PAM XIAMEN offers GaAs (100) Te-doped crystal .
GaAs (100), N type Te doped, 10×10 x 0.35 mm, 1SP
GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te [...]
2019-04-22meta-author
PAM-XIAMEN offers M Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN M-U
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
M plane (1-100) off angle toward A-axis 0 ±0.5°
M plane (1-100) off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-17meta-author
PAM XIAMEN offers TeO2 Tellurium Dioxide Crystals.
Tellurium Dioxide, TeO2 is an excellent ascousto-optic (AO) crystal with high AO figure of merit, birefringence, good optical rotation and slow propagation velocity along [110] direction. The resolution of AO devices made of TeO2 crystals will increase several [...]
2019-03-15meta-author
Overview of Micro-LED History and Current Developments
According to LEDinside’s latest findings, micro-LEDs will enter mass production by 2018. To understand micro-LED technology comprehensively, and tap into its market potential, LEDinside has organized its history, current situation, theory, manufacturing process, and related manufacturers.
History
The history of micro-LEDs [...]
2016-08-22meta-author
When the In composition in the InGaAs material reaches 0.53, and Ga reaches 0.47, InGaAs / InP lattice matched makes it can form a heterojunction. The InGaAs / InP heterojunction structure utilizes the steps of the conduction band and valence band formed by the [...]
PAM XIAMEN offers 4″CZ Epitaxial Prime Silicon Wafer.
4″ Si epi wafer
Growth Method: CZ
100 +/- 0.5 mm diameter silicon
Orientation <111> 4deg off
P Type Boron doped 0.002 – 0.003 ohm cm
Front side polished – Epi ready
thickness 525 +/-25 um [...]
2019-07-05meta-author