PAM XIAMEN offers 2″CZ Prime Silicon Wafer-1
tem2, 100pcs
Silicon wafer:
i. Diameter: 50.8 mm ± 0.5 mm,
ii. Thickness: 275 μm ±25μm,
iii. Doping: N type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
Grade: Prime
Resistivity: 1 Ohm-cm to 10 Ohm-cm
Surface: single side polished
Flats: SEMI Standard
Surface roughness: ≤ 5Å
For more information, send us email at [email protected] and [email protected]
New research of SiC and GaN technology along with LED technology can be shared, and we can send you paper content if you want. Please see below article title: No.1 Technologies for Power Electronics and Packaging (SiC & GaN) 1-1.The latest development of SiC power devices 1-2.New Progress of SiC high voltage power electronic devices and applications 1-3.SiC MOSFET Device Structure and Process Study 1-4.Electro-thermal Analysis of 1.2kV-100A SiC JBS Diodes Under Current Overload 1-5.Graphene-on-SiC for gas detection and bio-sensors 1-6.Packaging of high-voltage wide-bandgap power semiconductors 1-7.High power & high temperature IGBT and WIDE bandgap power semiconductor modual package 1-8.Design and TCAD Simulation of Widegap Semiconductor Devices 1-9.GaN Power Devices Beyond 650V and 150C 1-10.High-breakdown voltage GaN HEMTs fabricated on semi-insulating GaN substrates 1-11.A Gate Driver IC for E-mode GaN HEMTs with Reverse Conduction Detection 1-12.Development of Normally-off AlGaN/GaN HFETs for Power Electronics 1-13.High crystal quality GaN-on-Si to achieve excellent isolation and dynamic performance without carbon doping 1-14.200mm/8-inch GaN power device and GaN-IC technology: a new opportunity for wafer suppliers, foundries and IDMs 1-15.200mm 40V-650V E-mode GaN-on-Si Power Technology: from Device, Package, Reliability to System 1-16.GaN, Power the Future 1-17.AlGaN/GaN heterostructure pH sensors with high Al composition in the barrier layer 1-18.In-situ Wafer Cleaning for Pre-Epitaxial Deposition for Next Generation Semiconductor Devices No.2 Micro-LED and other Novel Display 2-1.A New Concept for Fabricating CMOS-driven, High-Performance MicroLED Displays 2-2.Study on three dimensional thermal transport in micro-LEDs at the level of kW/cm2 2-3.1 bin wavelength uniformity on 200 mm GaN-on-Si LED for micro LED application with precise strain-engineering 2-4.Integration of III-V LEDs with Silicon Thin Film Transistors for Micro-LED Displays 2-5.NAURA product solutions for Mini-LED and Micro-LED 2-6.Driving Micro LED to future Lighting and Display 2-7.Growth and fabrication of semi / non-polar LEDs and Micro-LEDs using nano-patterning technology 2-8.Imaging Light Measurement Device for Subpixel evaluation of Micro-LED and OLED Displays 2-9.China LED Display Application Industry Development Report 2018-2019 2-10.Enabling the Next Era of Display Technologies by Micro LED MOCVD Processing 2-11.Research Progress and Prospects of LED Chips for Next Generation Display Application 2-12.Influence of the Charge Transfer on the Lifetime of Quantum-Dot Light-Emitting Diodes 2-13.Low toxic quantum dots polymer nanocomposites for LED applications 2-14.Micro/Mini-LED: From Backlight to Direct-view Display 2-15.Application of COB Integrated Packaging Technology in UHD LED Display Field 2-16.Prospect analysis of the 4-in-1 technical approach in LED Display Field 2-17.Mini LED, Future Directions and Solutions – from Chipone Technology 2-18.Progress in Cooperation Between LCD and LED Industry No.3 Technologies for Ultra-Wide Bandgap Semiconductor 3-1.An (AlxGa1-x)2O3 metal-semiconductor-metal VUV photodetector 3-2.Growth and Characterization of Ultra-Wide Bandgap Oxide Semiconductors 3-3.Progress of diamond ultra-wide-band-gap semiconductor material and devices 3-4.Application of Polycrystalline Diamond Micro-nano Powder in SiC Wafer Processing and Its Key Process Technology 3-5.Epitaxial Growth of Hexagonal Boron Nitride Films on AlN/Sapphire Templates by MOVPE 3-6.Preparation and photoelectric properties of BN films by RF-sputtering 3-7.High quality h-BN thin films and their application as flexible buffer layer for III-nitrides epitaxy No.4 The Technology in Substrate, Epitaxy and Wafer Growth Equipment (SiC&GaN) 4-1.Synchrotron x-ray diffraction-based visualization of lattice-plane tilting of a GaN substrate and epitaxial film 4-2.In situ coherent x-ray studies of surface dynamics during OMVPE of GaN 4-3.Modeling of SiC crystal growth and epitaxy and simulation of GaN Metal Organic Vapor Deposition 4-4.The effect of n-p electrodes upon the p-type conductivity of B0.375GaN/B0.45GaN QW/QB edge emitting laser diode grown over sapphire substrate 4-5.INDUSTRY4.0 as A Major Opportunity for Electronics Processes and Products 4-6.Interrelationship Between Equipment and PVT Crystal Growth in Silicon Carbide 4-7.Advanced Chemical Concentration Control for Fabrication of Devices Using SiC 4-8.The step growth mechanism for 4H-SiC with Improved Single Polytypes 4-9.Investigation of Defect Levels of Al/Ti 4H-SiC Schottky Structures by Deep Level Transient Spectroscopy No.5 LED Chip, Packaging, and Modules 5-1.Possible Futures for LEDs and LED Packaging 5-2.Beyond Illumination | Latest Photonics Technology, Breakthrough and Application Trend 5-3.Violet Chip Excited White LEDs for Sun-Like Lighting and Horticulture Lighting 5-4.Research and application for warm white LED of high-efficiency tri-color rare earth Phosphors by purple light Excitation 5-5.Recent progress of fluorescent materials for high-power LED 5-6.Simultaneously improve the luminous efficiency and color rendering index of GaN-based white light emitting diodes using metal localized surface plasmon resonance 5-7.Thermal Simulations of a UV LED module with nanosilver sintered die attach process on graphene coated copper substrates 5-8.Recent progress on massive transfer and integration technologies of Mini & Micro-LEDs 5-9.Anisotropic Conductive Paste and Grip Ring Direct process for mini LED die attachment 5-10.Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Driving Transistor 5-11.GaN/Si LEDs: Towards Longer Wavelength and Smaller Current Density 5-12.Recent Advances in Achieving Ultra-High Efficiency InGaN-based LEDs 5-13.The effect of air-cavity structure on the process of vertical GaN-based light emitting diodes 5-14.A Wavelength Stabilized GaN based Laser Utilizing Distributed Bragg Reflector No.6 RF Technology and 5G Mobile Communication 6-1.The Epi structure and Process Considerations of 6-inch GaN RF HEMT for 5G applications 6-2.High frequeny GaN HEMTs and MMICs 6-3.5G mm Wave 6-4.High-frequency GaN-on-Si transistors 6-5.Development and trend of 5G RF Devices and Circuits 6-6.High-linearity GaN HEMTs for millimeter-wave applications 6-7.A Highly Integrated Multi-Parameters RF Module for Microwave Semiconductor Testing 6-8.A Compact X-band Pallet Power Amplifier Using GaN MMIC and Discrete FETs with HMIC Technology No.7 [...]
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