PAM XIAMEN offers Sodium-bismuth tungstate (NaBi(WO4)2.
Sodium-bismuth tungstate (NaBi(WO4)2 or NBWO) is a scintillator material possessing very high optical quality, high density and radiation hardness. Due to these properties NBWO crystals are widely used in quantum electronics, acousto-optics and high-energy physics, in particular, in [...]
2019-05-13meta-author
Undoped InP Wafer
PAM-XIAMEN offer undoped intrinsic InP wafer substrate, see the following:
InP wafer,2” (PAM-190507-INP)
Diameter – 50.8±0.5 mm;
Thickness – 350±25 µm;
N type, undoped
Dopant – undoped
Orientation – (100)±0.5°
Flat orientation – SEMI-E/J;
Major flat orientation – (0-1-1) ±0.5°
Major flat length [...]
2020-03-18meta-author
PAM XIAMEN offers Co Metallic Substrate.
Co Single Crystal Substrate (100) 10×10 x1.0 mm, 1 side polished
Co Single Crystal Substrate (111) 10×10 x 1.0 mm, 1 side polished
Co Metallic Substrate (polycrystalline): 10×10 x 1.0 mm, 1 side polished
Cr Metallic Substrate ( [...]
2019-05-08meta-author
Annealed silicon wafer can be provided with low defect density from PAM-XIAMEN. The purpose of using annealed wafer is to eliminate defects on the silicon wafer surface and the component manufacturing area of the surface layer, and has a strong ability to capture heavy [...]
2019-02-26meta-author
PAM XIAMEN offers Diced Silicon Wafers.Wafer thickness could be customized.
PAM XIAMEN and our partners provide researchers with creative silicon wafer and other substrate dicing solutions. Using precision diamond saws we can cut a variety of hard brittle materials.
Our Services Include.
Small quantity wafer dicing at [...]
2019-02-20meta-author
GaAs (gallim arsenide) epitaxial wafer with specific growth for high voltage (HV) diode stacks can be provided by PAM-XIAMEN. Gallium arsenide structure provides required power density, efficiency and reliability for extremely compact systems. GaAs diode wafers meet the requirements for power electronics in modern [...]
2022-01-28meta-author