PAM XIAMEN offers 3″ Silicon Wafer-18
Si wafer
Orientation: (100) ± 0.5°
Type: n-type
Dopant: P
Diameter: 76.2 ± 0.3 mm
Thickness: 380 ± 25 um
Disorientation: 4° to <110>
Resistivity: < 0.005 Ohm*cm
single side polished
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 4″FZ Silicon Ignot. Silicon ingot, per SEMI, G 4″Ø (Diameter 100.5±0.3mm), FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm, Ground Ingot, NO Flats. Lifetime>1,000us, Ox/Carbon <1E16/cc. For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] [...]
PAM XIAMEN offers SiO2 (single crystal quartz). Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries. Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
PAM XIAMEN offers Gallium Phosphate GaP Crystal and Substrate. Main Parameters Crystal structure Cubic Growth method crystallization process Crystal lattice parameters a=5.642Å Density 2.16（g/cm3） Wave band 0.25~22.00um Index of refraction 1.54427 T 0.9 Nf 0.0127 Surface roughness <30A orientation <111>, <110>, <100> size 10×10×2.0mm, 20*20*2.0mm, other sizes available upon request polished One side or double For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading [...]
PAM XIAMEN offers 2″ Silicon Wafer. Diameter (mm) Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 50.8 N Phos FZ (111) Off 2″ Towards (110) 2k-5k 350-400 P/E PRIME 50.8 N Phos CZ -100 1-20 10-30 P/P PRIME 50.8 N Phos CZ -100 1-20 40-60 P/P PRIME 50.8 N Phos CZ -100 1-20 80-100 P/P PRIME 50.8 N Phos CZ -100 1-20 140-160 P/P PRIME 50.8 N Phos FZ -100 >1000 200-500 P/E PRIME 50.8 N Phos FZ -100 >1000 200-500 P/P PRIME 50.8 N Phos CZ -100 225-275 P/P PRIME 50.8 N Phos FZ -100 >3000 225-275 P/P PRIME 50.8 N As CZ -100 .001-.005 250-300 P/E PRIME 50.8 N Sb CZ -100 .005-.02 250-300 P/P PRIME 50.8 N Phos FZ -100 >3000 250-300 P/E PRIME 50.8 N Phos CZ -100 1-20 250-300 P/E PRIME 50.8 N Phos CZ -100 1-20 250-300 P/E/DTOx PRIME 50.8 N Phos CZ -100 1-20 250-300 P/E/Ni PRIME 50.8 N Phos CZ -100 1-20 250-300 P/E/WTOx 50.8 N Phos FZ -100 2000-5000 275-325 P/P PRIME 50.8 N Phos CZ -100 450-500 P/P PRIME 50.8 N Phos CZ -100 43485 500-550 P/E PRIME 50.8 N Phos CZ -100 1000-1050 P/E PRIME 50.8 N Phos CZ -100 1-20 2900-3100 P/E PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected]m and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal [...]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100-6°] 4″ 525 P/E 1-100 SEMI Prime p-type Si:B [100] 4″ 350 P/E 0.08-0.12 SEMI Prime, TTV<5μm p-type Si:B [100-4°] ±0.5° 4″ 381 P/E 0.01-0.02 SEMI Prime p-type Si:B [100] 4″ 800 P/EP 0.01-0.02 SEMI Prime p-type Si:B [100] 4″ 3100 P/P CZ 0.006-0.009 SEMI Prime, Individual cst p-type Si:B [100-6°] 4″ 525 P/E 0.0042-0.0047 SEMI Prime p-type Si:B [100] 4″ 150 ±15 P/P 0.001-0.005 SEMI Prime, TTV<2μm p-type Si:B [111-3°] 4″ 300 P/E 3-4 SEMI Prime p-type Si:B [111-3°] 4″ 400 P/E 0.015-0.018 SEMI Prime p-type Si:B [111] 4″ 525 P/E 0.005-0.006 SEMI Prime p-type Si:B [111-1.5°] 4″ 525 P/E 0.002-0.004 SEMI Prime p-type Si:B [111] 4″ 300 P/E 0.001-0.005 SEMI Prime n-type Si:P [110] ±0.5° 4″ 525 P/P 20-80 SEMI Prime @ [111] – Secondary 70.5° [...]
PAM XIAMEN offers 12 inch silicon wafers. We have all the grades including: Prime grade 300mm silicon wafers Test grade 300mm silicon wafers Mechanical 300mm silicon wafers Reclaimed 300mm silicon wafers We can deposit the following onto our 300mm silicon wafers including: Thermal oxide, wet and dry on 300mm silicon [...]
