Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells
Surface passivation has been recognized as a crucial step in the evaluation of minority carrier lifetime of photovoltaic materials as well as in the fabrication of high efficient solar cells. Dilute acids of [...]
PAM XIAMEN offers GaN on Si for Power, E-mode.
1.1 E-MODE GaN HEMT Structure on Silicon
Wafer size
2″, 4″, 6″,8″
AlGaN/GaN HEMT structure
Refer 1.2
Residual 2DEG density (Vg=0 V)
<1e18/cm3
AFM RMS (nm）of 5x5um2
<0.25nm
Bow(um)
<=30um
Edge exclusion
<5mm
p-GaN
/
u-GaN cap layer
/
Al composition
20-30%
AlGaN barrier layer
/
GaN channel
/
AlGaN buffer
/
Substrate material
Silicon substrate
Si wafer thickness (μm)
675um(2″), [...]
2019-05-17meta-author
SiC and GaN Wide Bandgap Device Technology
Wide bandgap (WBG) devices offer significant advantages for next generation military and commercial systems. SiC MESFETs currently achieve power densities of 4.0 W/mm with power added efficiencies in excess of 60% on a repeatable basis. They are commercially [...]
2013-03-13meta-author
An important dispersion in the Rsheet measurement of AlGaN/GaN wafers was found on different samples, with or without SiN passivation. The dispersion is due to a drift of the Rsheet appearing when the sample is placed in the dark. This drift is different for each sample [...]
PAM XIAMEN offers Silicon Block size 5x20mm
Si pieces
Size: 5x20mm, thickness 1mm
FZ
R>5000 ohm.cm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-17meta-author
Development of a gate metal etch process for gallium arsenide wafers
The reactive ion etching of TiWN, which is used as a gate metal on gallium-arsenide device wafers, was studied in a parallel-plate, single-wafer plasma reactor operating at a frequency of 13.56 MHz. We discuss [...]
