PAM XIAMEN offers 3″ Silicon Wafer-18
Si wafer
Orientation: (100) ± 0.5°
Type: n-type
Dopant: P
Diameter: 76.2 ± 0.3 mm
Thickness: 380 ± 25 um
Disorientation: 4° to <110>
Resistivity: < 0.005 Ohm*cm
single side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers Diamond on Silicon wafer . Diamond on Oxide (DOI) Wafer, 4″, 2 um Thick, 10 nm Ra Diamond on Silicon Wafer, 4″, 2 um Thick, 10 nm Ra Electric Conductive Diamond on Insulator Wafer, 4″ , 2 um Thick, 10 nm [...]
PAM XIAMEN offers 1″Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity. Item Dia Type Dopant Orien Res (Ohm-cm) Thick (um) Polish Description PAM2266 25.4mm P B <111> >1000 20000um DSP FZ PAM2267 25.4mm P B <100> ANY 400um SSP Thickness is: 400+/-100um. PAM2268 25.4mm ANY <100> 500um SSP Wafers have particles. Wafers sold “As-Is”. PAM2269 25.4mm Undoped Undoped <111> >2000 280um SSP Intrinsic FZ PAM2270 25.4mm Undoped Undoped <100> >5000 73.5um DSP FZ, Float Zone PAM2271 25.4mm P B <100> .01-.05 500um DSP NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2271 p-type Si:B [100] 1″ 280um P/E 0-100 ohm-cm SEMI, 1Flat, Soft cst PAM2272 Intrinsic Si:- [111] 1″ 280um P/E FZ [...]
(11-22) Plane Si-GaN Freestanding GaN Substrate PAM-XIAMEN offers (11-22) Plane Si-GaN Freestanding GaN Substrate Item PAM-FS-GAN(11-22)- SI Dimension 5 x 10 mm2 Thickness 380+/-50um Orientation (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° Conduction Type Semi-Insulating Resistivity (300K) > 106 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
Optical characterization of InAs film grown on SnO2 substrate by the electrodeposition technique Indium arsenide films have been grown by an electrodeposition process at low temperature on a tin oxide (SnO2) substrate. X-ray diffraction studies showed that the as-grown films are poorly crystallized and heat [...]
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment Si 3″ P/P SEMI TEST (Unsealed)t Si 3″ P/P SEMI TEST (Unsealed)t n-type Si:P [100] ±0.1° 3″ 380 P/E FZ >5,000 SEMI Test, Bad Lasermark on back. To use with chuck light polish needed on back n-type Si:P [100] 3″ 381 P/P FZ 100-500 SEMI Prime n-type Si:P [111] 3″ 300 P/E FZ 61-95 Prime, NO Flatst Intrinsic Si:- [100] 3″ 300 P/P FZ >20,000 Prime, NO Flats, Individual cst Intrinsic Si:- [111] ±0.5° 3″ 1975 P/P FZ >20,000 Prime, NO Flats, Individual cst p-type Si:B [110] 3″ 380 P/E 1-10 1 F @ <1,-1,0> p-type Si:B [100] 3″ 380 P/P 80-170 SEMI Prime p-type Si:B [100] 3″ 300 P/P 30-35 SEMI Prime p-type Si:B [100] 3″ 200 P/E 10-20 SEMI [...]
InGaAs Structure Wafer Indium gallium arsenide (InGaAs), also called gallium indium arsenide, is a common name for a family of chemical compounds of three chemical elements, indium, gallium, and arsenic. Indium and gallium are both boron group elements, often called “group III”, while arsenic is a pnictogen or [...]
