PAM XIAMEN offers 2″CZ Prime Silicon Wafer
tem1, 100pcs
Silicon wafer:
i. Diameter: 50.8 mm ± 0.5 mm,
ii. Thickness: 275 μm ±25μm,
iii. Doping: P type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
Grade: Prime
Resistivity: 1 Ohm-cm to 10 Ohm-cm
Surface: single side polished
Flats: SEMI Standard
Surface roughness: ≤ 5Å
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 6″FZ Prime Silicon Wafer-2 6″ Si wafer, Diameter 150mm, FZ Gas Dope, DSP, N(111), resistivity 5000-10,000Ωcm PARAMETER SPECIFICATION GENERAL CHARACTERISTICS 1 Growth Method FZ Gas Dope 2 Crystal Orientation (111) 3 Conductivity Type n 4 Dopant Phosphorus. 5 Nominal Edge Exclusion 6 mm ELECTRICAL CHARACTERISTICS 6 Resistivity 5000 – 10,000 Wcm 7 Life Time >1500 µsec CHEMICAL CHARACTERISTICS 8 Oxygen Concentrations < 2xE16 at/cm3 9 Carbon Concentrations < 2xE16 at/cm3 WAFER PREPARATION CHARACTERISTICS 10 Front Surface Condition Polished, DSP 11 Edge [...]
PAM XIAMEN offers Glass Substrates(ITO Coated Glass / Plastic Substrates and ITO/ZnO coated Sodalime Glass). ITO Coated Glass / Plastic Substrates ITO coated(sodalime) glass has highly electrical conductivity yet with excellent transparence. It has been widely used in flat panel display and solar cells. [...]
PAM XIAMEN offers 3″ Silicon Wafer-19 Si wafer orientation: (100) ± 0.5° Type: n-type Dopant: P Diameter: 76.2 ± 0.3 mm Thickness: 380 ± 25 um Disorientation: 2° to <110> Resistivity: < 0.005 Ohm*cm Single side polished For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm. FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity>30000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, please visit our website: https://www.powerwaywafer.com, [...]
PAM XIAMEN offers Si+SiO2+Ti(TiO2)+Pt (Poly or single crystalline)Thin Film. Si+SiO2 +Ti( or TiO2)+Pt (111) Highly Oriented Polycrystal SiO2+Ti+Pt (111) thin film on Si substrate, 5x5x0.525mm, 1sp, P-type, B-doped, (SiO2=300nm, Ti=10nm, Pt(111)=150nm) SiO2+Ti+Pt(111) thin film on Si substrate ,10x10x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=10nm ,Pt(111)=150nm) SiO2+Ti+Pt(111) thin [...]
Highlights •A recessed structure was used on the GaAs/Si solar cells to reduce the current path. •The associated series resistance was reduced by a recessed structure. •The carrier recombination loss was improved due to pyramid-like recessed structure. In this study, epitaxial layers of GaAs-based solar cells were grown [...]
