2″CZ Prime Silicon Wafer

PAM XIAMEN offers 2″CZ Prime Silicon Wafer

tem1, 100pcs
Silicon wafer:
i. Diameter: 50.8 mm ± 0.5 mm,
ii. Thickness: 275 μm ±25μm,
iii. Doping: P type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
Grade: Prime
Resistivity: 1 Ohm-cm to 10 Ohm-cm
Surface: single side polished
Flats: SEMI Standard
Surface roughness: ≤ 5Å

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

2020-03-25

Share this post

Related Posts

Heteroepitaxial Growth of SiC on Si(100) and (111) by Chemical Vapor Deposition Using Trimethylsilane

Heteroepitaxial growth of 3C‐SiC on Si by chemical vapor deposition has been investigated using the precursor trimethylsilane. To optimize the growth process and to obtain high growth rates, we have investigated the effect of temperature and precursor flow rate on on‐axis Si(100) and off‐axis [...]

2020-01-20meta-author
3″ Silicon Wafer-13

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:Sb [111-2.5°] 3″ 300 P/E 0.014-0.018 SEMI Prime n-type Si:Sb [111-3.5°] 3″ 380 P/E 0.014-0.016 SEMI Prime n-type Si:Sb [111-3°] 3″ 300 P/E 0.011-0.016 SEMI Prime n-type Si:Sb [111] ±0.5° 3″ 300 P/P 0.01-0.20 SEMI Prime n-type Si:Sb [111] 3″ 380 P/E 0.008-0.025 SEMI Prime n-type Si:As [111-0.5°] 3″ 380 P/P 0.003-0.005 SEMI Prime n-type Si:As [111] 3″ 380 P/E/P 0.002-0.005 SEMI Prime n-type Si:As [111-2.5°] 3″ 380 P/E 0.002-0.005 SEMI Prime n-type Si:As [111-4°] 3″ 380 P/E 0.002-0.005 SEMI Prime For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material [...]

2019-03-06meta-author
GaInP/InP epi wafer

GaInP/InP epi wafer     We can offer 2″ GaInP/InP epi wafer as follows:   2” GaInP epi layer: thickness:1um, Ga:In=1:1, epi layer:1-3um,   InP substrate:2”size,orientation (100) or (110), n type or semi-insulating, thickness:300-500um, single side polished.   Gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is [...]

2014-11-11meta-author , , ,
Float Zone Silicon Wafers

PAM XIAMEN offers Float Zone Silicon Wafers, they use FZ Silicon substrates instead of  Czochralski grown silicon. Or simply put, Float Zone Si is most ly used low volume applications that require high-efficiency while CZ Silicon is used for high volume, less expensive applications. FZ Si [...]

2019-02-14meta-author
PAM-XIAMEN Offers AlGaInAs epitaxial wafer for Laser diode

PAM-XIAMEN Offers AlGaInAs epitaxial wafer for Laser diode Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of Laser diode epitaxial structure and other related products and services announced the new availability of size 3” is on mass production in 2017. This new product represents a [...]

2018-02-13meta-author
Silicon Ingots -1

Silicon Ingots -1 PAM XIAMEN offers Silicon Ingots. Below is just a short list. Contac us if you need other specs!       All diameters! Note: Material – CZ unless noted Kg in Properties of Silicon Stock Silicon Ingots Material Description 2.7 FZ 6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 Ohmcm, MCC Lifetime>1777μs, NO Flats 1.15 FZ 6″Ø×25mm [...]

2019-02-15meta-author