PAM XIAMEN offers 3″ Silicon Wafer-18
Si wafer
Orientation: (100) ± 0.5°
Type: n-type
Dopant: P
Diameter: 76.2 ± 0.3 mm
Thickness: 380 ± 25 um
Disorientation: 4° to <110>
Resistivity: < 0.005 Ohm*cm
single side polished
For more information, send us email at [email protected] and [email protected]
VCSEL Market Overview At present, the world’s major designers include Finsar, Lumentum, Princeton Optronics, Heptagon, IIVI and other companies, which are at the forefront of R&D roles on the mobile VCSEL. III-V EPI epitaxial wafers are supplied by companies such as IQE, PAM-XIAMEN, VPEC and Landmark [...]
PAM XIAMEN offers single crystal undoped or Ga-doped ZnO wafer substrate, which is grown by hydrothermal method under high pressure.There are two structures mainly in ZnO wafer: Hexagonal wurtzite and cubic zinc blende, what we offered is Hexagonal wurtzite. 1.Properties of ZnO Wafer: 1.1 General Properties [...]
Top 10 Publication in in Microelectronics & Electronic Packaging by Citation Post: PAM-XIAMEN, date: Jan 13,2020 PAM-XIAMEN has compiled top 10 the ranking data and the publication name in Microelectronics & Electronic Packaging by citation in impact factor(h5-index and h5 median, according to google scholar) PAM-XIAMEN is [...]
PAM XIAMEN offers 60+1mm FZ Si Ingot -6 FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° 10,000Ωcm>Resistivity>3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 4″ silicon ignot. Silicon ingot, per SEMI, G 100.7±0.3mmØ, p-type Si:B[100]±2.0°, Ro=(0.001-0.003)Ohmcm, Ground Ingot, NO Flats, NOTE: visual rings of dopant on front and back side ARE NOT allowed For more information, please visit our website: https://www.powerwaywafer.com, send us email at [...]
An important dispersion in the Rsheet measurement of AlGaN/GaN wafers was found on different samples, with or without SiN passivation. The dispersion is due to a drift of the Rsheet appearing when the sample is placed in the dark. This drift is different for each sample [...]
