2″ Silicon Wafer
Resistivity 1-5Ωcm
P type, Boron doped
Orientation (100)
Thickness 300±25μm
SSP
SEMI Prime, 1Flat, Hard cst
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PAM XIAMEN offers Titanium Oxide TiO2 Crystal Substrates. Main Parameters Crystal structure Tetragonal, Rutile Unit cell constant a=4.5936Å c=2.9582 Å Density 4.26 (g/cm3) Melting point 1870 ℃ Dielectric constants dη/dT: a: -0.72×10^-6/k, c: -0.42×10^-6/k Linear expansion coefficient 7.14 x 10-6 /℃ along a axis 9.19 x 10-6 /℃ along c axis Hardness 7 (mohs) Polishing Single or double side polished Size 5×5×10mm, 5×10×10mm, 10×10×0.5mm, other [...]
PAM-XIAMEN has 4H SiC crystal for sale, which is for power electronic device and microwave power device. It has been found that there are over 250 polytypes of silicon carbide single crystal, but the most common polytypes are cubic close-packed 3C-SiC and hexagonal close-packed [...]
Transmittance of Glass Wafer Different Glass wafer material has different transmittance. The end user should check their detail application, and then choose corresponding glass wafer material, see below: Transmission Rate of Jgs1 Glass Wafer Transmission Rate of Jgs1 Glass Wafer Transmittance of Glass Wafer Transmission Rate of Jgs2 Glass [...]
Photoluminescence and Raman studies of GaN films grown by MOCVD The photoluminescence (PL) of high quality GaN epitaxial layer grown by MOCVD was investigated for various excitation power and temperatures from 8.3 to 300K. The PL at 8.3 K and with relatively low excitation power [...]
PAM XIAMEN offers 2004nm laser diode wafers. Available Center Wavelengths: 1970 nm – 2051 nm Wavelength Tolerance: +/- 1nm CW Output Power (typical): 3mW (out of fiber) SMSR (typical): >40 dB Optical Linewidth: < 1.5 MHz Temperature Tuning Coefficient (typical): 0.1 nm/°C Current Tuning Coefficient (typical): 12 pm/mA Slope Efficiency (typical): 0.12 [...]
X-ray diffraction analysis of LT-GaAs multilayer structures Multilayer structures of low-temperature-grown GaAs(LT-GaAs) into which ultra-thin layers containing excess As are periodically introduced are grown by molecular beam epitaxy. The concentration of excess As in the ultra-thin layers is determined by the analysis of the intensity [...]
