PAM XIAMEN offers 2″CZ Prime Silicon Wafer-1
tem2, 100pcs
Silicon wafer:
i. Diameter: 50.8 mm ± 0.5 mm,
ii. Thickness: 275 μm ±25μm,
iii. Doping: N type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
Grade: Prime
Resistivity: 1 Ohm-cm to 10 Ohm-cm
Surface: single side polished
Flats: SEMI Standard
Surface roughness: ≤ 5Å
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 75 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 136 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 20 n- Si:P 300±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 21 n- Si:P 400±10% N/N+ 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 22.5 n- Si:P 12.5±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 25 n- Si:P 0.08 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 25 n- Si:P 0.04 ±10% N/N+ 4″Øx360μm n- Si:Sb[111] 0.005-0.020 P/E 37.5 n- Si:P 270 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 37.5 n- Si:P 85±10% N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 58 n- Si:P 60±10% N/N/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 15 n- Si:P 8±10% N/N/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 5 n- Si:P 3±10% N/N/N/N+ 4″Øx460μm n- Si:Sb[111] 0.007-0.020 P/E 60 n- Si:P 40.5±4.5 N/N/N+ 4″Øx460μm n- Si:Sb[111] 0.007-0.020 P/E 20 n- Si:P 10±2 N/N/N+ 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 60 n- Si:P 58.75 ±10% N/N+ 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 60 n- [...]
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