3-1. Large Point Defects
Defects which exhibit a clear shape to the unassisted eye and are > 50 microns across. These features include spikes, adherent particles, chips and craters. Large point defects less than 3 mm apart count as one defect.
2-36.Reclaim Grade Reclaim Grade:A lower quality wafer that has been used in manufacturing and then reclaimed , etched or polished, and then used a second time in manufacturing.
5-4-4-2 SiC Epitaxial Growth Polytype Control Homoepitaxial growth, whereby the polytype of the SiC epilayer matches the polytype of the SiC substrate, is accomplished by “step-controlled” epitaxy . Step-controlled epitaxy is based upon growing epilayers on an SiC wafer polished at an angle (called the [...]
2-7.Primary Flat Orientation The at of the longest length on the wafer, oriented such that the chord is parallel with a specied low index crystal plane. Measured on one wafer per ingot using Laue back-reection technique with manual angle measurement.
2-37.Test Grade Test Grade: A silicon carbide wafer of lower quality than Prime, and used primarily for testing processes. SEMI indicates the bulk, surface, and physical properties required to label silicon carbide wafers as “Test Wafers”.
2-8.Secondary Flat Orientation A at of shorter length than the primary orientation at,whose position with respect to the primary orientation at identies the face of the wafer.
3-5. Backside Cleanliness Veri ed by inspecting for a uniform color to the wafer backside. Note there is a darker region near the center of some higher doped wafers. Backside cleanliness speci ed as percent area clean.
