3″ Silicon Wafer-18

PAM XIAMEN offers 3″ Silicon Wafer-18

Si wafer
Orientation: (100) ± 0.5°
Type: n-type
Dopant: P
Diameter: 76.2 ± 0.3 mm
Thickness: 380 ± 25 um
Disorientation: 4° to <110>
Resistivity: < 0.005 Ohm*cm
single side polished

For more information, send us email at [email protected] and [email protected]

2020-03-13

4″ Prime EPI Wafer

PAM XIAMEN offers 4″ Prime EPI Wafer. Substrate: 1. Growth Method CZ 2. Diameter100+/-0.5mm 3. Type-Dopant, P- Boron 4. Resistivity 0.002 – 0.003 ohm-cm 5. Resistivity Radial Variation<10 % 6. Crystal Orientation<111> 4+/- 0.5degree 7. Primary Flat: Orientation Semi degree, Length Semi mm 8. [...]

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Single-emitter LD Chip 880nm @8W

PAM XIAMEN offers Single-emitter LD Chip 880nm @8W. Brand: PAM-XIAMEN Wavelength: 880nm Stripe width: 150um Output Power: 8W Cavity Length:2mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]

2019-05-09meta-author

Positive LED Wafer Based on GaAs Substrate

GaAs-based AlGaInP red LED epi-wafer is a common visible light LED material that has been widely developed in recent years. AlGaInP quaternary red LED has many advantages such as strong current bearing capacity, high luminous efficiency and high temperature resistance. It has an irreplaceable [...]

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Development of a gate metal etch process for gallium arsenide wafers

Development of a gate metal etch process for gallium arsenide wafers The reactive ion etching of TiWN, which is used as a gate metal on gallium-arsenide device wafers, was studied in a parallel-plate, single-wafer plasma reactor operating at a frequency of 13.56 MHz. We discuss [...]

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YSGG single crystal

PAM XIAMEN offers YSGG single crystal. PAM XIAMEN is developing a series of doped GGG single crystal for nest generation Magneto-optical device. Composition GGG YSGG S-GGG（CaMgZr：GGG） NGG GYSGG GSGG (Cubic) Gd3Ga5O12 Y3Sc2Ga3O5 Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12 Nd3Ga5O12 Gd0.63Y2.37Sc2Ga3O12 Gd3Sc2Ga3O12 Lattice constant 12.376 Å 12.426 Å , 12.480 Å 12.505Å 12.507 Å , 12.554 Å , Diffraction（2θ） 51º7′ 50º44′ 50º43′ 50º41′ 50º40′ 50º22′ Melting Point ~1800 oC ~1877℃ ~1730 oC ~1550 oC ~1730 oC ~1730 oC For more information, please visit our website: https://www.powerwaywafer.com, send us email at [...]

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LD Bare Bar for [email protected] 4mm

PAM XIAMEN offers LD Bare Bar for [email protected] 4mm. Brand: PAM-XIAMEN Wavelength: 976nm Filling Factor: 10% Output Power: 35W Cavity Length:4mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., [...]

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[email protected] [email protected]

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PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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3″ Silicon Wafer-18

3″ Silicon Wafer-18

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