PAM XIAMEN offers 3″ Silicon Wafer-20
Si wafer
Orientation: (111) ± 0.5°
Type: n-type
Dopant: P
Diameter: 76.2 ± 0.3 mm
Thickness: 380 ± 25 um
Disorientation: 2° to <11-2>
Resistivity: < 0.003 Ohm*cm
Single side polished
C Phos > E19 atom/cm3
Oi < 1E18 atom/cm3
Cs < 4E16 atom/cm3
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 150-μm-gapped THz photoconductive antenna. The types of terahertz photoconductive antennas prepared includes diope antenna,strip line antenna, bow-tie antenna and antenna array with different parameters. The antenna gaps are from 2 μm to 1 mm, and we also can make the antennas designed [...]
PAM XIAMEN offers GaP Substrate (100) . GaP (100) undoped GaP Wafer, undoped (100) 10x10x0.5 mm, 1sp GaP Wafer, undoped (100) 10x10x0.5 mm, 2sp GaP wafer undoped (100) 2″ diaX 0.45mm 1sp, R: 1.5×10^14 ohm.cm, Semi-Insulating GaP wafer undoped (100) 2″ diaX 0.45mm 1sp,R: [...]
This study simulates thermal conductivity via a carrier scattering mechanism and the related parameters are obtained based on first principles for intrinsic and doped silicon carbide (SiC) over a temperature range of 300–1450 K. The theoretical analysis results show that the thermal conductivity decreases with [...]
GaN thin films were grown on ZnO/c-Al2O3 with excellent uniformity over 2 in. diameter wafers using a low temperature/pressure MOVPE process with N2 as a carrier and dimethylhydrazine as an N source. 5 mm×5 mm sections of similar GaN layers were direct-fusion-bonded onto soda lime glass substrates [...]
PAM-XIAMEN offers CZT Preamplifier. PAMMA-01A is a single channel CZT preamplifier. It featured low noise, high gain and charge sensitivity. Signals of semiconductor detectors and other detectors (scintillator, gas, etc.) could be readout by it. Charge sensitive pre-amplifier can be used to test the energy [...]
GaN(Gallium nitride), which is a compound semiconductor,it is a hard, high melting point materials, the melting point of about 1700 ° C, GaN is a high degree of ionizationof III-Vcompound (0.5 or 0.43). At atmospheric pressure, the GaN crystal is generally hexagonal wurtzite structure. In a cell four atoms, the atomic volume is about halfthat of the GaAs. GaN is Non-Toxic. Basic Parameters for Wurtzite crystal structure at 300K: Breakdown field ~5 x 106 V cm-1 Mobility electrons =< 1000 cm2 V-1 s-1 Mobility holes =< 200 cm2 V-1 s-1 Diffusion coefficient [...]
