(Al,In)GaN laser diodes with optimized ridge structures
We develop (Al, In)GaN ridge waveguide laser diodes in the violet-blue spectral region. Varying the indium content of the InGaN quantum wells, we tailor the emission wavelength of our devices for specific applications in the range from 390 [...]
2013-03-27meta-author
PAM XIAMEN offers CZT and MCT crystal.
CZT and MCT crystal are new semiconductors which enables effective conversion of radiation to electron. The technology will reform radiography and radiation measurement in medical and industrial areas. We both provides the standard substrate , CZT and [...]
2019-04-19meta-author
PAM XIAMEN offers 50.8mm Si wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2179
p-type Si:B
[100]
2″
300
P/E
1–10
SEMI Prime, 2Flats, hard cst
PAM2180
p-type Si:Ga
[100]
2″
350
P/P
1–5
SEMI Prime, 2Flats, hard cst
PAM2181
p-type Si:B
[100]
2″
500
P/E
1–2
SEMI Prime, 2Flats, hard cst
PAM2182
p-type Si:B
[100]
2″
900
P/E/P
1–10
SEMI Prime, 2Flats, hard cst
PAM2183
p-type Si:B
[100]
2″
2000
P/P
1–10
SEMI Prime, 2Flats, Individual cst
PAM2184
p-type Si:B
[100]
2″
2000
P/E
1–10
SEMI Prime, [...]
2019-02-18meta-author
PAM-PA02 is a large size pixel detector based on CZT crystal. They have an extremely high energy resolution and space resolution with a low dose incident of radiation.
1. SPECT, γ-imaging Detector Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
25.4×25.4mm2
Thickness
5.0mm
Pixel size
1.5×1.5mm2
Pixel pitch
1.6mm
Pixel array
16×16
Electrode material
Au
Operation temperature
+30℃~+40℃
Energy range
20KeV~700MeV
Energy resolution(22℃)
Average<6.5%@122KeV(>13% means defective pixel)
Photo-Peak Efficiency(PPE)
Defined [...]
2019-04-24meta-author
PAM XIAMEN offers 6″FZ Prime Silicon Wafer-3
6″ FZ Si wafer, 75pcs
Orientation: (100)±0.5
Type/Dopant: n/phosphorus
Resistivity: 1-5 Ω-cm
Life time : > 1000 μs
Thickness: 400 ± 25 μm
Carbon (atm/cm3): <2.0 x 1016
Oxygen (atm/cm3): < 2 x 1016
Diameter: 150 mm
Primary flat: Semi Std
Secondary flat: not essential
Front and back side Finish: [...]
2020-04-23meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
P
Boron
CZ
-100
1-20
140-160
P/P
PRIME
50.8
P
Boron
FZ
-100
>1000
200-500
P/P
PRIME
50.8
P
Boron
FZ
-100
>3000
225-275
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
225-275
P/P
PRIME
50.8
P
Boron
CZ
-100
.001-.005
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
.005-.02
250-300
P/E
PRIME
50.8
P
Boron
FZ
-100
>3000
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/DTOx
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/Ni
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/OX
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/WTOx
50.8
P
Boron
CZ
-100
.001-.005
275-325
P/E
PRIME
50.8
P
Boron
CZ
-100
450-500
P/P
PRIME
50.8
P
Boron
FZ
-100
4000-10000
475-525
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
500-550
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
950-1000
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
1000-1050
P/E
PRIME
50.8
P
Boron
CZ
-111
1-20
225-275
P/P
PRIME
50.8
P
Boron
CZ
-111
1-20
250-300
P/E
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-02-27meta-author