3″Prime Silicon Wafer Thickness 375um-2

PAM XIAMEN offers 3″Prime Silicon Wafer Thickness 375um.

3″ Si wafer
Diameter: 76.2 +/- 0,1 mm
Thickness: 375±25μm
Orientation: <111>
Dopant: p-type/Boron
Resistivity<0.005Ωcm
Front side polished
Back side: frosted
SEMI standard

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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2019-07-04

3″ Silicon Wafer-7

PAM XIAMEN offers 3″ Silicon Wafer.Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Commentn-type Si:P [100] 3″ 1500 P/E 5-7 SEMI Primen-type Si:P [100] 3″ 350 P/P 1-5 SEMI Primen-type Si:P [100] 3″ 350 P/P 1-25 SEMI Prime, TTV<1μm, Empak cstn-type Si:P [100] ±1° 3″ 500 P/P 1-100 SEMI Prime, TTV<2μm, Empak cstn-type Si:P [100-4°] ±0.5° 3″ 500 P/E 1-20 Primen-type Si:P [100] 3″ 650 P/P 1-10 Prime, TTV<2μmn-type Si:P [100] 3″ 1000 P/P 1-5 SEMI Prime, hard cstn-type Si:P [100] 3″ 1000 P/E 1-20 SEMI Primen-type Si:P [100] 3″ 6000 P/E 1-20 SEMI Prime, Individual cstn-type Si:Sb [100] 3″ 300 P/E 0.02-0.04 SEMI Prime, in hard cassettes of 2 wafersn-type Si:Sb [100] 3″ 381 P/E 0.008-0.020 SEMI Primen-type Si:As [100] 3″ 380 P/EOx 0.001-0.005 SEMI Prime, LTO Back-side seal [...]

2019-03-06meta-author

(100) Oriented Silicon Wafers-3

PAM XIAMEN offers (100) orientation Silicon Substrates. Below is just a small selection. Let us know if you can use or if we can quote you on another spec.Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm CommentPAM2885 p-type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, in Empak cst, Carbon content (9.8-14.1)E16/cc per ASTM F1319, Oxygen content 6.8E17/cc per ASTM [...]

2019-02-22meta-author

FE SRTIO3 IRON DOPED STRONTIUM TITANATE CRYSTAL SUBSTRATES FE CONCENTRATION 0.05 WT%

PAM XIAMEN offers Fe SrTiO3 Iron Doped Strontium Titanate Crystal Substrates. Single crystal SrTiO3 doped with 0.05 wt% Fe Specifications: Crystal Structure:Cubic Growth Method:Vernuil Method Lattice Parameter:a=3.905Å Fe Doping Concentrations:0.05% Melting Point:2080C Density:5.122 g/ccm Hardness:6-6.5 Mohs Thermal expansion:10.3 x 10^-6/K Dielectric Constant:5.2 Dielectric Loss: ~5×10^-4（300K） ~3×10^-4（77K） Sizes Available:10×3m、10×5m、10×10mm、15×15mm、20×15mm can be customized upon request Typical thickness:0.5mm or 1.0mm Orientations:<100>、<110>、<111> Miscut:0.5 degree Surface Polishing:single or double [...]

2019-03-14meta-author

2″ Silicon Wafer-15

PAM XIAMEN offers 2″ Silicon Wafer.Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Commentn-type Si:P [111] 2″ 330 P/E 3-7 SEMI Primen-type Si:P [111] 2″ 275 P/P 2.5-3.5 SEMI Primen-type Si:P [111] 2″ 5000 P/E 2.0-3.1 Prime, NO Flats, Individual cstn-type Si:P [111] 2″ 5000 P/E 2-3 Prime, NO Flats, Individual cstn-type Si:P [111-8°] 2″ 280 P/E 1.3-1.8 SEMI Prime,n-type Si:P [111-3.5°] 2″ 280 P/E 1-30 SEMI Prime,n-type Si:P [111-2.5°] 2″ 500 C/C 1-20 SEMI Primen-type Si:P [111] 2″ 7500 P/E 1-10 SEMI Prime, , Individual cstn-type Si:Sb [111-3°] 2″ 300 P/E ~0.02 SEMI Primen-type Si:Sb [111-1° towards[112]] 2″ 500 P/E 0.017-0.026 SEMI Prime,n-type Si:Sb [111-2°] 2″ 200 P/E ~0.01 SEMI Prime,n-type Si:Sb [111] 2″ 280 P/E 0.01-0.02 SEMI Prime,n-type Si:Sb [111-2°] 2″ 280 P/E 0.008-0.020 SEMI Prime,n-type Si:As [111] 2″ 300 P/E 0.0030-0.0034 SEMI Prime,n-type Si:As [111] 2″ 300 P/E 0.001-0.005 SEMI Prime,n-type Si:As [111-4°] 2″ 350 P/E 0.001-0.005 SEMI [...]

2019-03-07meta-author

Impact of substrate off-angle on the m-plane GaN Schottky diodes

We investigated the effects of the substrate off-angle on the m-plane GaN Schottky diodes. GaN epitaxial layers were grown by metal–organic chemical vapor deposition on m-plane GaN substrates having an off-angle of 0.1, 1.1, 1.7, or 5.1° toward . The surface of the GaN epitaxial layers on [...]

2019-12-16meta-author

(20-2-1) Plane N-GaN Freestanding GaN Substrate

(20-2-1) Plane N-GaN Freestanding GaN Substrate PAM-XIAMEN offers (20-2-1) Plane N-GaN Freestanding GaN SubstrateItem PAM-FS-GAN(20-2-1)-NDimension 5 x 10 mm2Thickness 380+/-50umOrientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°Conduction Type N-typeResistivity (300K) < 0.05 Ω·cmTTV ≤ 10 µmBOW BOW ≤ 10 µmSurface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished.Dislocation Density ≤5 x 106 cm-2Macro Defect Density 0 cm-2Useable Area > 90% (edge exclusion)Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]ail.com

2020-09-02meta-author

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[email protected] [email protected]

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A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More
CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
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PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

3″Prime Silicon Wafer Thickness 375um-2

3″Prime Silicon Wafer Thickness 375um-2

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