3″ FZ Silicon Wafer Thickness:229-249μm -2

PAM XIAMEN offers 3″ FZ Silicon Wafer Thickness:229-249μm.

3″ Si FZ
Diameter 76-76.6mm
Thickness 229-249μm
Resistivity 53-60Ωcm
TTV ≤10μm
RRG ≤ 7%
front and back sides acid etched
about 1.5mil is etched from the surfaces in order to remove any surface damage
1.5mil = 1.5*25.4= 38.1μm

1.1 Wafers are to be cut from phosphorus doped N -Type Float Zone refined Silicon Rod.
1.2 Wafer Surface Finish (Front and Back):Acid etched to a bright finish with no pltting or faceting due to preferential etching on silicon crystalline planes.
1.3 Wafer syrface sgakk be iruebted no more than 2° off the 111 crystal plane.
1.4 Wafer must be edge rounded and have a single flat 1.00±0.06 inches wide.
1.5 Resistivity,radial gradient of resistivity and carrier lifertime messurement per applicable ASTM standard.
1.6 Resistivity range is all inclusive of variations due to radial gradient,striations,etc. from the center to within 0.0197 inches (0.5mm) from edge.
1.7 No lineage or other crystal defects permitted.

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

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