2″ Silicon Wafer
Resistivity 1-5Ωcm
P type, Boron doped
Orientation (100)
Thickness 300±25μm
SSP
SEMI Prime, 1Flat, Hard cst
For more information, send us email at [email protected] and [email protected]
Thermal oxides on the Ga-face of low defect density bulk gallium nitride (GaN) were controllably produced under varying conditions and subsequently analyzed. The thermal oxidation was performed in a dry oxygen atmosphere at different temperatures and different oxidation times. Each oxide layer was identified [...]
Germanium (Ge) window is provided for infrared (IR) transmission. Ge window is not transparent for visible lingt and UV light while has a wide transmission range in infrared band. Infrared grade germanium single crystal is the basic material for making infrared lenses, infrared window [...]
PAM XIAMEN offers 6″ FZ Silicon Ingot with Diameter 150.7±0.3mmØ Silicon ingot, per SEMI, G 150.7±0.3mmØ FZ p-type Si:B[110]±2.0° Ro > 1,000 Ohmcm Ground Ingot NO Flats NOTE: Oxygen<1E16/cc, Carbon<1E16/cc MCC Lifetime>1,000µs For more information, send us email at [email protected] and [email protected]
PAM-XIAMEN participates in the design and processing of MEMS and compound semiconductor GaAs microwave integrated circuit (GaAs MMIC) devices, and focuses on the research, development, production and service of micro-nano sensors, micro-electromechanical systems (MEMS), micro-nano manufacturing and compound semiconductor GaAs chips. We are a [...]
Silicon Carbide Circuits on the Way Although silicon is the semiconducting material of choice in the majority of applications in electronics, its performance is poor where large currents at high voltages have to be controlled. For about 50 years, scientists have been eyeing silicon carbide [...]
PAM XIAMEN offers 6″ Monocrystalline silicon wafers with insulating oxide 6″ Monocrystalline silicon wafers with insulating oxide Polishing: one-sided for microelectronics Thickness: 675 +/- 20 microns TTV <15 μm, Warping <35 μm P type Orientation <100> The thickness of the insulating oxide layer is 300 nm Resistance of the base plate ≥ 10 [...]
