3″Prime Silicon Wafer Thickness 375±25μm

3″Prime Silicon Wafer Thickness 375±25μm

PAM XIAMEN offers 3″Prime Silicon Wafer Thickness 375±25μm.

3″ Si wafer
Diameter: 76.2 +/- 0,1 mm
Thickness: 375±25μm
Orientation: <111>
Dopant: p-type/Boron
Front side polished
Back side: frosted
SEMI standard

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

Share this post