High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy
A low-dislocation-density thick GaN layer was successfully grown using selective-area HVPE growth combined with epitaxial lateral overgrowth. The InGaN MQWsfabricated on this thick GaN layer showed superior optical properties compared with that on [...]
2013-05-02meta-author
The results of GaN epitaxial crystal growth on 4° off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy (THVPE) with high-speed wafer rotation and the properties of the obtained material are briefly described in this paper. GaN epitaxial layers were grown [...]
2019-10-18meta-author
PAM XIAMEN offers 4″ CZ Prime Silicon Wafer.
4″ epi CZ P-type (100)±0.5°
Thickness 525±15μm
Resistivity 0.015±0.005Ωcm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a [...]
2019-06-28meta-author
PAM-XIAMEN can offer EFG grown Gallium Oxide (chemical formula: Ga2O3) wafer. Currently, the third-generation semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) have received widespread attention. High hopes are placed on the application of SiC and GaN in the high power, high temperature, high pressure occasions(like new energy [...]
2021-04-19meta-author
Single crystal germanium wafer with orientation (110) miscut toward <111> with 4 deg. or 12 deg. is provided without dopant. Due to the similar chemical properties with silicon, single crystal germanium has similar applications. While hall effect germanium wafer has higher sensitivity to gamma [...]
2021-10-25meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111] ±0.5°
3″
415 ±15
E/E
FZ 2,000-5,000
SEMI Prime, Lifetime>1,500μs
n-type Si:P
[111] ±1°
3″
508
E/E
FZ 182-196
SEMI Test, TTV<3μm
Intrinsic Si:-
[100]
3″
300
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
300
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Test, unpolished side has stain
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
500
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
500
P/P
FZ >20,000
SEMI Prime, Front Side Prime, back side Test
Intrinsic Si:-
[100]
3″
650
P/P
FZ >10,000
SEMI Prime, with LM, TTV<2μm
Intrinsic Si:-
[100]
3″
700
P/P
FZ >10,000
Test, scratrches and stains. [...]
2019-03-06meta-author