PAM XIAMEN offers 3″ Silicon Wafer-18
Si wafer
Orientation: (100) ± 0.5°
Type: n-type
Dopant: P
Diameter: 76.2 ± 0.3 mm
Thickness: 380 ± 25 um
Disorientation: 4° to <110>
Resistivity: < 0.005 Ohm*cm
single side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Highlights • Two kinds of “BCN” diamond materials with different additives have been synthesized under HPHT. • The “BCN” diamonds synthesized from different additive systems show different morphologies and colors, sizes. • The results of FTIR and XPS spectrum indicate bonding between B, C and N of “BCN” diamonds from [...]
PAM XIAMEN offers Nd YAG Nd Doped Yttrium Aluminium Garnet Laser Crystal. Main Specifications dimensional tolerance： Dia：< +/-0.025 mm ,length: < +/-0.5 mm flatness： λ/8 @633nm Surface fineness： 10/5 flatness： 20 arc sec. verticality： 5 arc min orientation： <111> crystalline direction,< +/-0.5° coating film： AR coating, HR Coating reflect： R<0.2%@1064, HR:R>99.8%@1064,R<5%@808nm, clear aperture： >95% central area wavefront distortion： <7mm diameter : <λ/8 per inch @ 633nm, 7mm diameter : <λ/10per inch @ 633nm Publications related to YAG laser crystals: [1] J. E. Geusic et al., “Laser oscillations in Nd-doped yttrium aluminum, yttrium gallium and gadolinium garnets”, Appl. Phys. Lett. 4 (10), 182 (1964) [2] D. Y. Shen et al., “Highly efficient in-band pumped Er:YAG laser [...]
PAM XIAMEN offers 6″ FZ Silicon Wafer Silicon wafers, per SEMI Prime, P/E 6″Ø×875±25µm, FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm, Warp<60μm, One-side-polished, Particles: ≤10@≥0.3μm, MCL (Na, Al, K, Fe, Ni, Cu, Zn)<5E10/cm²,back-side etched, Tarnish, orange peel, contamination, haze, micro scratch, chips, edge chips, crack, crow feet, pin hole, pits, dent, waviness, smudge&scar on [...]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 4″ 400 P/P 0.001-0.005 SEMI Prime p-type Si:B [100] 4″ 500 P/P 0.001-0.005 SEMI Prime, Wafers with striation marks p-type Si:B [100] 4″ 525 P/P 0.001-0.005 SEMI Prime, TTV<5μm, Bow<15μm, Warp<30μm p-type Si:B [100] 4″ 525 P/E 0.001-0.002 SEMI Prime, TTV<4μm p-type Si:B [100] 4″ 525 P/E 0.001-0.005 SEMI Prime, TTV<5μm p-type Si:B [100] 4″ 525 BROKEN 0.001-0.005 Broken wafer (shattered into many pieces) p-type Si:B [100] 4″ 800 C/C 0.001-0.005 SEMI, With striation marks p-type Si:B [100] 4″ ? P/P SEMI Test p-type Si:B [100] 4″ 375 P/E <0.0015 {0.00091-0.00099} SEMI Prime, TTV<3μm p-type Si:B [111] 4″ 350 P/E 2-3 Prime, NO Flats p-type Si:B [111] 4″ 1000 P/P 1-10 SEMI Prime, Cassettes of 10 [...]
Coulometric determination of arsenic in gallium arsenide crystal wafers The determination of small variations in the stoichiometry of undoped, semi-insulating gallium arsenide can be achieved by using constant current coulometry. Samples taken from a wafer are etched in HF, dissolved in NaOH-peroxide solution, then treated [...]
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-3 Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm, One-side-polished, back-side Alkaline etched, SEMI Flat (one), Sealed in Empak or equivalent cassette, MCC Lifetime>1,000μs. For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., [...]
