PAM XIAMEN offers Ce:Lu2SiO5 substrate.
Ce:Lu2SiO5 substrate (001 ) 10x10x0.5 mm, 1sp
Substrate Specifications
Crystal: Ce: Lu2SiO5
Ce dopant 0.175 mol %
Size: 10x10x0.5 mm
Orientation: (001 ) +/-0.5 0
Polish: One side optical polished.
Ce:Lu2SiO5 substrate (001) 10x10x0.5 mm, 2sp [...]
2019-05-08meta-author
Phosphorus-containing III-V compounds are the preferred materials for millimeter-wave and submillimeter-wave devices and circuits, optoelectronic devices, and solar cells. InGaP lattice matched to GaAs has a direct band gap of 1.9eV at room temperature, which is a highly efficient light-emitting material. We are pleased [...]
2017-10-11meta-author
PAM-XIAMEN can offer metallized diamond heat sink for solving the poor bonding force between diamond and the matrix and the early falls of the diamond due to high interface energy with most metals, ceramics, etc. A metallized diamond heat sink compound refers to plating metal on [...]
2021-06-11meta-author
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.
Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20meta-author
PAM XIAMEN offers 2004nm laser diode wafers.
Available Center Wavelengths: 1970 nm – 2051 nm
Wavelength Tolerance: +/- 1nm
CW Output Power (typical): 3mW (out of fiber)
SMSR (typical): >40 dB
Optical Linewidth: < 1.5 MHz
Temperature Tuning Coefficient (typical): 0.1 nm/°C
Current Tuning Coefficient (typical): 12 pm/mA
Slope Efficiency (typical): 0.12 [...]
2019-03-13meta-author
PAM-XIAMEN offers SiC-on-SiC epi wafer for pin-diodes (p-n junction SiC epi wafer) as follows:
SiC-On-SiC Epi Wafer For Pin-Diodes
1. Specifications of SiC Epitaxy on Silicon Carbide Substrate
pin-diodes structure 1: SiC-on-SiC epi-wafer PAM060320-SIC
p+[Al]: 5 µm, gradient doping, Na-Nd = 5*10^18 – 1*10^20 ± 50% cm-3
p[Al]: [...]
2020-08-04meta-author