PAM XIAMEN offers 2″CZ Prime Silicon Wafer-3
Silicon wafer
dia 2 inch
thickness 280 um
P type boron doped or N doped
resistivity- 1-10 ohm cm
orientation-100
For more information, send us email at [email protected] and [email protected]
Silicon wafer
dia 2 inch
thickness 280 um
P type boron doped or N doped
resistivity- 1-10 ohm cm
orientation-100
For more information, send us email at [email protected] and [email protected]
PAM-XIAMEN offers 1550nm laser diode wafer, which is an epitaxial wafer of a diode laser structure emitting around 1550 nm (on InP substrate), and the wafer dimension for laser diode 1550nm can be 2” or 3”. You can fabricate a laser for your application such [...]
PAM XIAMEN offers 4″FZ Silicon Ignot. Silicon ingot, per SEMI, 100.7±0.3mmØ, FZ n-type Si:P[111]±2.0°, Ro=(2,000-4,000)Ohmcm, NO Flats. NOTE: Oxygen<1E16/cc, Carbon<1E16/cc, MCC Lifetime>1,000µs For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material [...]
PAM-H01 series are CZT crystal based hemispherical detectors which have a special structure. They can detect X-ray and middle to high energy γ-ray in a high energy resolution. CZT Asymmetry Detector 1. CZT Hemispherical Detector Specification Material CdZnTe Density 5.8g/cm3 Volume resistance >1010Ω.cm Dimensions 5.5×5.0mm2 10.0×10.0mm2 Thickness 2.75mm 5.0mm Electrode material Au Operation temperature -20℃-+40℃ Energy range 10KeV~3MeV Energy resolution(22℃) <3%@662MeV Peak-compton ratio >3 >5 Storage temperture 10℃~40℃ Storage humidity 20%-80% Remarks Customized available 2. CZT Crystal [...]
PAM XIAMEN offers GaAs(100) Cr-doped crystal. GaAs , Growing Method: VGF(100) Cr- doped, SI-type, 2″ dia x 0.35mm, 2sp GaAs single crystal wafer Growing Method: VGF Orientation: [...]
PAM XIAMEN offers 4″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 100 N Phos CZ -100 1-20 43768 P/P PRIME 100 N Phos CZ -100 1-20 40-60 P/P PRIME 100 N Phos CZ -100 1-20 80-100 P/P PRIME 100 N Phos CZ -100 1-20 180-200 P/P PRIME 100 N Phos CZ -100 300-350 P/P PRIME 100 N Phos CZ -100 1-20 300-350 P/E PRIME 100 N Phos CZ -100 350-400 P/P PRIME 100 N Phos CZ -100 1-3 350-400 P/P PRIME 100 N As CZ -100 .001-.005 375-425 P/P PRIME 100 N Phos CZ -100 1-20 375-425 P/E PRIME 100 N Phos CZ -100 450-500 P/P PRIME 100 N As CZ -100 .001-.005 450-500 P/P PRIME 100 N Sb CZ -100 .005-.02 450-500 P/P PRIME 100 N Phos FZ -100 >3000 450-500 P/P PRIME 100 N As CZ -100 .001-.005 500-550 P/E PRIME 100 N Sb CZ -100 .005-.02 500-550 P/E PRIME 100 N Phos FZ -100 >3000 500-550 P/E PRIME 100 N Phos CZ -100 1-20 500-550 P/E PRIME 100 N Phos CZ -100 1-20 500-550 P/E/DTOx PRIME 100 N Phos CZ -100 1-20 500-550 P/E/Ni PRIME 100 N Phos CZ -100 1-20 500-550 P/E/OX PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
Chamfer is to grind away the sharp edges and corners around the wafer. Its purpose is to make the mechanical strength of the wafer bigger prevent the wafer edge from cracking, to prevent damage caused by thermal stress, and to increase the flatness of [...]