2″ Silicon Wafer
Resistivity 1-5Ωcm
P type, Boron doped
Orientation (100)
Thickness 300±25μm
SSP
SEMI Prime, 1Flat, Hard cst
For more information, send us email at [email protected] and [email protected]
This standard specifies the test method for the dislocation density of germanium single crystal. This standard method is applicable to the measurement of dislocation density of monocrystal germanium on {111), {100} and {113} planes. The test range is 0cm-2~100000cm-2. 1. Normative Document Citation for Determining [...]
PAM XIAMEN offers Au (highly oriented polycrystalline)/Ti/SiO2/Si substrate: PAM-191005-SI/SIO2/TI/AU: Au( highly oriented polycrystalline)/Ti/ SiO2 on Silicon substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Ti=2 nm ,SiO2=300nm Specifications Au/Ti/SiO2/Si substrate: 1.Structure: Au/Ti/ SiO2 on Si substrate Flim thickness: Au(111)=50 nm Ti=2 nm SiO2=300 nm 2.Substrate spec: Material:Si substrate Size: 4″ dia. Orientation:(100) Type:P type Dopant:B doped Thickness:525 um Grade: [...]
PAM XIAMEN offers 50.8mm Si wafers. Please send us email at [email protected] if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2121 p-type Si:B [110] 2″ 380 P/P FZ 130–160 1 F @ <111> only PAM2122 p-type Si:B [110] 2″ 280 P/E FZ 120–300 1 F @ <111> only PAM2123 p-type Si:B [100] 2″ 300 P/P FZ 400–1,000 Prime, NO Flats, hard cst PAM2124 p-type Si:B [100] 2″ 300 P/E FZ >50 SEMI Prime, 2Flats, hard cst PAM2125 p-type Si:B [111] 2″ 300 P/E FZ 730–1,050 SEMI Prime, [...]
PAM XIAMEN offers Single-emitter LD Chip 755nm @8W. Brand: PAM-XIAMEN Wavelength: 755nm Stripe width: 350um Output Power: 8W Cavity Length:2.5mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
Enhanced Continuous-wave Trahertz emission by nano-electrodes in a photoconductive photomixer Semiconductor materials used as PCA-based photomixers must exhibit high resistivity, high carrier mobility and ultrashort carrier lifetime. Low-temperature-grown GaAs (LT GaAs) has been shown to have such characteristics 14–18 . The samples used in our experiment had [...]
PAM XIAMEN offers KH2PO4 crystal. KH2PO4 (100), 10x10x 1.0 mm 1 Side polished Crystal: Monopotassium Phosphate Orientation: <100> Size: 10 x 10 x 0.9 mm Polished: one side polished Package: 1000 class clean plastic bag sealed Applications: Monopotassium Phosphate crystal [...]
