2″CZ Prime Silicon Wafer-3

2″CZ Prime Silicon Wafer-3

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4″ Epitaxial Silicon Wafer

PAM XIAMEN offers 4″ Epitaxial Silicon Wafer   Item Parameter Spec Unit 1 Growth Method CZ   2 Diameter 100+/-0.5 mm 3 Type-Dopant P- Boron   4 Resistivity 0.002 – 0.003  ohm-cm 5 Resistivity Radial Variation <10 % 6 Crystal Orientation <111>  4 +/- 0.5 degree 7 Primary Flat Orientation Semi degree Length Semi mm 8 Secondary Flat Orientation Semi degree Length semi mm 9 Thickness 525 +/- 25 μm 10 TTV ≦10 μm 11 Bow ≦40  μm 12 Warp ≦40  μm 13 Front Surface polished   14 Backside etched — 5000 +/-10% Angstoms SiO2 15 Surface Appearance no Cratches, haze, edge chips, orange peel, defects,contamination — 16 Edge Profile Edge Rounding   17 Particle (>0.3μm) N/A ea/wf 18 — — — 19 Epi Layer 1 N Phos — 20 Resistivity 3.8 – 5.2 ohm cm 21 Thickness 29.0 – 35.0 um   — — — 22 Epi Layer [...]

2021-03-16meta-author
Diced Silicon Wafers

PAM XIAMEN offers Diced Silicon Wafers.Wafer thickness could be customized. PAM XIAMEN and our partners provide researchers with creative silicon wafer and other substrate dicing solutions. Using precision diamond saws we can cut a variety of hard brittle materials. Our Services Include. Small quantity wafer dicing at [...]

2019-02-20meta-author
2″ Silicon Wafer-1

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [110] ±0.5° 2″ 279 P/E FZ >1,000 p-type Si:B [100] 2″ 300 P/E FZ 2,800-3,300 SEMI Prime, TTV<7μm p-type Si:B [100] 2″ 300 P/E FZ 2,800-3,300 SEMI Prime, TTV<7μm p-type Si:B [100] 2″ 300 P/E FZ 2,800-3,300 SEMI Prime, TTV<7μm p-type Si:B [111] ±0.5° 2″ 500 P/P FZ 5,000-6,500 SEMI Test (in unsealed cassette) p-type Si:B [111] ±0.5° 2″ 275 P/E FZ 3,000-5,000 SEMI Prime, Lifetime>2,000μs, in hard cassettes of 5 wafers p-type Si:B [111-7° towards[110]] ±0.5° 2″ 279 P/P FZ >2,000 SEMI Prime p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000-5,000 SEMI, Soft cst p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000-5,000 SEMI TEST (Scratched), Soft cst p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000-5,000 SEMI [...]

2019-03-07meta-author
2″ silicon wafers Thickness:1000 ±25μm

PAM XIAMEN offers 2″ silicon wafers Thickness:1000 ±25μm. 2’’ silicon wafers Ra < 4 nm (100) Thickness1000 ±25μm Doped (no requirement for resistivity and type, resistivity and type will be shown on test report when shipment) 2 sides polished With flat (SEMI STD) For [...]

2019-08-22meta-author
GaN-On-Si Key Patent Analysis

GaN-On-Si Key Patent Analysis   The size of sapphire substrates is increasing to response to the current trend toward the low LED price, but it is actually hard to grow sapphire single crystals to a large size. For this reason, research on adopting silicon that has [...]

2012-12-19meta-author
UV LED wafer

We can provide 2″ UV LED wafer and AlN wafer for medical & scientific applications including photodynamic therapy also benefit from a high power and high flux density LED. 1. Features & Dimensions of UV LED Wafer Growth Technique – MOCVD Substrate Material:Sapphire Substrate (Al2O3) Substrate Conduction: Insulating Substrate [...]

2014-04-14meta-author