PAM XIAMEN offers 3″ Silicon Wafer-20
Si wafer
Orientation: (111) ± 0.5°
Type: n-type
Dopant: P
Diameter: 76.2 ± 0.3 mm
Thickness: 380 ± 25 um
Disorientation: 2° to <11-2>
Resistivity: < 0.003 Ohm*cm
Single side polished
C Phos > E19 atom/cm3
Oi < 1E18 atom/cm3
Cs < 4E16 atom/cm3
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] 2″ 300 P/P FZ >150 SEMI Prime n-type Si:P [111] 2″ 500 P/P FZ 130-150 SEMI Prime n-type Si:P [111] 2″ 300 P/P FZ 125-210 SEMI Prime n-type Si:P [111] 2″ 380 P/E FZ 100-300 SEMI Prime n-type Si:P [111] 2″ 450 P/P FZ 100-230 Prime, NO Flats n-type Si:P [111] ±0.5° 2″ 280 P/E FZ NTD 80-100 SEMI Prime, in hard cst {as ingot to process} n-type Si:P [111] 2″ 300 P/P FZ 70-95 SEMI Prime n-type Si:P [111-1°] 2″ 300 P/E FZ 69-77 SEMI Prime n-type Si:P [111] 2″ 300 P/P FZ >60 SEMI Prime n-type Si:P [111] 2″ 300 P/E FZ 60-90 SEMI Prime n-type Si:P [111] ±0.5° 2″ 280 P/E FZ NTD 55-75 SEMI Prime, in hard cst {as ingot [...]
We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate–drain region of the proposed [...]
In this work we study the peculiar role of gallium and nitrogen atoms in the growth of InGaN by Plasma Assisted Molecular Beam Epitaxy (PAMBE). We investigate growth of InGaN layers on vicinal GaN (0001) substrates. Indium incorporation as a function of gallium and nitrogen [...]
Product Specifications PAM XIAMEN offers Freestanding GaN Substrate 2″GaN Free-standing Substrate Item PAM-FS-GaN50-N PAM-FS-GaN50-SI Conduction Type N-type Semi-insulating Size 2″(50.8)+/-1mm Thickness 260+/-20um Orientation C-axis(0001)+/-0.5° Primary Flat Location (1-100)+/-0.5° Primary Flat Length 16+/-1mm Secondary Flat Location (11-20)+/-3° Secondary Flat Length 8+/-1mm Resistivity(300K) <0.5Ω·cm >10^6Ω·cm Dislocation Density <5×10^6cm-2 Marco Defect Density A grade<=2cm-2 B grade>2cm-2 TTV <=15um BOW <=20um Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished Back Surface:1.Fine ground 2.Rough grinded ≥ 90 % Usable Area 1.5″GaN Free-standing Substrate Item PAM-FS-GaN50-N PAM-FS-GaN50-SI Conduction Type N-type Semi-insulating Size 1.5″(38.1)+/-0.5mm Thickness 260+/-20um Orientation C-axis(0001)+/-0.5° Primary Flat Location (1-100)+/-0.5° Primary Flat Length 12+/-1mm Secondary Flat Location (11-20)+/-3° Secondary Flat Length 6+/-1mm Resistivity(300K) <0.5Ω·cm >10^6Ω·cm Dislocation [...]
Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate We investigated that the surface morphology of GaN epilayers was significantly affected by the surface tilt orientation of GaN substrate. Surface morphologies of GaN epilayers on GaN substrates show three types: mirror, wavy, [...]
