2″CZ Prime Silicon Wafer

2″CZ Prime Silicon Wafer

PAM XIAMEN offers 2″CZ Prime Silicon Wafer

tem1, 100pcs
Silicon wafer:
i. Diameter: 50.8 mm ± 0.5 mm,
ii. Thickness: 275 μm ±25μm,
iii. Doping: P type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
Grade: Prime
Resistivity: 1 Ohm-cm to 10 Ohm-cm
Surface: single side polished
Flats: SEMI Standard
Surface roughness: ≤ 5Å


Q: To study desired magnetic properties of our deposited thin magnetic films sometime we anneal their sample (i.e., substrate + thin film) at high temperatures. Hence this temperature sustainability is required. Hence we require that offered fleaxible Si substrates should withstand 1.6K to 700 K which is (-) 271.5 Degree C to 430 Degree C. Please confirm.

A: The silicon wafers we offered are no problem to withstand 271.5 Degree C to 430 Degree C.

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.

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