3″Prime Silicon Wafer Thickness 375um-2

  • Home
  • News
  • 3″Prime Silicon Wafer Thickness 375um-2

PAM XIAMEN offers 3″Prime Silicon Wafer Thickness 375um.

3″ Si wafer
Diameter: 76.2 +/- 0,1 mm
Thickness: 375±25μm
Orientation: <111>
Dopant: p-type/Boron
Resistivity<0.005Ωcm
Front side polished
Back side: frosted
SEMI standard

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

2019-07-04

Share this post

Related Posts

SiC Film（3C) on Si wafer

PAM XIAMEN offers SiC Epi Film (3C) on Silicon Wafer The only pure cubic polytype, 3C-SiC, has many advantages for MOS device applications over the other polytypes due to the smaller band gap. In addition, the electron Hall mobility is isotropic and higher compared [...]

2019-04-28meta-author
Single-emitter LD Chip 905nm @25W

PAM XIAMEN offers Single-emitter LD Chip 905nm @25W. Brand: PAM-XIAMEN Wavelength: 905nm Stripe width: 84um Output Power: 25W Cavity Length:0.75mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]

2019-05-09meta-author
Single-emitter LD Chip 808nm @8W

PAM XIAMEN offers Single-emitter LD Chip 808nm @8W. Brand: PAM-XIAMEN Wavelength: 808nm Stripe width: 350um Output Power: 8W Cavity Length:2.5mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]

2019-05-09meta-author
LASRALO4 STRONTIUM LANTHANUM ALUMINATE CRYSTAL SUBSTRATES

PAM XIAMEN offers LaSrAlO4 Strontium Lanthanum Aluminate Crystal Substrates.                                            Main Parameters Crystal structure M4 Growth method Czochralski method Unit cell constant a=3.756Å   c=12.63 Å Melt point（℃） 1650 Density 5.92（g/cm3） Hardness 6-6.5（mohs） Dielectric constants ε=16.8 Size 10×3，10×5，10×10，15×15，20×15，20×20 Ф15, Ф20，Ф1″，Ф2″, Ф2.6″ Thickness 0.5mm, 1.0mm Polishing Single or [...]

2019-03-13meta-author
Ceramic Substrate-6

PAM XIAMEN offers Carbon Substrate & Foam. Graphene film on Ni/SiO2/Si Applications: Graphene electronics Conductive coatings Aerospace industry Support for metalic catalysts Microactuators MEMS and NEMS Chemical and bio sensors Multifunctional Materials Based on Graphene Graphene Research Graphene film on Ni/SiO2/Si 100mm dia Highly Oriented [...]

2019-04-18meta-author
AlGaN Template on Sapphire

PAM XIAMEN offers AlGaN Template on Sapphire. Al(0.1)Ga(0.9)N Epitaxial Template on Sapphire (C plane), N- type, , 10x10x0.5mmAl(0.1)Ga(0.9)N thickness:200nm+/- 20nm, Production Grade Al(0.1)Ga(0.9)N Epitaxial Template on Sapphire (C plane), N- type, , 2″diameter,Al(0.1)Ga(0.9)N thickness:200nm+/- 20nm, Production Grade Al(0.1)Ga(0.9)N Epitaxial Template on Sapphire (C plane), [...]

2019-04-26meta-author