PAM XIAMEN offers 2″CZ Prime Silicon Wafer-3
Silicon wafer
dia 2 inch
thickness 280 um
P type boron doped or N doped
resistivity- 1-10 ohm cm
orientation-100
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 4″ FZ Prime Silicon Wafer-7 4″ FZ Si wafer N type Orientation (100) Thickness 500±15μm Resistitvity>2000Ωcm DSP For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to [...]
Formation of InAs quantum dots on low-temperature GaAs epi-layer InAs self-organized quantum dots (QDs) grown on annealed low-temperature GaAs (LT-GaAs) epi-layers and on normal temperature GaAs buffer layers have been compared by transmission electron microscopy (TEM) and photoluminescence (PL) measurements. TEM evidences that self-organized QDs [...]
PAM XIAMEN offers New substrate. GYSGG (Gd0.63Y2.37Sc2Ga3O12) Substrate (111 ) 10x10x0.5 mm, 1 SP NGG (Nd3Ga5O12) Substrate (111 ) 10x10x0.5 mm, 1 SP YSGG (Y3Sc2Ga3O12) Substrate (111 ) 10x10x0.5 mm, 1 SP Bi-Crystal LSAT Substrate (100) 10x10x0.5 mm, 1sp, 24 Degree SrTiO3 Substrate with [...]
PAM XIAMEN offers 2″ Silicon Oxide Wafer 2″ Silicon Oxide Wafer Diameter (mm): 50mm Grade: Prime Growth: CZ Type/Dopant: any Orientation: 100 Resistivity (Ohm-cm): any Thickness (µm): 500±25μm Tolerance (µm): any Surface Finish: SSP Flats: SEMI-Std. TTV < (µm): any Bow < (µm): any Warp < [...]
PAM XIAMEN offers 3″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 76.2 N Phos CZ -100 1-20 43768 P/P PRIME 76.2 N Phos CZ -100 1-20 40-60 P/P PRIME 76.2 N Phos CZ -100 1-20 80-100 P/P PRIME 76.2 N Phos CZ -100 1-20 140-160 P/P PRIME 76.2 N Phos FZ -100 >3000 300-350 P/P PRIME 76.2 N Phos CZ -100 1-20 300-350 P/P PRIME 76.2 N Phos CZ -100 1-20 300-350 P/E PRIME 76.2 N Phos CZ -100 350-400 P/E/OX PRIME 76.2 N As CZ -100 .001-.005 350-400 P/E PRIME 76.2 N Sb CZ -100 .005-.02 350-400 P/E PRIME 76.2 N Phos FZ -100 >3000 350-400 P/E PRIME 76.2 N Phos CZ -100 1-20 350-400 P/E PRIME 76.2 N Phos CZ -100 1-20 350-400 P/E/DTOx PRIME 76.2 N Phos CZ -100 1-20 350-400 P/E/Ni PRIME 76.2 N Phos CZ -100 1-20 350-400 P/E/WTOx 76.2 N Phos CZ -100 20-50 350-400 P/P PRIME 76.2 N Phos CZ -100 20-50 350-400 P/P PRIME 76.2 N Phos CZ -100 20-50 400-450 P/E PRIME 76.2 N Phos CZ -100 450-500 P/P PRIME 76.2 N Phos CZ -100 500-550 P/E PRIME 76.2 N Phos CZ -100 950-1000 P/P PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
HgCdTe thin films have been deposited on CdZnTe/Si(1 1 1) substrates by pulsed laser deposition (PLD). A Nd:YAG pulsed laser with a wavelength of 1064 nm was used as laser source. The effects of CdZnTe buffer layer thickness which varied with the deposition time in the range from [...]
