PAM XIAMEN offers 2″CZ Prime Silicon Wafer-1
tem2, 100pcs
Silicon wafer:
i. Diameter: 50.8 mm ± 0.5 mm,
ii. Thickness: 275 μm ±25μm,
iii. Doping: N type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
Grade: Prime
Resistivity: 1 Ohm-cm to 10 Ohm-cm
Surface: single side polished
Flats: SEMI Standard
Surface roughness: ≤ 5Å
For more information, send us email at [email protected] and powerway[email protected]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title:GaN LEDs fabricated using SF6 plasma RIE Published by: Wasif Khan ; Xiaopeng Bi ; Bin Fan ; Wen Li Department of Electrical and [...]
PAM XIAMEN offers 6″ Prime EPI Wafer. 6″ EPI Wafer diameter: 6″ (150 +-0,5 mm) orientation: <100> primary flat length: 57.5mm+/-2.5mm primary flat: <110> +/- 1 no secondary flat overall thickness 280-325μm TTV <10um WARP/BOW <50um TIR <3um EPI layer: -type: n -dopant: P [...]
The GaAs substrate (gallium arsenide substrate) doped with silicon, grown by VGF, is available from GaAs substrate supplier – PAM XIAMEN, which is for fabricating LED (light-emitting diodes). GaAs is zinc blende crystal structure. The GaAs substrate orentation is (100)150± 0.50 off toward (111)A with [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [111] 2″ 280 P/E/P 1-20 SEMI Prime p-type Si:B [111-1.5°] 2″ 400 P/E 1-10 SEMI Prime p-type Si:B [111] 2″ 500 P/E 1-10 SEMI Prime, p-type Si:B [111-10° towards[112]] 2″ 280 P/E 0.5-0.6 SEMI Prime p-type Si:B [111-3°] 2″ 300 P/P 0.016-0.018 SEMI Prime p-type Si:B [111-3.5°] 2″ 280 P/P 0.01-0.02 SEMI Prime p-type Si:B [111] 2″ 600 P/E 0.01-0.05 SEMI Prime p-type Si:B [111-6° towards[110]] 2″ 275 P/E 0.001-0.005 SEMI Prime n-type Si:P [110] 2″ 1000 P/P ~4 NO Flats n-type Si:P [110] 2″ 950 P/P 2.5-3.5 1 F @ <1,-1,0> n-type Si:P [110] 2″ 450 P/P ~0.6 1 F @ <001> n-type Si:P [110] 2″ 1000 P/P 0.5-1.0 PF<111> SF 109.5° n-type Si:P [100] 2″ 500 P/P 800-1,500 SEMI Prime, n-type Si:P [100] 2″ 300 P/E >50 SEMI Prime, n-type Si:P [100] 2″ 5000 P/E 42-53 SEMI Prime, , Individual cst n-type [...]
Measurements on the spectroscopic performance of CdZnTe coplanar grid detectors A performance study was performed for CdZnTe coplanar grid (CPG) detectors when used as γ-ray spectrometers. The detectors have the crystal volumes of 1, 1.6875 and 2.25 cm3, respectively. Time stability of each CdZnTe CPG detector [...]
PAM XIAMEN offers high-quality BaTiO3. BaTiO3 Substrates (110) BaTiO3 (110) 5x5x0.5 mm, 1SP, Substrate grade(with domains) BaTiO3 (110) 5x5x1.0 mm, 2SP, Substrate grade(with domains) BaTiO3 (110) 10 x 10 x0.5 mm, 1SP, Substrate grade (with domains) For more information, please visit our website: https://www.powerwaywafer.com, [...]
