PAM XIAMEN offers 3″ Silicon Wafer-20
Si wafer
Orientation: (111) ± 0.5°
Type: n-type
Dopant: P
Diameter: 76.2 ± 0.3 mm
Thickness: 380 ± 25 um
Disorientation: 2° to <11-2>
Resistivity: < 0.003 Ohm*cm
Single side polished
C Phos > E19 atom/cm3
Oi < 1E18 atom/cm3
Cs < 4E16 atom/cm3
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
SPECT, γ-imaging Detector PAM-PA02 is a large size pixel detector based on CZT crystal. They have an extremely high energy resolution and space resolution with a low dose incident of radiation. Specification Material CdZnTe Density 5.8g/cm3 Volume resistance >1010Ω.cm Dimensions 25.4×25.4mm2 Thickness 5.0mm Pixel size 1.5×1.5mm2 Pixel center-to-center space 1.6mm Pixel array 16×16 Electrode material Au Operation temperature -20℃-+40℃ Energy range 20KeV!~700MeV Energy resolution(22℃) Average<6%@122KeV (>13% means defective pixel) Photo-Peak Efficiency(PPE) Average>40% Defined [...]
PAM XIAMEN offers 3″ Silicon Wafer-14 3″ Si wafer(32849), R≥200Ωcm 1. Diameter: 76.2 ± 0.1mm 2. The type of alloying: N-type/ phosphorus .3. Orientation (111) ±0.5º 4. Disorientation 4°±0.5º to <110> axis direction 5. Resistivity: ≥200Ωcm 6. Primary surface: semi std 7. Secondary surface: none 8. Thickness: 380±25μm 9. Overall thickness variation on the plate [...]
PAM XIAMEN offers LiF Lithium Fluoride Crystal. LiF crystal has excellent VUV region transmittance. It is used for windows, prisms, and lenses in the visible and infrared in 0.104 μm – 7 μm. LiF crystal is sensitive to thermal shock and would be attacked by [...]
PAM XIAMEN offers TiO2(Anatase) substrate. TiO2 Anatase (001) 5x5x0.5mm, 1 SP” TiO2 Anatase (100) 5x5x0.5mm, 1 SP TiO2 Anatase (101) 5x5x0.5mm, 1 SP TiO2 Anatase (103) 5x5x0.5mm, 1 SP TiO2 Anatase (110) 5x5x0.5mm, 1 SP For more information, please visit our website: https://www.powerwaywafer.com, send [...]
Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate We investigated that the surface morphology of GaN epilayers was significantly affected by the surface tilt orientation of GaN substrate. Surface morphologies of GaN epilayers on GaN substrates show three types: mirror, wavy, [...]
PAM XIAMEN offers 6″FZ Prime Silicon Wafer-1 6″ Si wafer, Diameter 150mm, FZ Gas Dope, SSP, N(100), resistivity 2000-7000Ωcm PARAMETER SPECIFICATION GENERAL CHARACTERISTICS 1 Growth Method FZ Gas Dope 2 Crystal Orientation (100) 3 Conductivity Type n 4 Dopant Phosphorus 5 Nominal Edge Exclusion 6 mm ELECTRICAL CHARACTERISTICS 6 Resistivity 2000 – 7000 Ωcm 7 Life Time >1500 µsec CHEMICAL CHARACTERISTICS 8 Oxygen Concentrations < 2xE16 at/cm3 9 Carbon Concentrations < 2xE16 at/cm3 WAFER PREPARATION CHARACTERISTICS 10 Front Surface Condition Polished, [...]
