2″ Silicon Wafer
Resistivity 1-5Ωcm
P type, Boron doped
Orientation (100)
Thickness 300±25μm
SSP
SEMI Prime, 1Flat, Hard cst
For more information, send us email at [email protected] and [email protected]
PAM-XIAMEN offers M Plane U-GaN Freestanding GaN Substrate Item PAM-FS-GAN M-U Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation M plane (1-100) off angle toward A-axis 0 ±0.5° M plane (1-100) off angle toward C-axis -1 ±0.2° Conduction Type N-type / Undoped Resistivity (300K) < 0.1 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]
New graphene fabrication method uses silicon carbide template Graphene transistors. Georgia Tech researchers have fabricated an array of 10,000 top-gated graphene transistors, believed to be the largest graphene device density reported so far. (PhysOrg.com) — Researchers at the Georgia Institute of Technology have developed a new [...]
PAM XIAMEN offers 4″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 100 N Phos CZ -100 1-20 500-550 P/E/WTOx 100 N Phos CZ -100 1-50 2900-3100 P/E PRIME 100 N Phos CZ -100 50-70 4850-5050 P/E PRIME 100 N Phos CZ -100 1-50 5900-6100 P/E PRIME 100 N Phos CZ -100 >10 9900-10100 P/P PRIME 100 N Phos CZ -111 1-10 4000-6000 P/E PRIME 100 N Phos FZ -111 > 20000 275-325 P/E PRIME 100 N Phos FZ -111 > 20000 275-325 P/P PRIME 100 N Phos FZ -111 2000-4000 275-325 P/P PRIME 100 N Phos CZ -111 450-500 P/P PRIME 100 N Phos FZ -111 > 20000 475-525 P/P PRIME 100 N As CZ -111 .001-.005 500-550 P/E PRIME 100 N Phos CZ -111 1-20 500-550 P/E PRIME 100 N Phos FZ -111 2000-4000 500-550 P/P PRIME 100 N Phos CZ -111 1-20 4800-5200 P/E PRIME 100 N Phos CZ -111 1-3 11300-11500 P/E PRIME 100 N Phos CZ -110 450-500 P/P PRIME 100 N Phos CZ -110 1-20 500-550 P/E PRIME 100 P Boron CZ (100)-4 0.01-0.02 175-225 P/P PRIME 100 P Boron CZ (100)-4 0.01-0.02 200-250 P/E PRIME 100 P Boron CZ (100)-4 0.01-0.02 325-375 P/P PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth [...]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 4″ 300 P/P 5-10 SEMI Test, Scratched and unsealed. Can be re-polished for extra fee p-type Si:B [100] 4″ 380 P/E 5-10 SEMI TEST (in Opened cassette), 2Flats p-type Si:B [100] 4″ 380 P/E 5-10 SEMI Prime p-type Si:B [100] 4″ 380 P/E 5-10 SEMI TEST (with bad surface) p-type Si:B [100] 4″ 380 P/E 5-10 SEMI Prime, hard cst, Back-side slightly darker than normal p-type Si:B [100] 4″ 380 P/E 5-10 SEMI Test, Dirty wafers, can be cleaned for extra fee p-type Si:B [100] 4″ 380 BROKEN 5-10 Broken P/E Wafers, [...]
PAM XIAMEN offers Cu Coated Silicon. Cu Film on Silicon Wafer, 4″ , 400 nm Thick, – Cu-Ti on Si-4-400nm Cu Film on Ta/Silicon Wafer, 4″ , 100 nm Thick, – Cu-Ta-Si-4-100nm Cu Film on Ta/thermal oxide/Silicon Wafer, 4″ , 400 nm Thick, – [...]
PAM XIAMEN offers NdGaO3 Substrate. NdGaO3 Substrate (011) NdGaO3 (011) 10x10x0.4 mm, 1 SP NdGaO3 (011) 10x10x0.5 mm, 1 SP NdGaO3 (011) 2″ dia x0.5 mm, 1 SP NdGaO3 substrates(001) NdGaO3 (001) 5x5x0.5 mm, 1 SP NdGaO3 (001) 10x10x0.5 mm, 1 SP NdGaO3 (001) 10x10x0.5 [...]
