [...]

2019-04-25meta-author