2″ Silicon Wafer
Resistivity 1-5Ωcm
P type, Boron doped
Orientation (100)
Thickness 300±25μm
SSP
SEMI Prime, 1Flat, Hard cst
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Highlights •AlGaN/GaN HEMT on SiC substrate is presented to improve the electrical operation. •The depletion region of structure is amended using a multiple recessed gate. •A gate structure is proposed to be able to control the thickness of the channel. •RF parameters are considered and are improved. In this [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment Intrinsic Si:- [100-4.0°] ±0.5° 2″ 400 P/E FZ >20,000 SEMI Prime, TTV<5μm Intrinsic Si:- [100] 2″ 400 P/E FZ >20,000 SEMI Prime, TTV<5μm Intrinsic Si:- [100] 2″ 200 P/P FZ >10,000 SEMI Prime Intrinsic Si:- [100] 2″ 350 P/P FZ >10,000 SEMI Test, Wafers with edge chips Intrinsic Si:- [100] 2″ 500 ±10 P/E FZ >10,000 SEMI Prime Intrinsic Si:- [100] 2″ 500 ±10 P/E FZ >10,000 SEMI Prime Intrinsic Si:- [100] 2″ 500 ±10 P/E FZ >10,000 SEMI Prime Intrinsic Si:- [100] 2″ 300 P/E FZ 5,000-10,000 SEMI Prime Intrinsic Si:- [100] 2″ 300 P/E FZ 5,000-10,000 SEMI Prime, in hard cassettes of 2 & 5 wafers Intrinsic Si:- [111] ±0.5° 2″ 330 P/P FZ >20,000 SEMI Intrinsic Si:- [111] ±0.5° 2″ 330 P/P FZ >20,000 SEMI Intrinsic Si:- [111] [...]
GaN-on-Si blue/white LEDs: epitaxy, chip, and package The dream of epitaxially integrating III-nitride semiconductors on large diameter silicon is being fulfilled through the joint R&D efforts of academia and industry, which is driven by the great potential of GaN-on-silicon technology in improving the efficiency yet [...]
Livermore, CA and Tokyo (Marketwire) – Bridgelux Inc., a leading developer and promoter of LED lighting technologies and solutions, and Toshiba Corporation, a world-leading semiconductor manufacturer, today announced that Bridgelux and Toshiba have achieved the industry’s top class 8″ GaN on SiliconLED chip emitting [...]
PAM XIAMEN offers 3″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 3″Øx381μm p- Si:B[111] 0.004-0.008 P/E 12.5±2.5 p- Si:B 2.35 n/p/p+ 3″Øx381μm p- Si:B[111] 0.004-0.008 P/E 140±10 n- Si:P 33.6 n/p/p+ 3″Øx381μm n- Si:As[111-4°] 0.001-0.005 P/E 5.5 n- Si:P 0.31 – 0.33 n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 37.5 n- Si:P 0.6±10% n/n+ 3″Øx525μm n- Si:P[111] 0.001-0.005 P/E 4.5 n- Si:P 1.1 – 1.4 n/n+, Sealed in cassettes of 24 wafers 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 5.5 n- Si:P 1.06±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 11 n- Si:P 17.5±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.7±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 2.1±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.8±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 16±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 13 n- Si:P 1.35±10% n/n+ 3″Øx381μm n- [...]
Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate Highlights • The growth of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate. • The investigation of the effect of HT-AlN thickness on crystalline quality and stress of GaN on SiC. • The semi-insulating characteristic of GaN layer analyzed by PL [...]
